FDMS3622S Equivalent & Substitute Parts

Part Overview

The FDMS3622S is a dual N-channel MOSFET array manufactured by onsemi, featuring a 25V drain-to-source voltage rating and continuous drain current capabilities of 17.5A and 34A. This component utilizes PowerTrench® technology in a 8-PowerTDFN surface mount package with logic level gate operation. The FDMS3622S is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity.

Substiute Parts

FDMS3622S
onsemiIn Stock: 6101FDMS3622S Datasheet
FDMS3622S
Current Part
FDPC8016S
onsemiIn Stock: 1682FDPC8016S Datasheet
FDPC8016S
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Key Parameters

Parameter Value
Drain to Source Voltage (Vdss) 25V
Continuous Drain Current (Id) @ 25°C 17.5A, 34A
On-Resistance (Rds On) @ Id, Vgs 5mOhm @ 17.5A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) @ Vds 1570pF @ 13V
Maximum Power Dissipation 1W
Configuration 2 N-Channel (Dual) Asymmetrical
Operating Temperature Range -55°C to 150°C (TJ)
Package Type 8-PowerTDFN (Surface Mount)
Series PowerTrench®
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the FDMS3622S is determined by electrical and mechanical compatibility across the following critical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 25V Vdss rating to ensure safe operation within the same voltage domain.

Current Handling Capability: The substitute must support continuous drain current ratings equal to or exceeding the FDMS3622S specifications (17.5A and 34A).

On-Resistance Performance: The Rds On value directly impacts power dissipation and thermal performance. Substitute parts with lower or equivalent Rds On values maintain or improve circuit efficiency.

Gate Characteristics: Logic level gate operation (Vgs(th) ≤ 2.5V) ensures compatibility with standard digital control signals.

Thermal and Power Specifications: Operating temperature range and maximum power dissipation must support the intended application environment.

Package and Mounting: Surface mount configuration with compatible pinout and thermal characteristics enables direct board-level substitution.

Compliance and Status: Active product status with current manufacturing and ROHS3 compliance ensures long-term availability and regulatory adherence.

Parameter Comparison

Parameter FDMS3622S FDPC8016S Compatibility Notes
Manufacturer onsemi onsemi Same manufacturer
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Identical component class
Configuration 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical Functionally equivalent
Drain to Source Voltage (Vdss) 25V 25V Identical rating
Continuous Drain Current (Id) @ 25°C 17.5A, 34A 20A, 35A FDPC8016S exceeds FDMS3622S
Rds On (Max) @ Id, Vgs 5mOhm @ 17.5A, 10V 3.8mOhm @ 20A, 10V FDPC8016S provides lower resistance
Gate Threshold Voltage (Vgs(th)) @ Id 2V @ 250µA 2.5V @ 250µA Both logic level compatible
Gate Charge (Qg) @ Vgs 26nC @ 10V 35nC @ 10V FDPC8016S has higher gate charge
Input Capacitance (Ciss) @ Vds 1570pF @ 13V 2375pF @ 13V FDPC8016S has higher capacitance
Maximum Power Dissipation 1W 2.1W, 2.3W FDPC8016S supports higher power
Operating Temperature Range -55°C to 150°C (TJ) -55°C to 150°C (TJ) Identical range
Mounting Type Surface Mount Surface Mount Compatible mounting
Package / Case 8-PowerTDFN 8-PowerWDFN Different package variants
Series PowerTrench® PowerTrench® Same technology family
Product Status Obsolete Active FDPC8016S actively manufactured
RoHS Status ROHS3 Compliant ROHS3 Compliant Both compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Identical MSL rating
REACH Status REACH Unaffected REACH Unaffected Both unaffected

Engineering Selection Recommendations

The FDPC8016S serves as a direct functional substitute for the obsolete FDMS3622S based on the following engineering criteria:

Voltage and Current Ratings: Both components maintain identical 25V Vdss ratings. The FDPC8016S provides enhanced continuous drain current capabilities (20A and 35A versus 17.5A and 34A), ensuring compatibility with existing circuit designs while offering performance margin.

On-Resistance Characteristics: The FDPC8016S delivers superior on-resistance performance (3.8mOhm at 20A versus 5mOhm at 17.5A), resulting in reduced power dissipation and improved thermal efficiency in equivalent operating conditions.

Gate and Control Characteristics: Both devices feature logic level gate operation with compatible threshold voltages (2V and 2.5V respectively), enabling direct integration with standard digital control circuits.

Thermal Performance: The FDPC8016S supports maximum power dissipation of 2.1W to 2.3W, compared to 1W for the FDMS3622S, providing enhanced thermal headroom for demanding applications.

Product Availability and Compliance: The FDPC8016S maintains active manufacturing status with ROHS3 compliance and REACH unaffected designation, ensuring long-term supply chain continuity and regulatory adherence.

Package Considerations: The FDPC8016S utilizes an 8-PowerWDFN package variant compared to the 8-PowerTDFN of the FDMS3622S. PCB layout modifications may be required to accommodate the different package footprint.

Frequently Asked Questions (FAQ)

Q: Can the FDPC8016S directly replace the FDMS3622S without circuit modifications?

A: Electrical substitution is valid based on voltage, current, and gate characteristic compatibility. However, the different package types (8-PowerTDFN versus 8-PowerWDFN) require PCB layout redesign. Thermal performance improvements in the FDPC8016S may allow for simplified thermal management in the new design.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are product status (obsolete versus active), package variant (PowerTDFN versus PowerWDFN), and performance enhancements in the FDPC8016S. The substitute offers lower on-resistance (3.8mOhm versus 5mOhm), higher current ratings (20A/35A versus 17.5A/34A), and greater power dissipation capability (2.1W-2.3W versus 1W).

Q: Are there any gate drive considerations when switching from FDMS3622S to FDPC8016S?

A: Both devices feature logic level gate operation with compatible threshold voltages. The FDPC8016S exhibits slightly higher gate charge (35nC versus 26nC) and input capacitance (2375pF versus 1570pF), which may marginally increase gate drive current requirements but remain compatible with standard digital control circuits.

Q: What is the impact of the higher input capacitance in the FDPC8016S?

A: The increased input capacitance (2375pF versus 1570pF) results in higher gate charge requirements during switching transitions. This affects gate drive circuit design and switching speed characteristics but does not prevent functional substitution in applications where the FDMS3622S was previously used.

Q: Are both parts suitable for the same operating temperature range?

A: Yes. Both the FDMS3622S and FDPC8016S operate across the identical temperature range of -55°C to 150°C (junction temperature), ensuring compatibility in thermally demanding environments.

Q: What compliance certifications apply to the FDPC8016S?

A: The FDPC8016S maintains ROHS3 compliance and REACH unaffected status, identical to the FDMS3622S. Both components carry MSL 1 (Unlimited) moisture sensitivity ratings, enabling standard handling and storage procedures.

Q: Is the FDPC8016S available in tape and reel packaging?

A: Yes. The FDPC8016S is supplied in Tape & Reel (TR) packaging format, suitable for automated assembly processes. Current inventory availability is documented at 1586 pieces.

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