FDMD8260LET60 Equivalent & Substitute Parts

Part Overview

The FDMD8260LET60 is a dual N-channel MOSFET array manufactured by onsemi, designed for surface mount applications requiring 60V drain-to-source voltage capability and 15A continuous drain current. This device is classified as obsolete, necessitating identification of active alternative components that maintain electrical and mechanical compatibility for ongoing production and replacement applications.

Substiute Parts

FDMD8260LET60

onsemiIn Stock: 813FDMD8260LET60 Datasheet

Current PartRFQ

NTTFD9D0N06HLTWG

onsemiIn Stock: 3682NTTFD9D0N06HLTWG Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the obsolete FDMD8260LET60 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must maintain a Drain to Source Voltage (Vdss) of 60V to ensure safe operation within the original circuit design envelope.

Configuration Requirement: The substitute must be a dual N-channel MOSFET array to match the original functional architecture.

Surface Mount Technology: The substitute must utilize surface mount packaging to maintain PCB assembly compatibility.

Regulatory Compliance: The substitute must maintain ROHS3 compliance and REACH unaffected status to satisfy current manufacturing and environmental standards.

Continuous Current Capability: While the original part specifies 15A continuous drain current, substitute parts with equal or greater current ratings at the specified temperature conditions are acceptable.

On-Resistance (Rds On): The substitute must demonstrate acceptable on-resistance characteristics to ensure thermal and power dissipation performance within circuit requirements.

The NTTFD9D0N06HLTWG meets these substitution criteria through equivalent voltage rating, dual N-channel configuration, surface mount technology, and active product status with full regulatory compliance.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The FDMD8260LET60 is classified as obsolete. The NTTFD9D0N06HLTWG is an active product with current manufacturing availability, making it the appropriate selection for new designs and ongoing production requirements.

Regulatory Compliance: Both components maintain ROHS3 compliance and REACH unaffected status, satisfying current environmental and regulatory requirements for electronic component procurement.

Electrical Equivalence: Both devices share identical 60V Vdss ratings and dual N-channel configuration, establishing functional compatibility at the circuit level. The substitute part demonstrates lower gate charge (13.5nC versus 68nC) and reduced input capacitance (948pF versus 5245pF), resulting in improved switching performance characteristics.

Package Consideration: The substitute part utilizes a 12-WQFN (3.3x3.3) package versus the original 12-PowerWDFN (12-Power3.3x5) package. PCB layout modifications are required to accommodate the different package footprint and pin configuration. Design validation is necessary to confirm mechanical and electrical compatibility within the target application.

Thermal Performance: The substitute part offers enhanced thermal performance under controlled conditions (26W at Tc versus 1.1W at Ta), providing improved power dissipation capability in thermally managed applications.

Frequently Asked Questions (FAQ)

Q: Can the NTTFD9D0N06HLTWG directly replace the FDMD8260LET60 without PCB modifications?

A: No. While both devices are dual N-channel MOSFETs with 60V ratings, the package footprints differ. The FDMD8260LET60 uses a 12-PowerWDFN (12-Power3.3x5) package, while the NTTFD9D0N06HLTWG uses a 12-WQFN (3.3x3.3) package. PCB layout redesign is required to accommodate the different pin arrangement and package dimensions.

Q: Are the electrical characteristics compatible between these two parts?

A: Both parts maintain the same 60V Vdss rating and dual N-channel configuration, establishing functional compatibility. However, the substitute part exhibits different on-resistance, gate charge, and input capacitance values. Circuit performance characteristics such as switching speed and thermal behavior will differ. Application-specific validation is necessary.

Q: What is the continuous drain current rating difference between these parts?

A: The FDMD8260LET60 specifies 15A continuous drain current at 25°C. The NTTFD9D0N06HLTWG specifies 9A at ambient temperature (Ta) and 38A at case temperature (Tc). The substitute part's current rating depends on thermal management conditions within the application.

Q: Do both parts meet current environmental compliance standards?

A: Yes. Both the FDMD8260LET60 and NTTFD9D0N06HLTWG are ROHS3 compliant and REACH unaffected, satisfying current environmental and regulatory requirements for electronic component procurement and manufacturing.

Q: What is the maximum operating temperature difference between these parts?

A: The FDMD8260LET60 operates from -55°C to 175°C (TJ), while the NTTFD9D0N06HLTWG operates from -55°C to 150°C (TJ). Applications requiring operation above 150°C junction temperature cannot use the substitute part.

Q: How do the gate charge characteristics compare?

A: The FDMD8260LET60 has a maximum gate charge of 68nC at 10V, while the NTTFD9D0N06HLTWG has a maximum gate charge of 13.5nC at 10V. The lower gate charge of the substitute part results in faster switching transitions and reduced gate drive power requirements.

Q: Is the substitute part available in the same packaging format?

A: No. The FDMD8260LET60 is supplied in standard packaging, while the NTTFD9D0N06HLTWG is available in Tape & Reel (TR) format. Procurement and assembly processes may require adjustment to accommodate the different packaging format.