FDMS0302S N-Channel 30V 29A/49A MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS0302S is an N-Channel 30V MOSFET manufactured by onsemi, featuring continuous drain current ratings of 29A (Ta) and 49A (Tc) in an 8-PQFN (5x6) surface mount package. This device is part of the PowerTrench® and SyncFET™ series and is currently classified as obsolete. Due to its obsolete status, equivalent substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance parameters.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	29	A
Continuous Drain Current @ 25°C (Tc)	49	A
Rds On (Max) @ 28A, 10V	1.9	mOhm
Gate Charge (Qg) @ 10V	109	nC
Input Capacitance (Ciss) @ 15V	7350	pF
Power Dissipation (Ta)	2.5	W
Power Dissipation (Tc)	89	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	-
Package	8-PQFN (5x6)	-
RoHS Status	ROHS3 Compliant	-
MSL Rating	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution eligibility for the FDMS0302S is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal or exceed 30V
Continuous drain current must meet or exceed 29A at Ta (25°C ambient)
On-resistance (Rds On) characteristics must support equivalent or superior performance at specified gate voltage and current conditions
Gate charge and input capacitance must be compatible with existing drive circuitry

Mechanical and Thermal Criteria:

Surface mount technology required
Operating temperature range must encompass -55°C to 150°C
Thermal performance (power dissipation) must support application requirements

Compliance and Certification:

RoHS3 compliance required
MSL rating of 1 (Unlimited) required
REACH unaffected status required

The substitute parts CSD17575Q3T, RS1E280BNTB, and RS1E280GNTB satisfy these criteria while offering active product status and improved availability compared to the obsolete FDMS0302S.

Parameter Comparison

Parameter	FDMS0302S (onsemi)	CSD17575Q3T (TI)	RS1E280BNTB (Rohm)	RS1E280GNTB (Rohm)
Vdss (V)	30	30	30	30
Id @ 25°C Ta (A)	29	60	28	28
Id @ 25°C Tc (A)	49	-	80	80
Rds On (Max) @ 10V (mOhm)	1.9 @ 28A	2.3 @ 25A	2.3 @ 28A	2.6 @ 28A
Gate Charge @ 10V (nC)	109	30	94	36
Ciss @ 15V (pF)	7350	4420	5100	2300
Power Dissipation Ta (W)	2.5	2.8	3	3
Power Dissipation Tc (W)	89	108	30	31
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-PQFN (5x6)	8-VSON-CLIP (3.3x3.3)	8-HSOP	8-HSOP
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

CSD17575Q3T (Texas Instruments NexFET™ Series)

The CSD17575Q3T is an active product offering superior continuous drain current (60A Ta) and reduced gate charge (30 nC @ 4.5V) compared to the FDMS0302S. This device provides enhanced performance headroom for applications requiring higher current capacity. The 8-VSON-CLIP package (3.3x3.3) differs from the original 8-PQFN footprint and requires PCB layout modification. All compliance certifications (ROHS3, MSL 1, REACH unaffected) are maintained. This substitute is suitable for designs where package redesign is acceptable and improved thermal performance is beneficial.

RS1E280BNTB (Rohm Semiconductor)

The RS1E280BNTB is an active product with continuous drain current of 28A (Ta), closely matching the FDMS0302S specification of 29A. On-resistance is 2.3 mOhm @ 28A, 10V, providing equivalent performance to the original device. The 8-HSOP package differs from the original 8-PQFN footprint and requires PCB layout modification. Gate charge (94 nC @ 10V) and input capacitance (5100 pF @ 15V) are comparable to the original. All compliance certifications are maintained. This substitute is suitable for applications where current rating equivalence and active product status are prioritized.

RS1E280GNTB (Rohm Semiconductor)

The RS1E280GNTB is an active product with continuous drain current of 28A (Ta), matching the FDMS0302S specification. This variant features reduced gate charge (36 nC @ 10V) and significantly lower input capacitance (2300 pF @ 15V) compared to the original device, resulting in improved switching characteristics and reduced drive requirements. The 8-HSOP package differs from the original 8-PQFN footprint and requires PCB layout modification. Tape & Reel packaging is available. All compliance certifications are maintained. This substitute is suitable for applications prioritizing reduced gate charge and lower input capacitance with active product availability.

Frequently Asked Questions (FAQ)

Q: Can the CSD17575Q3T directly replace the FDMS0302S without PCB modifications?

A: No. The CSD17575Q3T uses an 8-VSON-CLIP (3.3x3.3) package, while the FDMS0302S uses an 8-PQFN (5x6) package. PCB layout and footprint modifications are required. Pin configuration must be verified against device datasheets before implementation.

Q: What is the primary advantage of the RS1E280GNTB over the RS1E280BNTB?

A: The RS1E280GNTB features significantly lower gate charge (36 nC vs. 94 nC @ 10V) and reduced input capacitance (2300 pF vs. 5100 pF @ 15V). These characteristics result in faster switching response and reduced driver power requirements. Both devices maintain equivalent continuous drain current (28A Ta) and on-resistance specifications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The CSD17575Q3T, RS1E280BNTB, and RS1E280GNTB are all ROHS3 compliant with MSL rating 1 (Unlimited) and REACH unaffected status, matching the compliance profile of the FDMS0302S.

Q: Which substitute part offers the highest continuous drain current?

A: The CSD17575Q3T offers the highest continuous drain current at 60A (Ta), compared to 29A (Ta) for the FDMS0302S and 28A (Ta) for both Rohm devices. This provides additional performance margin for high-current applications.

Q: What is the impact of different package types on thermal performance?

A: Package geometry affects thermal dissipation characteristics. The 8-VSON-CLIP (3.3x3.3) package of the CSD17575Q3T provides superior thermal performance (108W Tc) compared to the 8-HSOP packages of the Rohm devices (30-31W Tc). Application thermal requirements must be evaluated against package thermal specifications.

Q: Can the FDMS0302S be sourced as a new component?

A: No. The FDMS0302S is classified as obsolete. While 2597 pieces are currently in stock, long-term availability is not guaranteed. Active substitute parts (CSD17575Q3T, RS1E280BNTB, RS1E280GNTB) are recommended for new designs and ongoing production.

Q: Are gate charge differences significant for driver circuit design?

A: Yes. Gate charge varies significantly among substitutes: FDMS0302S (109 nC @ 10V), CSD17575Q3T (30 nC @ 4.5V), RS1E280BNTB (94 nC @ 10V), and RS1E280GNTB (36 nC @ 10V). Lower gate charge reduces driver power dissipation and enables faster switching. Existing driver circuits must be evaluated for compatibility with substitute gate charge specifications.

Q: What packaging options are available for the substitute parts?

A: CSD17575Q3T is available in Cut Tape (CT) and Digi-Reel® packaging. RS1E280BNTB is available in Cut Tape (CT) and Digi-Reel® packaging. RS1E280GNTB is available in Tape & Reel (TR) packaging. Packaging selection depends on production volume and assembly requirements.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message