FDMS2572 N-Channel MOSFET 150V 27A Equivalent & Substitute Parts

Part Overview

The FDMS2572 is an N-Channel MOSFET manufactured by onsemi, rated for 150V drain-to-source voltage with continuous drain current capabilities of 4.5A at Ta and 27A at Tc. This device operates in the UltraFET™ series and is housed in an 8-MLP (5x6) Power56 surface mount package. The part is Active status and RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the application's thermal and mechanical requirements. The FDMS2572 serves as a reference point for identifying functionally compatible alternatives in the N-Channel MOSFET category.

Substiute Parts

FDMS2572
onsemiIn Stock: 35287FDMS2572 Datasheet
FDMS2572
Current Part
BSC520N15NS3GATMA1
Infineon TechnologiesIn Stock: 11249BSC520N15NS3GATMA1 Datasheet
BSC520N15NS3GATMA1
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 150 V
Continuous Drain Current (Id) @ 25°C 4.5A (Ta), 27A (Tc) A
Rds On (Max) @ Id, Vgs 47 mOhm @ 4.5A, 10V mOhm
Gate Threshold Voltage Vgs(th) (Max) 4V @ 250µA V
Gate Charge (Qg) (Max) 43 nC @ 10V
Input Capacitance (Ciss) (Max) 2610 pF @ 75V
Power Dissipation (Max) 2.5W (Ta), 78W (Tc) W
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package 8-MLP (5x6), Power56
RoHS Status ROHS3 Compliant
MSL Rating 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the FDMS2572 are identified based on the following critical electrical and mechanical parameters:

Voltage Rating Equivalence: Drain-to-source voltage (Vdss) must equal 150V to ensure compatibility with the application's voltage stress requirements.

Current Capability: Continuous drain current (Id) at Tc must meet or exceed 27A to maintain thermal performance under worst-case conditions. Substitutes with lower Ta ratings are acceptable if Tc ratings are equivalent or superior.

On-Resistance (Rds On): Maximum on-resistance specifications must support the application's power dissipation budget. Rds On values within comparable ranges ensure switching efficiency and thermal management remain within design parameters.

Gate Charge and Capacitance: Gate charge (Qg) and input capacitance (Ciss) affect switching speed and driver requirements. Substitutes with lower gate charge values reduce driver stress and improve switching performance.

Package Compatibility: Surface mount packages with equivalent thermal and mechanical footprints allow direct board-level substitution without layout redesign.

Compliance and Status: Active product status and RoHS3 compliance ensure long-term availability and regulatory adherence.

Parameter Comparison

Parameter FDMS2572 (onsemi) BSC520N15NS3GATMA1 (Infineon) Unit
Manufacturer onsemi Infineon Technologies
FET Type N-Channel N-Channel
Drain to Source Voltage (Vdss) 150 150 V
Continuous Drain Current (Id) @ Tc 27 21 A
Rds On (Max) @ Vgs 10V 47 mOhm @ 4.5A 52 mOhm @ 18A mOhm
Gate Threshold Voltage Vgs(th) (Max) 4V @ 250µA 4V @ 35µA V
Gate Charge (Qg) (Max) @ 10V 43 12 nC
Input Capacitance (Ciss) (Max) @ 75V 2610 890 pF
Power Dissipation (Max) @ Tc 78 57 W
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Surface Mount Surface Mount
Package Type 8-PowerWDFN 8-PowerTDFN
RoHS Status ROHS3 Compliant ROHS3 Compliant
MSL Rating 1 (Unlimited) 1 (Unlimited)
Product Status Active Active

Engineering Selection Recommendations

FDMS2572 Primary Selection: The FDMS2572 remains the primary choice when the original part number is available and inventory permits. This device offers the highest continuous drain current rating (27A at Tc) and maximum power dissipation capability (78W at Tc) within the 150V N-Channel MOSFET category specified.

BSC520N15NS3GATMA1 Substitution Criteria: The Infineon BSC520N15NS3GATMA1 serves as a functional substitute when FDMS2572 availability is constrained. This part maintains electrical equivalence through:

  • Identical 150V Vdss rating
  • Continuous drain current of 21A at Tc, providing 78% of the FDMS2572 capability
  • Comparable on-resistance performance (52 mOhm vs. 47 mOhm)
  • Significantly lower gate charge (12 nC vs. 43 nC), reducing driver requirements
  • Lower input capacitance (890 pF vs. 2610 pF), improving switching characteristics
  • Identical operating temperature range (-55°C to 150°C)
  • Active product status with RoHS3 compliance

Package Consideration: The FDMS2572 uses 8-PowerWDFN packaging while the BSC520N15NS3GATMA1 uses 8-PowerTDFN packaging. Both are 8-pin surface mount packages with equivalent thermal performance. Physical footprint verification is required before board-level substitution to confirm pad layout compatibility.

Compliance Status: Both parts maintain ROHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status, ensuring regulatory and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the BSC520N15NS3GATMA1 directly replace the FDMS2572 on a PCB?

A: Direct replacement requires physical footprint verification. While both parts are 8-pin surface mount devices, the FDMS2572 uses 8-PowerWDFN packaging and the BSC520N15NS3GATMA1 uses 8-PowerTDFN packaging. Pad layout and thermal via configurations may differ. Consult package datasheets to confirm pad-to-pad compatibility before substitution.

Q: What is the current capacity difference between these parts?

A: The FDMS2572 provides 27A continuous drain current at Tc, while the BSC520N15NS3GATMA1 provides 21A at Tc. The BSC520N15NS3GATMA1 delivers approximately 78% of the FDMS2572 current capacity. Applications requiring the full 27A rating must use the FDMS2572.

Q: How do gate charge differences affect circuit design?

A: The BSC520N15NS3GATMA1 has significantly lower gate charge (12 nC vs. 43 nC at 10V). Lower gate charge reduces the charge that the gate driver must supply, resulting in faster switching transitions and reduced driver power dissipation. Existing gate driver circuits designed for the FDMS2572 will operate more efficiently with the BSC520N15NS3GATMA1.

Q: Are both parts suitable for high-frequency switching applications?

A: The BSC520N15NS3GATMA1 is better suited for high-frequency applications due to its lower gate charge (12 nC) and input capacitance (890 pF) compared to the FDMS2572 (43 nC and 2610 pF respectively). Lower capacitance and charge values enable faster switching speeds and reduced switching losses.

Q: Do both parts have identical voltage ratings?

A: Yes. Both the FDMS2572 and BSC520N15NS3GATMA1 are rated for 150V drain-to-source voltage (Vdss). They are electrically equivalent in terms of voltage stress capability.

Q: What is the thermal performance difference?

A: The FDMS2572 supports 78W maximum power dissipation at Tc, while the BSC520N15NS3GATMA1 supports 57W at Tc. The FDMS2572 provides approximately 37% higher thermal capacity. Applications with high power dissipation requirements should prioritize the FDMS2572.

Q: Are both parts RoHS compliant?

A: Yes. Both the FDMS2572 and BSC520N15NS3GATMA1 are RoHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity ratings, ensuring compatibility with lead-free manufacturing processes and long-term storage without moisture bake-out requirements.

Q: What is the gate threshold voltage difference?

A: Both parts have a maximum gate threshold voltage of 4V, but at different test currents. The FDMS2572 is specified at 250µA while the BSC520N15NS3GATMA1 is specified at 35µA. This difference reflects different measurement methodologies but does not affect practical gate drive requirements, as both parts operate with standard 10V gate drive voltages.

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