FDMS0310AS N-Channel 30V 19A/22A MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS0310AS is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 19A at Ta and 22A at Tc. This device is housed in an 8-PQFN (5x6) surface mount package and belongs to the PowerTrench® and SyncFET™ series. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing due to inventory constraints, supply chain considerations, or specific application requirements while maintaining electrical and mechanical compatibility within the defined parameter ranges.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	19	A
Continuous Drain Current @ 25°C (Tc)	22	A
Rds On (Max) @ 19A, 10V	4.3	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	3	V
Gate Charge (Qg) @ 10V	37	nC
Input Capacitance (Ciss) @ 15V	2280	pF
Power Dissipation (Ta)	2.5	W
Power Dissipation (Tc)	41	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	8-PQFN (5x6)	—
RoHS Status	ROHS3 Compliant	—
MSL Rating	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the FDMS0310AS are classified based on electrical parameter equivalence and mechanical compatibility. The substitution logic is determined by the following critical parameters:

Electrical Equivalence Criteria:

Drain-to-source voltage (Vdss) must equal 30V
Continuous drain current must meet or exceed 19A at Ta and 22A at Tc
On-resistance (Rds On) must not exceed 4.3mOhm at specified conditions
Gate threshold voltage (Vgs(th)) must be within ±20V maximum gate voltage specification
Gate charge (Qg) and input capacitance (Ciss) must be compatible with drive circuit requirements
Operating temperature range must encompass -55°C to 150°C minimum

Mechanical Compatibility Criteria:

Surface mount technology required
Package footprint must be compatible with 8-PQFN (5x6) or equivalent 8-pin power package
Moisture sensitivity level must be MSL 1 or better
RoHS3 compliance required

Substitute parts are organized into two categories: parametric equivalents (matching all key electrical specifications) and similar parts (meeting core voltage and current requirements with acceptable variations in secondary parameters).

Parameter Comparison

Parameter	FDMS0310AS (onsemi)	FDMS8026S (Fairchild)	CSD17510Q5A (TI)	DMTH3004LPS-13 (Diodes)	RS1E180BNTB (Rohm)	RS1E200GNTB (Rohm)
Manufacturer	onsemi	Fairchild Semiconductor	Texas Instruments	Diodes Incorporated	Rohm Semiconductor	Rohm Semiconductor
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	30	30	30	30	30	30
Id @ Ta (A)	19	19	20	22	—	20
Id @ Tc (A)	22	22	100	145	60	57
Rds On (mOhm) @ specified Id, 10V	4.3 @ 19A	4.3 @ 19A	5.2 @ 20A	3.8 @ 20A	4.9 @ 18A	4.6 @ 20A
Vgs(th) (V) @ specified Id	3 @ 1mA	3 @ 1mA	2.1 @ 250µA	3 @ 250µA	2.5 @ 1mA	2.5 @ 1mA
Qg (nC) @ specified Vgs	37 @ 10V	37 @ 10V	8.3 @ 4.5V	43.7 @ 10V	46 @ 10V	16.8 @ 10V
Ciss (pF) @ 15V	2280	2280	1250	2370	2400	1080
Power Dissipation Ta (W)	2.5	2.5	3	3.2	3	3
Power Dissipation Tc (W)	41	41	—	136	25	25
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 175	to 150	to 150
Package	8-PQFN (5x6)	8-PQFN (5x6)	8-VSONP (5x6)	PowerDI5060-8	CPT3	8-HSOP
Packaging Type	Tape & Reel (TR)	Bulk	Tape & Reel (TR)	Tape & Reel (TR)	Cut Tape (CT) & Digi-Reel®	Cut Tape (CT) & Digi-Reel®
RoHS Status	ROHS3 Compliant	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	—	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Parametric Equivalent:

FDMS8026S (Fairchild Semiconductor) is a parametric equivalent to the FDMS0310AS. Both devices share identical electrical specifications including 30V Vdss, 19A/22A continuous drain current, 4.3mOhm Rds On, and 37nC gate charge. Both operate across -55°C to 150°C and are housed in 8-PQFN (5x6) packages. The FDMS8026S is available in bulk packaging and maintains active product status with RoHS3 compliance. This part provides direct functional substitution with 2800 units in stock.

Similar Parts with Acceptable Variations:

CSD17510Q5A (Texas Instruments NexFET™ series) meets core voltage and current requirements with 30V Vdss and 20A/100A continuous drain current. The device exhibits lower gate charge (8.3nC) and reduced input capacitance (1250pF), resulting in faster switching characteristics. On-resistance is slightly elevated at 5.2mOhm. The 8-VSONP (5x6) package provides mechanical compatibility. This part is suitable for applications where reduced gate drive requirements and improved thermal performance at high case temperatures are beneficial. RoHS3 compliant with 17600 units in stock.

DMTH3004LPS-13 (Diodes Incorporated) provides enhanced performance with 22A/145A continuous drain current and superior on-resistance of 3.8mOhm at 20A. The PowerDI5060-8 package offers improved thermal dissipation (136W at Tc) and extended operating temperature to 175°C. This part includes AEC-Q101 automotive qualification and is suitable for high-reliability applications. RoHS3 compliant with 9368 units in stock.

RS1E180BNTB (Rohm Semiconductor) delivers 60A continuous drain current at Tc with 4.9mOhm on-resistance. The CPT3 package (TO-252-3 DPAK variant) provides a different footprint requiring PCB layout modification. Gate charge of 46nC and input capacitance of 2400pF are comparable to the main part. This option is suitable for applications prioritizing high current capability. RoHS3 compliant with 10054 units in stock.

RS1E200GNTB (Rohm Semiconductor) offers 20A/57A continuous drain current with 4.6mOhm on-resistance and significantly reduced gate charge (16.8nC) and input capacitance (1080pF). The 8-HSOP package requires PCB layout modification. This part is optimized for low-gate-drive applications. RoHS3 compliant with 9300 units in stock.

All substitute parts maintain active product status, RoHS3 compliance, and MSL 1 rating. Selection should be based on specific application requirements including thermal management, gate drive capability, package footprint constraints, and supply availability.

Frequently Asked Questions (FAQ)

Q: Can FDMS8026S directly replace FDMS0310AS without PCB modification?

A: Yes. FDMS8026S is a parametric equivalent with identical electrical specifications and the same 8-PQFN (5x6) package footprint. No PCB layout changes are required. Both parts are rated for 30V, 19A/22A continuous drain current, and 4.3mOhm on-resistance.

Q: What are the key differences between FDMS0310AS and CSD17510Q5A?

A: Both devices meet the 30V voltage rating and provide adequate current handling (20A/100A for CSD17510Q5A). The primary differences are: CSD17510Q5A has lower gate charge (8.3nC vs. 37nC), reduced input capacitance (1250pF vs. 2280pF), and slightly higher on-resistance (5.2mOhm vs. 4.3mOhm). The 8-VSONP package is mechanically compatible with 8-PQFN footprints. CSD17510Q5A is preferred for applications requiring faster switching and lower gate drive power.

Q: Why does DMTH3004LPS-13 have different package designation despite similar footprint?

A: DMTH3004LPS-13 uses the PowerDI5060-8 package, which is a high-power variant of the 8-pin power package family. While the 5x6mm footprint is mechanically compatible, the PowerDI5060-8 design provides enhanced thermal performance through improved die attachment and lead frame design, enabling 136W power dissipation at Tc compared to 41W for FDMS0310AS. PCB thermal design may require modification to fully utilize this capability.

Q: Are RS1E180BNTB and RS1E200GNTB pin-compatible with FDMS0310AS?

A: No. RS1E180BNTB uses CPT3 package (TO-252-3 DPAK variant) and RS1E200GNTB uses 8-HSOP package. Both require PCB layout modification compared to the 8-PQFN footprint of FDMS0310AS. These parts are suitable for redesign scenarios where package change is acceptable.

Q: Which substitute part has the lowest on-resistance?

A: DMTH3004LPS-13 has the lowest on-resistance at 3.8mOhm (measured at 20A, 10V), compared to 4.3mOhm for FDMS0310AS. This results in reduced power dissipation and heat generation in high-current applications.

Q: Do all substitute parts meet RoHS3 compliance?

A: Yes. FDMS8026S, CSD17510Q5A, DMTH3004LPS-13, RS1E180BNTB, and RS1E200GNTB are all RoHS3 compliant. All parts maintain MSL 1 (unlimited) moisture sensitivity level.

Q: Which substitute part is qualified for automotive applications?

A: DMTH3004LPS-13 includes AEC-Q101 automotive qualification and is rated for extended operating temperature to 175°C. This part is suitable for automotive and high-reliability industrial applications.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. Lower gate charge (CSD17510Q5A at 8.3nC, RS1E200GNTB at 16.8nC) reduces gate drive power and enables faster switching. Higher gate charge (DMTH3004LPS-13 at 43.7nC, RS1E180BNTB at 46nC) requires more robust gate drive circuits but may provide improved noise immunity. Selection depends on gate driver capability and switching frequency requirements.

Q: Can substitute parts be mixed in the same design?

A: Mixing different substitute parts in the same circuit is not recommended unless the gate drive circuit and PCB layout are designed to accommodate variations in gate charge, input capacitance, and package footprint. Consistent part selection ensures predictable circuit behavior and thermal performance.

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