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FDMC8676 N-Channel 30V Power MOSFET Equivalent & Substitute Parts
Part Overview
The FDMC8676 is an N-Channel 30V power MOSFET manufactured by onsemi in the PowerTrench® series. This device is rated for 16A continuous drain current (Ta) and 18A (Tc) with a maximum drain-source voltage of 30V. The part is designed for surface mount applications in the Power33 package configuration.
The FDMC8676 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET topology.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current @ 25°C (Ta) | 16 | A |
| Continuous Drain Current @ 25°C (Tc) | 18 | A |
| On-Resistance (Rds On) @ 14.7A, 10V | 5.9 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 3 | V |
| Gate Charge (Qg) @ 10V | 30 | nC |
| Input Capacitance (Ciss) @ 15V | 1935 | pF |
| Power Dissipation (Ta) | 2.3 | W |
| Power Dissipation (Tc) | 41 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Mounting Type | Surface Mount | |
| Package Type | 8-PowerTDFN | |
| Moisture Sensitivity Level | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the FDMC8676 is determined by the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Drain-Source Voltage (Vdss): Must equal or exceed 30V
- Continuous Drain Current (Id @ Ta): Must meet or exceed 16A at 25°C ambient
- On-Resistance (Rds On): Lower values indicate improved performance; values within 5–8 mOhm range are functionally equivalent
- Gate Threshold Voltage (Vgs(th)): Must be compatible with 3V or lower for standard gate drive circuits
- Operating Temperature Range: Must support -55°C to 150°C minimum
Mechanical Compatibility Criteria:
- Mounting Type: Surface mount only
- Package Configuration: 8-pin power packages (PowerTDFN, PowerWDFN, TSDSON, VSONP, PowerDI5060, HSMT, PowerFlat)
- Pin Count: 8-pin configurations
- Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for supply chain consistency
Regulatory & Compliance Criteria:
- RoHS3 Compliance: Required for new designs
- REACH Status: REACH Unaffected
- ECCN Classification: EAR99
- Automotive Grade (AEC-Q101): Optional, available for specific applications
Substitute parts listed below meet these criteria within the specified parameter ranges and are available from active product lines or qualified alternatives.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ Ta (A) | Rds On (mOhm) | Vgs(th) (V) | Qg (nC) | Ciss (pF) | Package | Status |
|---|---|---|---|---|---|---|---|---|---|
| FDMC8676 | onsemi | 30 | 16 | 5.9 | 3 | 30 | 1935 | 8-PowerTDFN | Obsolete |
| FDMC7680 | onsemi | 30 | 14.8 | 7.2 | 3 | 42 | 2855 | 8-PowerWDFN | Active |
| BSZ050N03LSGATMA1 | Infineon Technologies | 30 | 16 | 5 | 2.2 | 35 | 2800 | 8-PowerTDFN | Active |
| BSZ088N03LSGATMA1 | Infineon Technologies | 30 | 12 | 8.8 | 2.2 | 21 | 1700 | 8-PowerTDFN | Not For New Designs |
| CSD17552Q3A | Texas Instruments | 30 | 15 | 6 | 1.9 | 12 | 2050 | 8-PowerVDFN | Active |
| CSD17578Q3A | Texas Instruments | 30 | 20 | 7.3 | 1.9 | 22.2 | 1590 | 8-PowerVDFN | Active |
| CSD17578Q3AT | Texas Instruments | 30 | 20 | 7.3 | 1.9 | 22.2 | 1590 | 8-PowerVDFN | Active |
| DMT3006LPS-13 | Diodes Incorporated | 30 | 16 | 6 | 3 | 22.6 | 1320 | 8-PowerTDFN | Active |
| RQ3E130BNTB | Rohm Semiconductor | 30 | 13 | 6 | 2.5 | 36 | 1900 | 8-PowerVDFN | Active |
| STL11N3LLH6 | STMicroelectronics | 30 | 11 | 7.5 | 1 | 17 | 1690 | 8-PowerVDFN | Active |
Engineering Selection Recommendations
Primary Substitutes (Recommended for New Designs):
BSZ050N03LSGATMA1 (Infineon Technologies OptiMOS™ series) is the preferred substitute. This part matches the FDMC8676 in drain-source voltage (30V) and continuous drain current (16A @ Ta). The on-resistance is superior at 5mOhm, and the device is RoHS3 compliant with active product status. The lower gate threshold voltage (2.2V) requires verification of gate drive circuit compatibility.
DMT3006LPS-13 (Diodes Incorporated) provides equivalent electrical performance with 16A continuous drain current and 6mOhm on-resistance. This part carries AEC-Q101 automotive qualification and is suitable for automotive-grade applications. The gate threshold voltage matches the original part at 3V, simplifying gate drive integration.
CSD17578Q3A / CSD17578Q3AT (Texas Instruments NexFET™ series) offer superior continuous drain current at 20A, exceeding the FDMC8676 specification. These parts are RoHS3 compliant and active. The higher current rating provides design margin for thermal management and reliability.
Secondary Substitutes (Limited Application):
FDMC7680 (onsemi) is an active alternative from the same manufacturer. The continuous drain current is reduced to 14.8A, which is below the original 16A specification. This part is suitable only for applications with reduced current requirements or where the 14.8A rating is acceptable.
RQ3E130BNTB (Rohm Semiconductor) provides 13A continuous drain current, which is below the original specification. This part is suitable for applications with lower current demands.
BSZ088N03LSGATMA1 (Infineon Technologies) carries a "Not For New Designs" status and should not be selected for new product development.
STL11N3LLH6 (STMicroelectronics) provides 11A continuous drain current, which is below the original specification and suitable only for reduced-current applications.
Frequently Asked Questions (FAQ)
Q: Can I use a substitute part with lower continuous drain current than the FDMC8676?
A: Substitution with lower current ratings (such as FDMC7680 at 14.8A, RQ3E130BNTB at 13A, or STL11N3LLH6 at 11A) is only acceptable if the application circuit operates below the substitute part's rated current. The original design must be re-evaluated to confirm that peak and continuous current demands do not exceed the substitute part's specification. Thermal analysis is required to validate safe operation.
Q: What is the impact of different gate threshold voltages on circuit compatibility?
A: The FDMC8676 has a gate threshold voltage of 3V. Substitute parts with lower Vgs(th) values (such as BSZ050N03LSGATMA1 at 2.2V or CSD17552Q3A at 1.9V) will turn on at lower gate voltages. This may require adjustment of gate drive circuits if the original design relies on the 3V threshold for timing or switching control. Parts with matching or higher Vgs(th) values (such as DMT3006LPS-13 at 3V) require no gate drive modification.
Q: Are all substitute parts RoHS3 compliant?
A: All substitute parts listed carry RoHS3 compliance status. The original FDMC8676 does not specify RoHS status. For applications requiring RoHS3 certification, all listed substitutes are acceptable from a compliance perspective.
Q: Can I use a substitute part with a different package type?
A: All substitute parts use 8-pin surface mount packages (PowerTDFN, PowerWDFN, TSDSON, VSONP, PowerDI5060, HSMT, or PowerFlat). While pin counts are identical, physical package dimensions and pin layouts differ. PCB layout modifications, including trace routing and thermal via placement, may be required. Mechanical fit verification is mandatory before production implementation.
Q: Which substitute part is best for automotive applications?
A: DMT3006LPS-13 (Diodes Incorporated) carries AEC-Q101 automotive qualification. This part is recommended for automotive-grade designs requiring formal qualification documentation. Other substitutes are industrial-grade and do not carry automotive certification.
Q: What is the difference between CSD17578Q3A and CSD17578Q3AT?
A: Both parts are electrically and functionally identical. The suffix "T" indicates a different tape and reel packaging configuration. Selection between these variants depends on supply chain availability and procurement requirements. Electrical performance and PCB compatibility are equivalent.
Q: How do I verify that a substitute part will work in my existing circuit?
A: Verification requires comparison of the following parameters: (1) Drain-source voltage rating must equal or exceed 30V; (2) Continuous drain current must meet or exceed the application's peak current demand; (3) Gate threshold voltage must be compatible with the gate drive circuit; (4) On-resistance must not cause excessive power dissipation or thermal issues; (5) Package pinout and physical dimensions must fit the PCB layout. Thermal simulation and functional testing are recommended before production release.
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