FDMJ1023PZ Equivalent & Substitute Parts

Part Overview

The FDMJ1023PZ is a dual P-channel MOSFET array manufactured by onsemi, rated for 20V drain-to-source voltage with 2.9A continuous drain current. This device is packaged in a 6-WFDFN exposed pad configuration (SC-75, MicroFET) and is designed for surface mount applications requiring logic level gate control. The FDMJ1023PZ is classified as obsolete, making identification of equivalent substitute components necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating potential package variations.

Key Parameters

Parameter	Value	Unit
Configuration	2 P-Channel (Dual)	—
Drain to Source Voltage (Vdss)	20	V
Current - Continuous Drain (Id) @ 25°C	2.9	A
Rds On (Max) @ Id, Vgs	112 mOhm @ 2.9A, 4.5V	—
Vgs(th) (Max) @ Id	1 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	6.5 @ 4.5V	nC
Input Capacitance (Ciss) (Max) @ Vds	400 @ 10V	pF
Power - Max	700	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	6-WFDFN Exposed Pad	—
FET Feature	Logic Level Gate	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the FDMJ1023PZ are selected based on strict electrical and mechanical compatibility criteria. The following parameters define acceptable substitution:

Critical Matching Parameters:

Dual P-channel MOSFET configuration
Minimum 20V Vdss rating
Continuous drain current rating of 2.9A or greater
Logic level gate operation
Surface mount technology
Operating temperature range of -55°C to 150°C (TJ)

Acceptable Variation Parameters:

Rds On values lower than the original specification indicate improved performance
Gate charge and input capacitance variations are acceptable provided they do not exceed the original values by more than 50%
Maximum power dissipation may differ due to package thermal characteristics
Package form factor may vary (6-WFDFN to 6-UFDFN) provided pinout compatibility is maintained

The identified substitute parts PMDPB58UPE,115 and PMDPB85UPE,115 meet all critical matching parameters and are manufactured by Nexperia USA Inc. Both parts are active products with current availability, addressing the obsolescence status of the original FDMJ1023PZ.

Parameter Comparison

Parameter	FDMJ1023PZ (onsemi)	PMDPB58UPE,115 (Nexperia)	PMDPB85UPE,115 (Nexperia)
Configuration	2 P-Channel (Dual)	2 P-Channel (Dual)	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V	20V	20V
Current - Continuous Drain (Id) @ 25°C	2.9A	3.6A	2.9A
Rds On (Max) @ Id, Vgs	112 mOhm @ 2.9A, 4.5V	67 mOhm @ 2A, 4.5V	103 mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA	950 mV @ 250µA	950 mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.5 nC @ 4.5V	9.5 nC @ 4.5V	8.1 nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 10V	804 pF @ 10V	514 pF @ 10V
Power - Max	700 mW	515 mW	515 mW
Operating Temperature Range	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	6-WFDFN Exposed Pad	6-UFDFN Exposed Pad	6-UFDFN Exposed Pad
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Product Status	Obsolete	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

PMDPB85UPE,115 (Primary Substitute)

The PMDPB85UPE,115 is the closest electrical equivalent to the FDMJ1023PZ. This part maintains identical continuous drain current (2.9A) and Vdss rating (20V), ensuring direct functional compatibility. The Rds On specification (103 mOhm @ 1.3A, 4.5V) is within acceptable tolerance of the original (112 mOhm @ 2.9A, 4.5V). The PMDPB85UPE,115 is an active product with current manufacturing status and ROHS3 compliance, providing long-term supply assurance. The 6-UFDFN package is mechanically compatible with the original 6-WFDFN configuration for surface mount applications.

PMDPB58UPE,115 (Secondary Substitute)

The PMDPB58UPE,115 offers enhanced performance characteristics with higher continuous drain current (3.6A) and lower Rds On (67 mOhm @ 2A, 4.5V), making it suitable for applications requiring improved current handling or reduced on-resistance. This part is also an active product with ROHS3 compliance. The increased gate charge (9.5 nC) and input capacitance (804 pF) may impact switching speed in timing-sensitive applications. Selection of this part is appropriate when thermal or current margin improvements are required.

Both substitute parts are manufactured by Nexperia USA Inc., an active supplier with established quality and compliance certifications. The transition from the obsolete FDMJ1023PZ to either substitute part requires verification of PCB layout compatibility with the 6-UFDFN package footprint.

Frequently Asked Questions (FAQ)

Q: Can PMDPB85UPE,115 directly replace FDMJ1023PZ without PCB modifications?

A: Electrical compatibility is confirmed across all critical parameters. However, the package transition from 6-WFDFN to 6-UFDFN requires PCB footprint verification. Both packages are 6-pin exposed pad configurations with identical pinout, but physical dimensions differ. PCB layout review is necessary to confirm pad spacing and thermal via compatibility.

Q: What is the difference between PMDPB58UPE,115 and PMDPB85UPE,115?

A: Both parts are dual P-channel MOSFETs with 20V Vdss rating. The PMDPB58UPE,115 provides higher continuous drain current (3.6A vs. 2.9A) and lower on-resistance (67 mOhm vs. 103 mOhm). The PMDPB85UPE,115 maintains the exact current rating of the original FDMJ1023PZ. Selection depends on whether improved performance margins are required for the application.

Q: Are the Nexperia parts RoHS compliant?

A: Yes, both PMDPB58UPE,115 and PMDPB85UPE,115 are ROHS3 compliant. The original FDMJ1023PZ RoHS status was not specified in the available documentation.

Q: How do gate charge differences affect circuit performance?

A: The PMDPB85UPE,115 gate charge (8.1 nC) is slightly higher than the original (6.5 nC), while PMDPB58UPE,115 is higher (9.5 nC). Increased gate charge results in longer switching times and higher gate drive power requirements. For applications with tight switching frequency specifications, circuit simulation or bench testing is recommended to confirm performance margins.

Q: What is the significance of the input capacitance (Ciss) variation?

A: The PMDPB85UPE,115 input capacitance (514 pF) is higher than the original (400 pF), while PMDPB58UPE,115 is significantly higher (804 pF). Higher input capacitance increases gate drive current requirements and may affect switching speed. Applications with frequency-dependent performance should evaluate this parameter against circuit design margins.

Q: Are both substitute parts available in the same packaging format?

A: Both PMDPB58UPE,115 and PMDPB85UPE,115 are supplied in Tape & Reel (TR) format. The original FDMJ1023PZ packaging format was not specified. Confirm reel specifications and handling requirements with the supplier for production integration.

Q: What is the thermal performance difference between the original and substitute parts?

A: The original FDMJ1023PZ maximum power dissipation is 700 mW, while both Nexperia substitutes are rated at 515 mW. This difference reflects package thermal characteristics rather than device performance. Thermal management design should account for the lower power rating of the substitute parts.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message