FDMS6681Z P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS6681Z is a P-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 21.1A at Ta and 49A at Tc. This device is housed in an 8-PQFN (5x6) surface mount package and is part of the PowerTrench® series. The FDMS6681Z is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and gate drive requirements while accommodating available packaging options.

Key Parameters

Parameter	FDMS6681Z	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	21.1	A
Continuous Drain Current @ 25°C (Tc)	49	A
Rds On (Max) @ Id, Vgs	3.2 mOhm @ 22.1A, 10V	—
Gate Charge (Qg) @ Vgs	241 nC @ 10V	—
Vgs(th) (Max) @ Id	3 V @ 250µA	—
Input Capacitance (Ciss) @ Vds	10380 pF @ 15V	—
Power Dissipation (Max) Ta	2.5	W
Power Dissipation (Max) Tc	73	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	8-PQFN (5x6)	—
RoHS Status	ROHS3 Compliant	—
MSL Rating	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the FDMS6681Z are selected based on strict electrical and mechanical compatibility criteria. All substitute candidates must satisfy the following requirements:

Mandatory Matching Parameters:

FET Type: P-Channel
Drain to Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Ta): 15.3A or greater
Operating Temperature Range: -55°C to 150°C minimum
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
RoHS3 Compliance
Gate Drive Voltage: 4.5V to 10V compatibility

Acceptable Variations:

Package form factor may differ (8-PQFN, 5-DFN, PG-TDSON-8, DFN5060-8, 8-HSOP, PowerPAK SO-8)
Rds On values may vary within acceptable operating margins
Gate Charge (Qg) and Input Capacitance (Ciss) may differ based on package and die design
Product status may be Active (preferred) or Obsolete
MSL rating may vary (1 or 3)

Exclusion Criteria:

Vdss less than 30V
Continuous drain current (Ta) below 15.3A
Operating temperature maximum below 150°C
Non-RoHS3 compliant devices
Non-surface mount packages

Parameter Comparison

Parameter	FDMS6681Z	NTMFS005P03P8ZT1G	BSC030P03NS3GAUMA1	PJQ5427_R2_00001	RS1E220ATTB1	SI7465DP-T1-GE3	Unit
Manufacturer	onsemi	onsemi	Infineon Technologies	Panjit International Inc.	Rohm Semiconductor	Vishay Siliconix	—
FET Type	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel	—
Vdss	30	30	30	30	30	60	V
Id @ 25°C (Ta)	21.1	15.3	25.4	19	22	3.2	A
Id @ 25°C (Tc)	49	164	100	100	76	—	A
Rds On (Max) @ Id, Vgs	3.2 @ 22.1A, 10V	2.7 @ 22A, 10V	3 @ 50A, 10V	3.3 @ 20A, 10V	4.1 @ 22A, 10V	64 @ 5A, 10V	mOhm
Qg @ Vgs	241 @ 10V	112 @ 4.5V	186 @ 10V	68 @ 4.5V	130 @ 10V	40 @ 10V	nC
Vgs(th) (Max) @ Id	3 @ 250µA	3 @ 250µA	3.1 @ 345µA	2.5 @ 250µA	2.5 @ 2mA	3 @ 250µA	V
Ciss (Max) @ Vds	10380 @ 15V	7880 @ 15V	14000 @ 15V	8593 @ 15V	5850 @ 15V	—	pF
Power Dissipation (Max) Ta	2.5	0.9	2.5	2	3	1.5	W
Power Dissipation (Max) Tc	73	104	125	63	—	—	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150	-55 to 150	°C
Package	8-PQFN (5x6)	5-DFN (5x6)	PG-TDSON-8-1	DFN5060-8	8-HSOP	PowerPAK SO-8	—
Product Status	Obsolete	Active	Active	Active	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
MSL Rating	1 (Unlimited)	1 (Unlimited)	3 (168 Hours)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

NTMFS005P03P8ZT1G (onsemi) — Active product status with identical Vdss (30V) and comparable continuous drain current (15.3A Ta, 164A Tc). Offers superior Rds On performance (2.7 mOhm) and lower gate charge (112 nC), resulting in improved switching efficiency. Reduced input capacitance (7880 pF) facilitates faster gate drive response. Package differs (5-DFN vs. 8-PQFN), requiring PCB layout modification. MSL rating of 1 provides unlimited moisture sensitivity tolerance. Inventory availability is limited (862 pcs).

BSC030P03NS3GAUMA1 (Infineon Technologies) — Active product with OptiMOS™ series designation. Meets 30V Vdss requirement with higher continuous drain current (25.4A Ta, 100A Tc), providing design margin. Rds On of 3 mOhm at 50A, 10V is comparable to FDMS6681Z. Gate charge of 186 nC is within acceptable range. Higher input capacitance (14000 pF) may require gate drive circuit adjustment. MSL rating of 3 requires controlled storage (168 hours). Inventory availability is strong (3300 pcs). Package is PG-TDSON-8-1, requiring PCB footprint verification.

RS1E220ATTB1 (Rohm Semiconductor) — Active product with 30V Vdss and 22A continuous drain current (Ta), closely matching FDMS6681Z specifications. Rds On of 4.1 mOhm is slightly elevated but acceptable. Gate charge of 130 nC is moderate. Reduced input capacitance (5850 pF) simplifies gate drive design. Operating temperature maximum of 150°C matches requirement. MSL rating of 1 provides unlimited moisture tolerance. Inventory availability is excellent (20300 pcs). Package is 8-HSOP, requiring PCB layout verification.

Secondary Substitutes (Application-Dependent):

PJQ5427_R2_00001 (Panjit International Inc.) — Active product with 30V Vdss and 19A continuous drain current (Ta). Rds On of 3.3 mOhm is acceptable. Lower gate charge (68 nC @ 4.5V) enables faster switching. Vgs(th) of 2.5V is lower than FDMS6681Z, requiring gate drive circuit verification. Vgs maximum of ±20V is reduced from ±25V specification. Package is DFN5060-8, requiring PCB footprint confirmation. Inventory availability is moderate (1061 pcs).

SI7465DP-T1-GE3 (Vishay Siliconix) — Active product with elevated Vdss rating (60V) and significantly reduced continuous drain current (3.2A Ta). This device is not recommended as a direct substitute due to insufficient current handling capacity relative to FDMS6681Z requirements. Rds On of 64 mOhm is substantially higher, indicating poor performance match. Suitable only for applications with reduced current demands or where higher voltage margin is required.

Frequently Asked Questions (FAQ)

Q: Can NTMFS005P03P8ZT1G replace FDMS6681Z in all applications?

A: NTMFS005P03P8ZT1G meets the core electrical requirements (30V Vdss, 15.3A Ta minimum drain current, -55°C to 150°C operating range). However, the package differs (5-DFN vs. 8-PQFN), requiring PCB layout redesign. Lower gate charge (112 nC vs. 241 nC) may improve switching performance but requires gate drive circuit verification. Reduced input capacitance (7880 pF vs. 10380 pF) affects gate drive timing. Inventory is limited (862 pcs).

Q: What is the significance of the MSL rating difference between BSC030P03NS3GAUMA1 (MSL 3) and FDMS6681Z (MSL 1)?

A: MSL 3 rating requires controlled storage at 30°C and 60% relative humidity for a maximum of 168 hours before reflow soldering. MSL 1 (unlimited) allows indefinite storage without moisture control. For production environments with extended component storage, MSL 1 devices (NTMFS005P03P8ZT1G, PJQ5427_R2_00001, RS1E220ATTB1, SI7465DP-T1-GE3) are preferred. BSC030P03NS3GAUMA1 requires implementation of moisture control procedures.

Q: Why is SI7465DP-T1-GE3 listed as a substitute if it has only 3.2A continuous drain current?

A: SI7465DP-T1-GE3 is included in the substitute list based on the provided input parameters but is not recommended for applications requiring the full 21.1A continuous drain current of FDMS6681Z. This device is suitable only for low-current P-Channel switching applications where the 60V Vdss rating provides additional design margin. For standard FDMS6681Z replacement, use NTMFS005P03P8ZT1G, BSC030P03NS3GAUMA1, or RS1E220ATTB1.

Q: How do package differences affect PCB design when substituting FDMS6681Z?

A: FDMS6681Z uses 8-PQFN (5x6) packaging. Substitute parts use different packages: NTMFS005P03P8ZT1G (5-DFN), BSC030P03NS3GAUMA1 (PG-TDSON-8-1), PJQ5427_R2_00001 (DFN5060-8), RS1E220ATTB1 (8-HSOP), and SI7465DP-T1-GE3 (PowerPAK SO-8). Each package has different pin configurations, thermal pad dimensions, and PCB footprint requirements. PCB layout must be redesigned to accommodate the selected substitute package. Thermal performance may vary due to different die attach and lead frame designs.

Q: What is the impact of Rds On variation among substitute parts?

A: Rds On directly affects power dissipation and thermal performance. FDMS6681Z specifies 3.2 mOhm @ 22.1A, 10V. Substitutes range from 2.7 mOhm (NTMFS005P03P8ZT1G, superior) to 64 mOhm (SI7465DP-T1-GE3, unsuitable). Lower Rds On reduces conduction losses and heat generation. Higher Rds On increases power dissipation, requiring enhanced thermal management. For applications with tight thermal budgets, NTMFS005P03P8ZT1G or BSC030P03NS3GAUMA1 are preferred. For applications with relaxed thermal requirements, RS1E220ATTB1 or PJQ5427_R2_00001 are acceptable.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (NTMFS005P03P8ZT1G, BSC030P03NS3GAUMA1, PJQ5427_R2_00001, RS1E220ATTB1, SI7465DP-T1-GE3) are ROHS3 compliant, matching the FDMS6681Z compliance status. All devices are also EAR99 classified and REACH unaffected, maintaining regulatory compatibility.

Q: Which substitute offers the best inventory availability?

A: RS1E220ATTB1 (Rohm Semiconductor) has the highest inventory availability with 20300 pcs in stock. BSC030P03NS3GAUMA1 (Infineon) has 3300 pcs. PJQ5427_R2_00001 (Panjit) has 1061 pcs. NTMFS005P03P8ZT1G (onsemi) has 862 pcs. SI7465DP-T1-GE3 (Vishay) has 17400 pcs but is not recommended for direct replacement due to insufficient current rating.

Q: What gate drive voltage compatibility should be verified?

A: FDMS6681Z specifies drive voltages of 4.5V (Min Rds On) and 10V (Max Rds On). All substitute parts support 4.5V to 10V gate drive range, ensuring compatibility with standard gate driver circuits. However, gate charge (Qg) varies significantly: FDMS6681Z (241 nC @ 10V), NTMFS005P03P8ZT1G (112 nC @ 4.5V), BSC030P03NS3GAUMA1 (186 nC @ 10V), PJQ5427_R2_00001 (68 nC @ 4.5V), RS1E220ATTB1 (130 nC @ 10V), SI7465DP-T1-GE3 (40 nC @ 10V). Lower gate charge enables faster switching but may require gate drive circuit adjustment for optimal performance.

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