FDMS0308AS N-Channel 30V 24A/49A MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS0308AS is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 24A at Ta and 49A at Tc. This device operates in the Surface Mount 8-PQFN (5x6) package and is part of the PowerTrench® and SyncFET™ series. The part is currently Active in product status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing due to inventory constraints, supply chain considerations, or specific application performance parameters within the defined electrical and mechanical specifications.

Substiute Parts

FDMS0308AS

onsemiIn Stock: 38216FDMS0308AS Datasheet

Current PartRFQ

FDMS8025S

Fairchild SemiconductorIn Stock: 20147FDMS8025S Datasheet

Parametric EquivalentRFQ

BSZ0503NSIATMA1

Infineon TechnologiesIn Stock: 5120BSZ0503NSIATMA1 Datasheet

SimilarRFQ

CSD17505Q5A

Texas InstrumentsIn Stock: 19746CSD17505Q5A Datasheet

SimilarRFQ

RS1E240GNTB

Rohm SemiconductorIn Stock: 15991RS1E240GNTB Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDMS0308AS are classified based on electrical and mechanical parameter alignment within the N-Channel MOSFET category. Substitution eligibility is determined by the following critical parameters:

Primary Substitution Criteria:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Continuous Drain Current (Id) @ 25°C: Minimum 24A at Ta
• Vgs (Max): ±20V
• Operating Temperature Range: -55°C to 150°C (TJ)
• RoHS3 Compliance
• MSL 1 (Unlimited)

Parametric Equivalent Classification: Parts meeting all primary criteria with identical or superior electrical performance characteristics within the specified voltage and current ratings are classified as parametric equivalents. The FDMS8025S from Fairchild Semiconductor meets all primary criteria with identical electrical specifications.

Similar Part Classification: Parts meeting primary voltage, current, and temperature criteria but with variations in secondary parameters such as gate charge, input capacitance, or on-resistance are classified as similar parts. These include the BSZ0503NSIATMA1 (Infineon), CSD17505Q5A (Texas Instruments), and RS1E240GNTB (Rohm Semiconductor).

Parameter Comparison

Engineering Selection Recommendations

FDMS8025S (Fairchild Semiconductor) - Parametric Equivalent

The FDMS8025S is a direct parametric equivalent to the FDMS0308AS. Both devices share identical electrical specifications including 30V Vdss, 24A continuous drain current at Ta, 49A at Tc, and 2.8mOhm on-resistance at 24A and 10V gate-source voltage. Both are packaged in 8-PQFN (5x6) surface mount configuration. The FDMS8025S is Active in product status with 20,100 pieces in stock inventory. This part is suitable for direct substitution in applications where the FDMS0308AS is specified.

BSZ0503NSIATMA1 (Infineon Technologies) - Similar Part

The BSZ0503NSIATMA1 operates at the same 30V Vdss rating with 20A continuous drain current at Ta and 40A at Tc, representing a reduction in current capacity compared to the FDMS0308AS. On-resistance is 3.4mOhm at 20A and 10V gate-source voltage. The device is packaged in PG-TSDSON-8-FL surface mount configuration, which differs from the FDMS0308AS package. Gate charge is reduced to 20 nC at 10V, and input capacitance is 1300 pF at 15V. This part is suitable for applications where current requirements do not exceed 20A at Ta or where the alternative package is acceptable. The BSZ0503NSIATMA1 is Active in product status with RoHS3 compliance and 5,100 pieces in stock.

CSD17505Q5A (Texas Instruments) - Similar Part

The CSD17505Q5A operates at 30V Vdss with 24A continuous drain current at Ta and 100A at Tc, providing superior current capacity at Tc. On-resistance is 3.5mOhm at 20A and 10V gate-source voltage. The device is packaged in 8-VSONP (5x6) surface mount configuration. Gate charge is reduced to 13 nC at 4.5V, and input capacitance is 1980 pF at 15V. Power dissipation at Ta is 3.2W. This part is suitable for applications requiring higher current capacity at elevated case temperatures. The CSD17505Q5A is Active in product status with RoHS3 compliance and 19,705 pieces in stock.

RS1E240GNTB (Rohm Semiconductor) - Similar Part

The RS1E240GNTB operates at 30V Vdss with 24A continuous drain current at Ta and 72A at Tc. On-resistance is 3.3mOhm at 24A and 10V gate-source voltage. The device is packaged in 8-HSOP surface mount configuration. Gate charge is 23 nC at 10V, and input capacitance is 1500 pF at 15V. Power dissipation is 3W at Ta and 27W at Tc. This part is suitable for applications where the 8-HSOP package is acceptable. The RS1E240GNTB is Active in product status with RoHS3 compliance and 15,933 pieces in stock.

All substitute parts maintain Active product status, RoHS3 compliance, and MSL 1 (Unlimited) moisture sensitivity level, ensuring compatibility with current manufacturing and environmental standards.

Frequently Asked Questions (FAQ)

Q: Can the FDMS8025S be used as a direct replacement for the FDMS0308AS?

A: Yes. The FDMS8025S is a parametric equivalent with identical electrical specifications including 30V Vdss, 24A continuous drain current at Ta, 49A at Tc, and 2.8mOhm on-resistance. Both devices use the same 8-PQFN (5x6) package. Direct substitution is supported without circuit modification.

Q: What are the key differences between the FDMS0308AS and the BSZ0503NSIATMA1?

A: The BSZ0503NSIATMA1 has reduced continuous drain current (20A at Ta versus 24A) and different on-resistance (3.4mOhm at 20A versus 2.8mOhm at 24A). The package differs: PG-TSDSON-8-FL versus 8-PQFN (5x6). Gate charge is lower at 20 nC versus 47 nC. Substitution is suitable only for applications where current requirements do not exceed 20A at Ta.

Q: Why does the CSD17505Q5A show 100A continuous drain current at Tc when the FDMS0308AS shows 49A?

A: The CSD17505Q5A achieves higher current capacity at Tc through superior thermal design and die characteristics. However, at Ta (ambient temperature), both devices are rated for 24A continuous drain current. The higher Tc rating indicates better performance under elevated case temperature conditions. Selection depends on the specific thermal environment and current profile of the application.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The FDMS0308AS, FDMS8025S, BSZ0503NSIATMA1, CSD17505Q5A, and RS1E240GNTB are all RoHS3 compliant. All parts maintain MSL 1 (Unlimited) moisture sensitivity level.

Q: What package considerations apply when selecting a substitute?

A: The FDMS0308AS and FDMS8025S use identical 8-PQFN (5x6) packages. The BSZ0503NSIATMA1 uses PG-TSDSON-8-FL, the CSD17505Q5A uses 8-VSONP (5x6), and the RS1E240GNTB uses 8-HSOP. Package differences require PCB layout verification and may affect thermal performance. Consult device datasheets for pin configuration and thermal pad specifications.

Q: Which substitute part has the lowest gate charge?

A: The CSD17505Q5A has the lowest gate charge at 13 nC at 4.5V, compared to 47 nC for the FDMS0308AS at 10V. Lower gate charge reduces switching losses and driver power requirements in high-frequency applications.

Q: Can the RS1E240GNTB be used in place of the FDMS0308AS?

A: The RS1E240GNTB is suitable for applications where the 8-HSOP package is acceptable. Electrical specifications are similar with 24A continuous drain current at Ta and 3.3mOhm on-resistance. However, the different package requires PCB layout changes and thermal pad verification.

Q: What is the inventory status of substitute parts?

A: FDMS8025S has 20,100 pieces in stock, CSD17505Q5A has 19,705 pieces, RS1E240GNTB has 15,933 pieces, and BSZ0503NSIATMA1 has 5,100 pieces. The FDMS0308AS has 38,196 pieces in stock.