FDMS10C4D2N N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS10C4D2N is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 17A continuous drain current at 25°C. This device is housed in an 8-PQFN (5x6) surface mount package and is designed for general-purpose switching and amplification applications requiring moderate current handling in compact form factors. The part maintains Active product status and is RoHS3 compliant with unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible package footprints and thermal characteristics. Alternative devices may be required due to inventory constraints, manufacturing discontinuation, or application-specific performance optimization.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	17	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	4.2 mOhm @ 44A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	65	nC @ 10V
Power Dissipation (Max)	125	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-PQFN (5x6)	Surface Mount
Vgs (Max)	±20	V
Input Capacitance (Ciss Max) @ Vds	4500	pF @ 50V

Substitute Part Grouping Explanation

Substitute parts for the FDMS10C4D2N are identified based on strict electrical and mechanical compatibility criteria. The primary substitution logic is based on the following parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
FET Type: N-Channel MOSFET technology
Package Footprint: 8-pin surface mount with 5x6mm dimensions
Operating Temperature Range: Must support -55°C to 150°C
Gate Voltage Rating (Vgs Max): ±20V compatibility
RoHS3 Compliance and MSL 1 rating

Performance Consideration Parameters:

Continuous Drain Current (Id): Substitute must support minimum 17A at 25°C
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Substitute must handle thermal requirements

Substitutes are grouped as direct equivalents when all critical parameters align and the device maintains identical or superior electrical performance characteristics within the specified operating envelope.

Parameter Comparison

Parameter	FDMS10C4D2N (onsemi)	AONS66916 (Alpha & Omega)	Unit
Manufacturer	onsemi	Alpha & Omega Semiconductor Inc.	—
FET Type	N-Channel	N-Channel	—
Drain-to-Source Voltage (Vdss)	100	100	V
Continuous Drain Current (Id) @ 25°C	17	100	A (Tc)
On-State Resistance (Rds On Max)	4.2 @ 44A, 10V	3.6 @ 20A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	3.6	V @ 250µA
Gate Charge (Qg Max) @ Vgs	65	95	nC @ 10V
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss Max) @ Vds	4500	5325	pF @ 50V
Power Dissipation (Max)	125	215	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Package Type	8-PQFN (5x6)	8-DFN (5x6)	Surface Mount
RoHS3 Compliance	Yes	Yes	—
MSL Rating	1 (Unlimited)	1 (Unlimited)	—
Product Status	Active	Active	—

Engineering Selection Recommendations

AONS66916 Substitution Criteria:

The AONS66916 from Alpha & Omega Semiconductor Inc. qualifies as a functional substitute for the FDMS10C4D2N based on the following engineering parameters:

Voltage Rating Compatibility: Both devices are rated for 100V Vdss, ensuring identical voltage stress tolerance in circuit applications.
Gate Voltage Compatibility: Both devices support ±20V Vgs maximum, allowing direct gate drive circuit compatibility without modification.
Operating Temperature Alignment: Both devices operate across the identical -55°C to 150°C temperature range, ensuring thermal performance equivalence.
Regulatory Compliance: Both devices maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, satisfying identical supply chain and assembly requirements.
Package Footprint: Both devices utilize 8-pin surface mount packages with 5x6mm dimensions, enabling direct PCB layout compatibility.
Current Capability: The AONS66916 provides 100A continuous drain current, exceeding the FDMS10C4D2N requirement of 17A, offering superior current handling capacity.
Thermal Performance: The AONS66916 provides 215W maximum power dissipation compared to 125W in the FDMS10C4D2N, enabling enhanced thermal margin in power-intensive applications.
On-State Resistance: The AONS66916 exhibits 3.6 mOhm Rds On (measured at 20A, 10V) compared to 4.2 mOhm in the FDMS10C4D2N, resulting in lower conduction losses.

Product Status Verification: Both devices maintain Active product status, confirming ongoing manufacturing availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the AONS66916 be used as a direct replacement for the FDMS10C4D2N in existing circuit designs?

A: Yes. Both devices share identical voltage ratings (100V Vdss), gate voltage specifications (±20V Vgs), operating temperature ranges (-55°C to 150°C), and surface mount package footprints (8-pin, 5x6mm). No circuit modifications are required for substitution.

Q: What are the key electrical differences between these two devices?

A: The AONS66916 provides higher continuous drain current (100A vs. 17A), lower on-state resistance (3.6 mOhm vs. 4.2 mOhm), and greater power dissipation capability (215W vs. 125W). Gate charge is higher in the AONS66916 (95 nC vs. 65 nC), which may affect switching speed in high-frequency applications.

Q: Are there package compatibility concerns when substituting these parts?

A: Both devices use 8-pin surface mount packages with identical 5x6mm dimensions. The FDMS10C4D2N uses 8-PQFN packaging while the AONS66916 uses 8-DFN packaging. Both package types maintain compatible PCB footprints for this size class, though specific land pattern verification with component datasheets is necessary for final assembly validation.

Q: Do both devices meet the same regulatory and compliance standards?

A: Yes. Both the FDMS10C4D2N and AONS66916 are RoHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings. Both devices are REACH unaffected and classified under ECCN EAR99, ensuring identical supply chain compliance requirements.

Q: Which device should be selected for applications requiring maximum current handling?

A: The AONS66916 is suitable for applications requiring higher current capacity, offering 100A continuous drain current versus 17A in the FDMS10C4D2N. The FDMS10C4D2N remains appropriate for applications with lower current requirements and lower gate charge switching characteristics.

Q: How do the gate charge specifications affect circuit performance?

A: The FDMS10C4D2N exhibits lower gate charge (65 nC vs. 95 nC), resulting in faster switching transitions and reduced gate drive power requirements. The AONS66916's higher gate charge may require increased gate drive current in high-frequency switching applications.

Q: Are both devices available in equivalent inventory quantities?

A: Current inventory shows 4450 pieces of FDMS10C4D2N and 4087 pieces of AONS66916 in stock as new original components, providing comparable supply availability for both devices.

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