FDMS7560S N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS7560S is an N-Channel MOSFET manufactured by onsemi, rated for 25V drain-to-source voltage with continuous drain current of 30A at Ta and 49A at Tc. This device is housed in an 8-PQFN (5x6) surface mount package and belongs to the PowerTrench® and SyncFET™ series. The FDMS7560S is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance.

Substiute Parts

FDMS7560S

onsemiIn Stock: 1314FDMS7560S Datasheet

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BSC014NE2LSIATMA1

Infineon TechnologiesIn Stock: 2542BSC014NE2LSIATMA1 Datasheet

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CSD16401Q5

Texas InstrumentsIn Stock: 19852CSD16401Q5 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDMS7560S is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 25V
• Continuous Drain Current: Must meet or exceed 30A at Ta and 49A at Tc
• On-State Resistance (Rds On): Must be equal to or lower than 1.45 mOhm at specified conditions
• Gate Charge (Qg): Lower values indicate improved switching performance
• Input Capacitance (Ciss): Lower values reduce gate drive requirements
• Operating Temperature Range: Must encompass -55°C to 150°C
• Vgs (Max): Must accommodate ±20V gate voltage

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package Form Factor: 8-pin power package (8-PQFN, 8-TDSON, or 8-VSON variants acceptable)
• Compliance: ROHS3 Compliant, MSL 1 rating

The substitute parts BSC014NE2LSIATMA1 and CSD16401Q5 meet these criteria with equal or superior electrical performance and compatible surface mount packaging.

Parameter Comparison

Engineering Selection Recommendations

BSC014NE2LSIATMA1 (Infineon Technologies OptiMOS™)

This substitute provides superior electrical performance with lower on-state resistance (1.4 mOhm) and significantly reduced gate charge (39 nC), resulting in improved switching efficiency and reduced thermal dissipation. The device supports higher continuous drain current at Tc (100A versus 49A), providing design margin for thermal management. Active product status ensures long-term availability and supply chain stability. ROHS3 compliance and MSL 1 rating maintain environmental and manufacturing compatibility. Package form factor (PG-TDSON-8-7) differs from the original but maintains 8-pin surface mount configuration with equivalent thermal performance.

CSD16401Q5 (Texas Instruments NexFET™)

This substitute delivers the highest continuous drain current at Tc (100A) and lowest gate charge (29 nC at 4.5V), enabling superior switching performance and reduced power dissipation. On-state resistance (1.6 mOhm at 40A) remains within acceptable range for most applications. Active product status and extensive inventory (19,800 units) provide reliable supply availability. ROHS3 compliance and MSL 1 rating ensure regulatory and manufacturing compatibility. The 8-VSON-CLIP (5x6) package maintains footprint compatibility with the original FDMS7560S. Gate voltage specification (+16V, -12V) differs from the original (±20V) and requires verification for asymmetric gate drive applications.

Both substitutes are active products with ROHS3 compliance, MSL 1 ratings, and surface mount configurations suitable for direct replacement in most applications. Selection between them depends on specific gate drive voltage requirements and thermal management constraints.

Frequently Asked Questions (FAQ)

Q: Can the BSC014NE2LSIATMA1 or CSD16401Q5 be used as direct pin-for-pin replacements for the FDMS7560S?

A: Both substitutes are 8-pin surface mount devices with compatible electrical specifications. However, package form factors differ (8-PQFN versus 8-TDSON and 8-VSON-CLIP). PCB layout verification is required to confirm footprint compatibility. Pin assignments must be verified against device datasheets to ensure correct gate, drain, and source connections.

Q: What are the key electrical advantages of the substitute parts?

A: The BSC014NE2LSIATMA1 reduces gate charge from 93 nC to 39 nC and lowers on-state resistance to 1.4 mOhm. The CSD16401Q5 achieves the lowest gate charge at 29 nC and supports higher continuous drain current at Tc (100A). Both reduce input capacitance, lowering gate drive power requirements and improving switching speed.

Q: Are there any gate voltage limitations with the substitute parts?

A: The FDMS7560S and BSC014NE2LSIATMA1 both support ±20V gate voltage. The CSD16401Q5 supports +16V and -12V, which is asymmetric. Applications requiring ±20V gate voltage symmetry must use the BSC014NE2LSIATMA1 or verify that the CSD16401Q5 gate voltage specification accommodates the design.

Q: How do the thermal characteristics compare?

A: The FDMS7560S dissipates 2.5W at Ta and 89W at Tc. The BSC014NE2LSIATMA1 dissipates 2.5W at Ta and 74W at Tc, providing improved thermal efficiency. The CSD16401Q5 dissipates 3.1W at Ta with no Tc specification provided. Lower on-state resistance in the substitutes reduces conduction losses in high-current applications.

Q: What is the impact of different package types on thermal performance?

A: The 8-PQFN (5x6), PG-TDSON-8-7, and 8-VSON-CLIP packages are all surface mount power packages with comparable thermal characteristics. Actual thermal performance depends on PCB layout, copper area, thermal vias, and heat sink design. Datasheet thermal resistance values (θJA and θJC) must be compared for specific applications.

Q: Are all substitute parts ROHS3 compliant and MSL 1 rated?

A: Yes. Both BSC014NE2LSIATMA1 and CSD16401Q5 are ROHS3 compliant with MSL 1 (Unlimited) ratings, matching the FDMS7560S environmental and manufacturing specifications.

Q: What is the availability status of these substitute parts?

A: The FDMS7560S is obsolete. The BSC014NE2LSIATMA1 (Infineon) and CSD16401Q5 (Texas Instruments) are both active products with confirmed inventory availability, ensuring long-term supply chain support.