FDMS3660S-F121 Equivalent & Substitute Parts

Part Overview

The FDMS3660S-F121 is a dual N-channel MOSFET array manufactured by onsemi, designed for power switching applications requiring logic-level gate control. This device integrates two asymmetrical N-channel MOSFETs in a compact 8-PowerTDFN surface mount package with a maximum drain-source voltage rating of 30V and continuous drain current capabilities of 13A and 30A per channel.

The FDMS3660S-F121 is classified as an obsolete product. Identification of equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

FDMS3660S-F121

onsemiIn Stock: 1072FDMS3660S-F121 Datasheet

Current PartRFQ

FDMS3660S

onsemiIn Stock: 16805FDMS3660S Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the FDMS3660S-F121 is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Drain to Source Voltage (Vdss) must equal or exceed 30V
• Configuration must be 2 N-Channel (Dual) Asymmetrical
• Gate Threshold Voltage (Vgs(th)) must match 2.7V @ 250µA
• On-Resistance (Rds On) must not exceed 8mOhm @ 13A, 10V
• Gate Charge (Qg) must not exceed 29nC @ 10V
• Input Capacitance (Ciss) must not exceed 1765pF @ 15V
• Maximum Power Dissipation must equal or exceed 1W
• FET Feature must be Logic Level Gate

Mechanical Compatibility Requirements:

• Package Type must be 8-PowerTDFN
• Mounting Type must be Surface Mount
• Moisture Sensitivity Level (MSL) must be 1 (Unlimited)

Series Compatibility:

• Device must belong to the PowerTrench® series

The FDMS3660S meets all substitution criteria and is identified as an equivalent part for the FDMS3660S-F121.

Parameter Comparison

Engineering Selection Recommendations

The FDMS3660S is the direct equivalent substitute for the obsolete FDMS3660S-F121. Both devices share identical electrical and mechanical specifications across all critical parameters, including voltage rating, on-resistance, gate characteristics, and package configuration.

The FDMS3660S offers the following advantages for design continuity:

Product Status: The FDMS3660S maintains active product status with onsemi, ensuring ongoing availability and manufacturing support. The FDMS3660S-F121 is classified as obsolete, making the FDMS3660S the appropriate selection for new designs and production continuity.

Regulatory Compliance: The FDMS3660S carries ROHS3 compliance certification, whereas the main part does not specify RoHS status. Both devices maintain identical REACH Unaffected status and EAR99 export classification.

Supply Chain: The FDMS3660S demonstrates significantly higher inventory availability (16,766 pieces) compared to the FDMS3660S-F121 (1,003 pieces), supporting reliable procurement for ongoing production requirements.

Electrical Performance: The FDMS3660S exhibits enhanced continuous drain current ratings (30A and 60A per channel) compared to the main part (13A and 30A per channel), providing additional performance headroom while maintaining identical on-resistance and gate characteristics.

Packaging: Both devices utilize the 8-PowerTDFN surface mount package with identical MSL rating, ensuring direct PCB layout compatibility without design modification.

Frequently Asked Questions (FAQ)

Q: Can the FDMS3660S be used as a direct replacement for the FDMS3660S-F121 without circuit modification?

A: Yes. The FDMS3660S is electrically and mechanically identical to the FDMS3660S-F121 across all critical parameters. Both devices share the same drain-source voltage rating (30V), on-resistance (8mOhm @ 13A, 10V), gate threshold voltage (2.7V @ 250µA), and 8-PowerTDFN package configuration. No circuit modification is required for substitution.

Q: What is the difference in continuous drain current between these devices?

A: The FDMS3660S-F121 supports continuous drain currents of 13A and 30A per channel. The FDMS3660S supports continuous drain currents of 30A and 60A per channel. The FDMS3660S provides higher current capability while maintaining identical on-resistance at the 13A operating point, making it suitable for applications requiring increased current headroom.

Q: Are the gate drive requirements identical between the FDMS3660S-F121 and FDMS3660S?

A: Yes. Both devices feature logic-level gate operation with identical gate threshold voltage (2.7V @ 250µA), gate charge (29nC @ 10V), and input capacitance (1765pF @ 15V). Gate drive circuits designed for the FDMS3660S-F121 require no modification for the FDMS3660S.

Q: What is the significance of the FDMS3660S-F121 being classified as obsolete?

A: Obsolete product status indicates that onsemi has discontinued manufacturing and support for the FDMS3660S-F121. The FDMS3660S is the active equivalent product, ensuring continued availability, manufacturing support, and compliance with current regulatory standards. For new designs and ongoing production, the FDMS3660S is the appropriate selection.

Q: Are the package dimensions and PCB footprints identical?

A: Yes. Both the FDMS3660S-F121 and FDMS3660S utilize the 8-PowerTDFN package type with surface mount configuration. PCB layouts, footprints, and assembly processes are directly compatible without modification.

Q: Does the FDMS3660S meet current regulatory compliance requirements?

A: Yes. The FDMS3660S carries ROHS3 compliance certification and maintains REACH Unaffected status, meeting current regulatory requirements for electronic components. Both devices share identical EAR99 export classification and HTSUS tariff code (8541.29.0095).

Q: What is the moisture sensitivity level for both devices?

A: Both the FDMS3660S-F121 and FDMS3660S carry MSL rating of 1 (Unlimited), indicating unlimited shelf life without moisture bake-out requirements. Storage and handling procedures are identical for both devices.