FDMD8280 Equivalent & Substitute Parts

Part Overview

The FDMD8280 is a dual N-channel MOSFET array manufactured by onsemi, designed for surface mount applications requiring 80V drain-to-source voltage capability with 11A continuous drain current. The device is housed in a 12-PowerWDFN package and operates across a temperature range of -55°C to 150°C.

The FDMD8280 is classified as obsolete product status. Identification of equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

FDMD8280
onsemiIn Stock: 3967FDMD8280 Datasheet
FDMD8280
Current Part
NTMFD6H846NLT1G
onsemiIn Stock: 1906NTMFD6H846NLT1G Datasheet
NTMFD6H846NLT1G
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 11 A
Rds On (Max) @ Id, Vgs 8.2 mOhm @ 11A, 10V mOhm
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3050 pF @ 40V
Power - Max 1 W
Operating Temperature Range -55 to 150 °C (TJ)
Configuration 2 N-Channel (Dual) -
Package / Case 12-PowerWDFN -
Technology MOSFET (Metal Oxide) -

Substitute Part Grouping Explanation

Substitution of the FDMD8280 is evaluated based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain the 80V Vdss specification to ensure safe operation within the same voltage domain.

Current Handling Capability: The substitute must support continuous drain current at or above the 11A specification at 25°C ambient conditions.

On-Resistance (Rds On): The substitute's on-resistance must not exceed the original specification to maintain thermal performance and power dissipation characteristics.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitutes with lower gate charge and input capacitance values represent improved performance characteristics.

Configuration: The substitute must maintain dual N-channel configuration to preserve circuit topology compatibility.

Temperature Range: The substitute must support the operating temperature range of -55°C to 150°C or exceed it.

Compliance and Certifications: Both parts must maintain RoHS3 compliance, REACH unaffected status, and identical moisture sensitivity levels.

The NTMFD6H846NLT1G qualifies as a substitute based on matching voltage rating, exceeding current capability, and maintaining all compliance requirements, despite differences in package form factor and thermal characteristics.

Parameter Comparison

Parameter FDMD8280 NTMFD6H846NLT1G Unit
Manufacturer onsemi onsemi -
Drain to Source Voltage (Vdss) 80 80 V
Current - Continuous Drain (Id) @ 25°C 11 9.4 (Ta) A
Rds On (Max) @ Id, Vgs 8.2 mOhm @ 11A, 10V 15 mOhm @ 5A, 10V mOhm
Vgs(th) (Max) @ Id 4 @ 250µA 2 @ 21µA V
Gate Charge (Qg) (Max) @ Vgs 44 @ 10V 17 @ 10V nC
Input Capacitance (Ciss) (Max) @ Vds 3050 @ 40V 900 @ 40V pF
Power - Max 1 3.2 (Ta) W
Operating Temperature Range -55 to 150 -55 to 175 °C (TJ)
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual) -
Mounting Type Surface Mount Surface Mount -
Package / Case 12-PowerWDFN 8-PowerTDFN -
Product Status Obsolete Active -
RoHS Status ROHS3 Compliant ROHS3 Compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) -
REACH Status REACH Unaffected REACH Unaffected -

Engineering Selection Recommendations

The NTMFD6H846NLT1G is identified as the manufacturer-recommended substitute for the obsolete FDMD8280. Both devices are manufactured by onsemi and maintain identical compliance certifications including RoHS3 compliance, REACH unaffected status, and MSL Level 1 rating.

Product Status Consideration: The FDMD8280 is classified as obsolete, while the NTMFD6H846NLT1G maintains active product status. This distinction ensures long-term availability and continued manufacturing support for the substitute part.

Electrical Compatibility: Both parts share the same 80V Vdss rating and dual N-channel configuration. The NTMFD6H846NLT1G demonstrates improved switching characteristics with reduced gate charge (17 nC versus 44 nC) and significantly lower input capacitance (900 pF versus 3050 pF), resulting in faster switching performance and reduced gate drive power requirements.

Current Rating Differential: The FDMD8280 specifies 11A continuous drain current, while the NTMFD6H846NLT1G specifies 9.4A at Ta (ambient temperature). Applications operating at or below 9.4A continuous current at 25°C ambient conditions are directly compatible. Applications requiring the full 11A capability must evaluate thermal management and duty cycle characteristics.

Temperature Range Extension: The NTMFD6H846NLT1G extends the maximum operating temperature to 175°C compared to the FDMD8280's 150°C limit, providing additional thermal margin in high-temperature applications.

Package Form Factor Change: The substitution involves a package change from 12-PowerWDFN to 8-PowerTDFN (5x6). PCB layout modifications are required to accommodate the different package footprint and pin configuration.

Frequently Asked Questions (FAQ)

Q: Can the NTMFD6H846NLT1G directly replace the FDMD8280 in existing designs?

A: Direct replacement requires evaluation of current requirements and PCB layout compatibility. The NTMFD6H846NLT1G supports 9.4A continuous drain current at ambient temperature, compared to the FDMD8280's 11A specification. Applications operating below 9.4A are electrically compatible. The package change from 12-PowerWDFN to 8-PowerTDFN requires PCB redesign.

Q: What are the key electrical differences between these two parts?

A: Both parts maintain 80V Vdss rating and dual N-channel configuration. The NTMFD6H846NLT1G features improved switching performance with 61% lower gate charge (17 nC versus 44 nC) and 71% lower input capacitance (900 pF versus 3050 pF). The NTMFD6H846NLT1G also extends operating temperature range to 175°C and increases maximum power dissipation to 3.2W at ambient temperature.

Q: Are there compliance or certification differences between these parts?

A: Both parts maintain identical compliance status: RoHS3 compliant, REACH unaffected, and MSL Level 1 (unlimited moisture sensitivity). No compliance barriers exist for substitution.

Q: What package considerations apply to this substitution?

A: The FDMD8280 uses a 12-PowerWDFN package while the NTMFD6H846NLT1G uses an 8-PowerTDFN (5x6) package. These packages have different footprints, pin counts, and pin configurations. PCB layout redesign is mandatory for this substitution.

Q: How does the on-resistance comparison affect circuit performance?

A: The FDMD8280 specifies 8.2 mOhm at 11A and 10V gate-source voltage. The NTMFD6H846NLT1G specifies 15 mOhm at 5A and 10V gate-source voltage. On-resistance values are measured at different current levels, making direct comparison dependent on actual operating current. At lower current levels, the NTMFD6H846NLT1G may exhibit lower on-resistance due to its improved device characteristics.

Q: What is the product status significance for this substitution?

A: The FDMD8280 is classified as obsolete, indicating discontinued manufacturing and limited future availability. The NTMFD6H846NLT1G maintains active product status, ensuring continued manufacturing support, availability, and technical documentation updates.

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