FDMC8884 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMC8884 is an N-Channel 30V MOSFET manufactured by onsemi in the PowerTrench® series. This device is rated for 9A continuous drain current (Ta) and 15A (Tc) with a maximum drain-to-source voltage of 30V. The part is housed in an 8-MLP (3.3x3.3) surface mount package and features a maximum on-resistance of 19mOhm at 9A, 10V gate-source voltage.

The FDMC8884 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and legacy system support. Substitute devices must maintain compatibility across critical electrical parameters including voltage rating, continuous drain current, on-resistance characteristics, and thermal performance specifications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 15A (Tc)	A
Rds On (Max) @ Id, Vgs	19mOhm @ 9A, 10V	mOhm
Vgs(th) (Max) @ Id	2.5V @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	685 pF @ 15V	pF
Power Dissipation (Max)	2.3W (Ta), 18W (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-PowerWDFN	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the FDMC8884 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a minimum drain-to-source voltage (Vdss) rating of 30V or higher to ensure safe operation within the original design envelope.

Continuous Drain Current: Substitute parts must support a minimum continuous drain current of 9A at Ta (ambient temperature) to meet or exceed the original device performance. Parts with higher current ratings (such as 18A or 40A) are acceptable as they provide design margin.

On-Resistance (Rds On): The maximum on-resistance specification at rated gate-source voltage (10V) must not exceed 21mOhm to maintain thermal performance and power dissipation characteristics within acceptable limits.

Gate Threshold Voltage (Vgs(th)): Threshold voltage must remain within the range of 1.8V to 2.5V at the specified test current to ensure compatible gate drive requirements.

Package and Mounting: All substitute parts must be surface mount devices in 8-pin configurations (8-MLP, 8-PowerVDFN, 8-PowerTDFN, or equivalent) to maintain PCB layout compatibility.

Operating Temperature Range: All substitute parts must support the full operating temperature range of -55°C to 150°C (TJ).

Moisture Sensitivity: All substitute parts must maintain MSL 1 (Unlimited) classification for handling and storage compatibility.

Parameter Comparison

Parameter	FDMC8884 (onsemi)	BSZ040N04LSGATMA1 (Infineon)	DMN3018SFG-13 (Diodes)	DMN3027LFG-13 (Diodes)	DMN3027LFG-7 (Diodes)	STL10N3LLH5 (STMicroelectronics)
Vdss (V)	30	40	30	30	30	30
Id @ 25°C (A)	9 (Ta), 15 (Tc)	18 (Ta), 40 (Tc)	8.5 (Ta)	5.3 (Ta)	5.3 (Ta)	9 (Tc)
Rds On (Max) @ 10V (mOhm)	19 @ 9A	4 @ 20A	21 @ 10A	18.6 @ 10A	18.6 @ 10A	19 @ 4.5A
Vgs(th) (Max) (V)	2.5 @ 250µA	2 @ 36µA	2.1 @ 250µA	1.8 @ 250µA	1.8 @ 250µA	2.5 @ 250µA
Qg (Max) @ 10V (nC)	14	64	13.2	11.3	11.3	6
Ciss (Max) @ Vds (pF)	685 @ 15V	5100 @ 20V	697 @ 15V	580 @ 15V	580 @ 15V	900 @ 25V
Power Dissipation (Max) (W)	2.3 (Ta), 18 (Tc)	2.1 (Ta), 69 (Tc)	1 (Ta)	1 (Ta)	1 (Ta)	2 (Ta), 50 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-PowerWDFN	8-PowerTDFN	8-PowerVDFN	8-PowerVDFN	8-PowerVDFN	8-PowerVDFN
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	REACH Unaffected	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

BSZ040N04LSGATMA1 (Infineon OptiMOS™): This device provides the highest performance margin with a 40V voltage rating and 18A continuous drain current (Ta). The 4mOhm on-resistance at 20A, 10V represents superior efficiency compared to the original FDMC8884. The BSZ040N04LSGATMA1 is ROHS3 compliant and maintains active product status. This part is suitable for applications requiring enhanced thermal performance and lower power dissipation. The higher gate charge (64nC) and input capacitance (5100pF) require verification of gate drive circuit compatibility.

DMN3018SFG-13 (Diodes Incorporated): This device maintains the 30V voltage rating with 8.5A continuous drain current (Ta), providing near-equivalent performance to the FDMC8884. The 21mOhm on-resistance at 10A, 10V is within acceptable limits. The DMN3018SFG-13 is ROHS3 compliant and maintains active product status. This part is suitable for direct replacement in applications with moderate current requirements. The lower power dissipation rating (1W Ta) indicates reduced thermal capability compared to the original device.

DMN3027LFG-13 and DMN3027LFG-7 (Diodes Incorporated): Both variants maintain the 30V voltage rating with 5.3A continuous drain current (Ta). The 18.6mOhm on-resistance at 10A, 10V provides improved efficiency. These devices are ROHS3 compliant and maintain active product status. These parts are suitable for applications with lower current requirements or where reduced on-resistance is beneficial. The lower gate charge (11.3nC) and input capacitance (580pF) provide faster switching characteristics. The DMN3027LFG-7 variant offers higher inventory availability (37,088 pcs).

STL10N3LLH5 (STMicroelectronics STripFET™ V): This device maintains the 30V voltage rating with 9A continuous drain current (Tc), matching the original FDMC8884 current specification. The 19mOhm on-resistance at 4.5A, 10V is equivalent to the original device. The STL10N3LLH5 is ROHS3 compliant and maintains active product status. This part provides the closest electrical equivalence to the FDMC8884. The significantly lower gate charge (6nC) enables faster switching and reduced gate drive power requirements. The higher input capacitance (900pF) requires gate drive circuit verification.

All substitute parts maintain MSL 1 (Unlimited) classification and operate across the full -55°C to 150°C temperature range. All parts are classified as REACH Unaffected and carry EAR99 ECCN designation.

Frequently Asked Questions (FAQ)

Q: Can the BSZ040N04LSGATMA1 be used as a direct replacement for the FDMC8884?

A: The BSZ040N04LSGATMA1 meets all critical electrical parameters with superior performance margins. The 40V voltage rating exceeds the 30V requirement, and the 18A continuous drain current (Ta) exceeds the 9A specification. However, the higher gate charge (64nC versus 14nC) and input capacitance (5100pF versus 685pF) require verification that the gate drive circuit can supply adequate current and voltage without exceeding maximum gate-source voltage limits.

Q: What is the difference between DMN3027LFG-13 and DMN3027LFG-7?

A: Both devices are electrically identical with matching voltage ratings (30V), continuous drain current (5.3A Ta), on-resistance (18.6mOhm @ 10A, 10V), and all other electrical specifications. The primary difference is packaging designation and inventory availability. The DMN3027LFG-7 variant has significantly higher stock availability (37,088 pcs versus 5,210 pcs).

Q: Is the STL10N3LLH5 suitable for high-frequency switching applications?

A: The STL10N3LLH5 features a significantly lower gate charge (6nC) compared to the FDMC8884 (14nC), enabling faster switching transitions and reduced switching losses. However, the higher input capacitance (900pF versus 685pF) may increase gate drive current requirements. The device is suitable for high-frequency applications provided the gate drive circuit is verified for compatibility with the capacitive load.

Q: Can substitute parts with lower continuous drain current ratings be used?

A: The DMN3027LFG-13 and DMN3027LFG-7 devices are rated for 5.3A continuous drain current (Ta), which is lower than the FDMC8884 specification of 9A (Ta). These devices are suitable only for applications where the actual circuit current requirement does not exceed 5.3A. Circuit analysis must confirm that the lower current rating does not compromise system performance or thermal margins.

Q: What are the package compatibility considerations?

A: The FDMC8884 uses an 8-PowerWDFN package. Substitute parts use 8-PowerVDFN, 8-PowerTDFN, or equivalent 8-pin surface mount packages. While these packages are physically similar in footprint dimensions (typically 3.3x3.3mm), pin assignments and thermal pad configurations may differ. PCB layout verification is required to confirm pad alignment and thermal performance before production implementation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (BSZ040N04LSGATMA1, DMN3018SFG-13, DMN3027LFG-13, DMN3027LFG-7, and STL10N3LLH5) are ROHS3 compliant. The original FDMC8884 is classified as REACH Unaffected. All parts maintain MSL 1 (Unlimited) moisture sensitivity classification.

Q: What is the impact of on-resistance differences on circuit performance?

A: The FDMC8884 specifies 19mOhm on-resistance at 9A, 10V. Substitute parts range from 4mOhm (BSZ040N04LSGATMA1) to 21mOhm (DMN3018SFG-13). Lower on-resistance reduces power dissipation and heat generation. Higher on-resistance increases power dissipation. Circuit thermal analysis must confirm that the selected substitute part's on-resistance does not exceed thermal design limits. Parts with lower on-resistance provide design margin and improved efficiency.

Q: How do gate charge differences affect circuit design?

A: The FDMC8884 specifies 14nC gate charge at 10V. Substitute parts range from 6nC (STL10N3LLH5) to 64nC (BSZ040N04LSGATMA1). Higher gate charge requires greater gate drive current and energy per switching cycle, increasing switching losses and gate driver power dissipation. Lower gate charge reduces gate drive requirements and switching losses. Gate driver circuit verification is required to confirm adequate current sourcing and sinking capability for the selected substitute part.

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