FDMS0300S N-Channel 30V MOSFET Equivalent & Substitute Parts

Part Overview

The FDMS0300S is an N-Channel 30V MOSFET manufactured by onsemi, utilizing PowerTrench® and SyncFET™ technology. This surface mount device is rated for 31A continuous drain current (Ta) and 49A (Tc) in an 8-PQFN (5x6) package. The part is Active status and RoHS3 compliant with unlimited moisture sensitivity level (MSL 1). Equivalent and substitute parts are identified based on matching voltage ratings, drain current specifications, on-resistance characteristics, and surface mount packaging compatibility.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	31	A
Continuous Drain Current @ 25°C (Tc)	49	A
Rds On (Max) @ 30A, 10V	1.8	mOhm
Gate Charge (Qg) @ 10V	133	nC
Input Capacitance (Ciss) @ 15V	8705	pF
Power Dissipation (Ta)	2.5	W
Power Dissipation (Tc)	96	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-PQFN (5x6)	Surface Mount
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the FDMS0300S are qualified based on the following electrical and mechanical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 30V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)
Mounting Type: Surface Mount (exact match required)
Continuous Drain Current: 31A minimum (Ta rating)
On-Resistance (Rds On): 1.8mOhm or lower @ 10V gate drive
Gate Charge (Qg): 133nC or lower @ 10V
Operating Temperature: -55°C minimum to 150°C minimum
RoHS3 Compliance: Required
MSL Rating: 1 (Unlimited) preferred

Secondary Compatibility Factors:

Package footprint compatibility (8-pin configurations)
Gate threshold voltage (Vgs(th)): 2V to 3V range
Maximum gate voltage (Vgs): ±16V or higher
Input capacitance (Ciss): 8705pF or lower

All substitute parts listed maintain electrical equivalence within the specified parameter ranges and are suitable for direct replacement in applications where the FDMS0300S is currently specified.

Parameter Comparison

Parameter	FDMS0300S (onsemi)	DMT31M6LPS-13 (Diodes)	DMTH3002LPS-13 (Diodes)	RS1E350BNTB (Rohm)
Manufacturer	onsemi	Diodes Incorporated	Diodes Incorporated	Rohm Semiconductor
Vdss (V)	30	30	30	30
Id @ 25°C Ta (A)	31	35.8	N/A	35
Id @ 25°C Tc (A)	49	N/A	100	80
Rds On (Max) @ 10V (mOhm)	1.8 @ 30A	1.35 @ 20A	1.6 @ 25A	1.7 @ 35A
Vgs(th) (V)	3 @ 1mA	3 @ 250µA	2 @ 1mA	2.5 @ 1mA
Gate Charge Qg @ 10V (nC)	133	123	77	185
Ciss @ 15V (pF)	8705	7019	5000	7900
Vgs (Max) (V)	±20	±20	±16	±20
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 175	-55 to 150
Package	8-PQFN (5x6)	PowerDI5060-8 (Type K)	PowerDI5060-8	8-HSOP
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
AEC-Q101 Qualified	No	Yes	Yes	No
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

DMT31M6LPS-13 (Diodes Incorporated)

This substitute provides improved on-resistance performance (1.35mOhm vs. 1.8mOhm) at comparable gate drive conditions. The part meets all primary electrical matching criteria with 35.8A continuous drain current (Ta), exceeding the FDMS0300S specification. Gate charge is lower (123nC vs. 133nC), resulting in reduced switching losses. The device carries AEC-Q101 automotive qualification and is RoHS3 compliant. Package footprint differs (PowerDI5060-8 Type K vs. 8-PQFN), requiring PCB layout verification. Suitable for applications requiring automotive-grade reliability.

DMTH3002LPS-13 (Diodes Incorporated)

This substitute offers significantly higher current capability (100A Tc) and lower gate charge (77nC), providing enhanced performance margin for high-current applications. On-resistance is 1.6mOhm at 25A, 10V. The device supports extended operating temperature to 175°C and carries AEC-Q101 qualification. Input capacitance is substantially lower (5000pF vs. 8705pF), reducing gate drive requirements. Maximum gate voltage is ±16V (vs. ±20V), which may be a constraint in certain drive circuits. Package footprint differs (PowerDI5060-8 vs. 8-PQFN), requiring PCB layout verification. Recommended for high-current, automotive-qualified applications.

RS1E350BNTB (Rohm Semiconductor)

This substitute provides 35A continuous drain current (Ta) and 80A (Tc), meeting current requirements with performance margin. On-resistance is 1.7mOhm at 35A, 10V, comparable to the FDMS0300S. Gate charge is higher (185nC vs. 133nC), resulting in increased switching losses. Input capacitance is 7900pF, slightly lower than the main part. The device is RoHS3 compliant and operates to 150°C. Package footprint differs (8-HSOP vs. 8-PQFN), requiring PCB layout verification. Suitable for general-purpose applications where automotive qualification is not required.

Frequently Asked Questions (FAQ)

Q: Can the DMT31M6LPS-13 be used as a direct replacement for the FDMS0300S?

A: Electrical substitution is valid based on matching Vdss (30V), FET type (N-Channel), and exceeding current specifications (35.8A vs. 31A Ta). However, package footprint differs (PowerDI5060-8 Type K vs. 8-PQFN 5x6), requiring PCB layout redesign. Pin configuration and thermal characteristics must be verified against the application schematic.

Q: What is the primary advantage of the DMTH3002LPS-13 over the FDMS0300S?

A: The DMTH3002LPS-13 provides significantly higher current capability (100A Tc vs. 49A Tc), lower gate charge (77nC vs. 133nC), and extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C). These characteristics reduce switching losses and provide thermal margin in high-current applications. AEC-Q101 qualification adds automotive reliability assurance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (DMT31M6LPS-13, DMTH3002LPS-13, and RS1E350BNTB) are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, matching the FDMS0300S compliance profile.

Q: Which substitute part has the lowest on-resistance?

A: The DMT31M6LPS-13 has the lowest on-resistance at 1.35mOhm (measured @ 20A, 10V), compared to 1.8mOhm for the FDMS0300S (@ 30A, 10V). Lower on-resistance reduces conduction losses in switching applications.

Q: Do the substitute parts require different gate drive voltage?

A: All substitute parts operate with 10V gate drive voltage, matching the FDMS0300S specification. Maximum gate voltage ratings vary: FDMS0300S, DMT31M6LPS-13, and RS1E350BNTB support ±20V; DMTH3002LPS-13 supports ±16V. Verify gate drive circuit compliance with the selected substitute.

Q: What package considerations apply when substituting these parts?

A: The FDMS0300S uses 8-PQFN (5x6) packaging. Substitute parts use different packages: DMT31M6LPS-13 (PowerDI5060-8 Type K), DMTH3002LPS-13 (PowerDI5060-8), and RS1E350BNTB (8-HSOP). PCB footprint, thermal via placement, and board layout must be redesigned for each substitute. Consult manufacturer datasheets for package dimensions and thermal specifications.

Q: Are the substitute parts suitable for automotive applications?

A: DMT31M6LPS-13 and DMTH3002LPS-13 carry AEC-Q101 automotive qualification. RS1E350BNTB does not list AEC-Q101 qualification. The FDMS0300S does not carry automotive qualification. Application requirements determine whether automotive-grade parts are necessary.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the FET. Lower gate charge reduces switching losses and allows faster switching speeds. DMTH3002LPS-13 has the lowest gate charge (77nC), followed by DMT31M6LPS-13 (123nC), FDMS0300S (133nC), and RS1E350BNTB (185nC). Applications with high switching frequency benefit from lower gate charge specifications.

Q: Can input capacitance differences impact gate drive design?

A: Yes. Input capacitance (Ciss) affects gate drive current requirements and switching speed. DMTH3002LPS-13 has the lowest Ciss (5000pF), reducing gate drive current demand. FDMS0300S has the highest Ciss (8705pF). Gate drive circuits must be verified for compatibility with the selected substitute's capacitance characteristics.

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