FDMS2510SDC N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS2510SDC is an N-Channel MOSFET manufactured by onsemi, rated for 25V drain-to-source voltage with continuous drain current of 28A (Ta) and 49A (Tc). This device features the Dual Cool™, PowerTrench®, and SyncFET™ technology series and is housed in an 8-PQFN (5x6) surface mount package. The FDMS2510SDC is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package form factors while meeting modern compliance standards.

Key Parameters

Parameter	FDMS2510SDC
Drain-to-Source Voltage (Vdss)	25 V
Continuous Drain Current @ 25°C (Ta)	28 A
Continuous Drain Current @ 25°C (Tc)	49 A
RDS(on) Max @ Id, Vgs	2.9 mOhm @ 23A, 10V
Gate Charge (Qg) Max @ Vgs	45 nC @ 10V
Input Capacitance (Ciss) Max @ Vds	2780 pF @ 13V
Power Dissipation Max (Ta)	3.3 W
Power Dissipation Max (Tc)	60 W
Operating Temperature Range	-55°C to 150°C (TJ)
Package Type	8-PQFN (5x6)
Mounting Type	Surface Mount
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution eligibility for the FDMS2510SDC is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must be equal to or greater than 25V
Continuous Drain Current (Ta) must meet or exceed 28A
Continuous Drain Current (Tc) must meet or exceed 49A
RDS(on) characteristics must support equivalent or superior on-state performance
Gate Charge (Qg) and Input Capacitance (Ciss) must be compatible with existing gate drive circuitry

Mechanical and Thermal Requirements:

Surface mount package configuration
Operating temperature range of -55°C to 150°C (TJ)
Thermal performance (power dissipation) must support application requirements
Package footprint compatibility with 8-pin power semiconductor configurations

Compliance and Availability:

Active product status preferred for long-term supply assurance
RoHS3 compliance for modern manufacturing standards
Moisture Sensitivity Level (MSL) of 1 (Unlimited)
REACH compliance status

The three substitute parts listed below satisfy these criteria with varying trade-offs in current handling, thermal performance, and gate charge characteristics.

Parameter Comparison

Parameter	FDMS2510SDC (onsemi)	CSD16407Q5 (TI)	BSC032NE2LSATMA1 (Infineon)	RS1E280BNTB (Rohm)
Vdss (V)	25	25	25	30
Id @ 25°C Ta (A)	28	31	22	28
Id @ 25°C Tc (A)	49	100	84	80
RDS(on) Max (mOhm)	2.9 @ 23A, 10V	2.4 @ 25A, 10V	3.2 @ 30A, 10V	2.3 @ 28A, 10V
Qg Max @ Vgs (nC)	45 @ 10V	18 @ 4.5V	16 @ 10V	94 @ 10V
Ciss Max @ Vds (pF)	2780 @ 13V	2660 @ 12.5V	1200 @ 12V	5100 @ 15V
Power Dissipation Ta (W)	3.3	3.1	2.8	3.0
Power Dissipation Tc (W)	60	Not specified	78	30
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-PQFN (5x6)	8-VSONP (5x6)	PG-TDSON-8-6	8-HSOP
Product Status	Obsolete	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

CSD16407Q5 (Texas Instruments NexFET™ Series)

The CSD16407Q5 is an active product with superior continuous drain current performance (31A Ta, 100A Tc) compared to the FDMS2510SDC. This device offers the lowest RDS(on) specification (2.4 mOhm @ 25A, 10V) and significantly reduced gate charge (18 nC @ 4.5V), resulting in improved switching efficiency and reduced gate drive power requirements. The 8-VSONP (5x6) package maintains identical footprint dimensions to the original part. ROHS3 compliance and active product status ensure long-term availability. This substitute is suitable for applications prioritizing switching performance and thermal efficiency.

BSC032NE2LSATMA1 (Infineon OptiMOS™ Series)

The BSC032NE2LSATMA1 is an active product offering the highest continuous drain current in the Tc rating (84A) among all substitutes, with moderate RDS(on) performance (3.2 mOhm @ 30A, 10V). This device features the lowest input capacitance (1200 pF @ 12V), reducing gate drive complexity. The PG-TDSON-8-6 package differs from the original 8-PQFN footprint and requires PCB layout verification. ROHS3 compliance and active status support modern manufacturing requirements. This substitute is suitable for applications requiring maximum thermal headroom and lower gate capacitance.

RS1E280BNTB (Rohm Semiconductor)

The RS1E280BNTB is an active product with matched continuous drain current at Ta (28A) and the lowest RDS(on) specification (2.3 mOhm @ 28A, 10V). The device features a higher Vdss rating (30V), providing additional voltage margin. However, this substitute exhibits significantly higher gate charge (94 nC @ 10V) and input capacitance (5100 pF @ 15V), requiring gate drive circuit evaluation. The 8-HSOP package differs from the original footprint and requires PCB layout verification. ROHS3 compliance and active status ensure supply continuity. This substitute is suitable for applications with higher voltage tolerance and lower switching frequency requirements.

Frequently Asked Questions (FAQ)

Q: Can the CSD16407Q5 directly replace the FDMS2510SDC without PCB modifications?

A: The CSD16407Q5 uses an 8-VSONP (5x6) package with identical footprint dimensions to the original 8-PQFN (5x6). Direct PCB replacement is possible without layout modifications. However, gate drive characteristics differ due to reduced gate charge (18 nC vs. 45 nC), which may improve switching performance but requires verification with existing gate drive circuitry.

Q: What are the package compatibility considerations for the BSC032NE2LSATMA1?

A: The BSC032NE2LSATMA1 uses a PG-TDSON-8-6 package, which differs from the original 8-PQFN (5x6) footprint. PCB layout modifications are required. Pin configuration and thermal pad placement must be verified against the original design before implementation.

Q: Which substitute offers the best thermal performance?

A: The BSC032NE2LSATMA1 provides the highest continuous drain current rating at Tc (84A) and power dissipation capability (78W Tc), offering superior thermal headroom. The CSD16407Q5 also provides excellent thermal performance (100A Tc) with lower on-state losses due to reduced RDS(on).

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The CSD16407Q5, BSC032NE2LSATMA1, and RS1E280BNTB are all ROHS3 compliant. The original FDMS2510SDC RoHS status is not specified in the provided data.

Q: What is the impact of gate charge differences on circuit design?

A: Gate charge directly affects gate drive power consumption and switching speed. The CSD16407Q5 (18 nC) requires significantly less gate drive power than the original (45 nC) or the RS1E280BNTB (94 nC). Applications with fixed gate drive current sources may experience different switching characteristics and should be evaluated accordingly.

Q: Can the RS1E280BNTB be used in circuits designed for 25V operation?

A: Yes. The RS1E280BNTB is rated for 30V Vdss, which exceeds the 25V requirement of the original circuit. The device operates safely at 25V with additional voltage margin. However, the 8-HSOP package requires PCB layout modifications.

Q: What is the moisture sensitivity level for all parts?

A: All parts, including the original FDMS2510SDC and all three substitutes, have a Moisture Sensitivity Level (MSL) of 1 (Unlimited), indicating no moisture sensitivity restrictions for storage and handling.

Q: Which substitute has the lowest on-state resistance?

A: The RS1E280BNTB offers the lowest RDS(on) specification at 2.3 mOhm @ 28A, 10V, followed by the CSD16407Q5 at 2.4 mOhm @ 25A, 10V. The original FDMS2510SDC specifies 2.9 mOhm @ 23A, 10V.

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