FDMC86183 Equivalent & Substitute Parts

Part Overview

The FDMC86183 is an N-Channel MOSFET rated for 100V drain-to-source voltage with 47A continuous drain current at 25°C (Tc). This device is manufactured by onsemi in an 8-PQFN (3.3x3.3) surface mount package and is classified as obsolete. Due to its obsolete product status, identification of equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Substiute Parts

FDMC86183

onsemiIn Stock: 1487FDMC86183 Datasheet

Current PartRFQ

NTTFS012N10MD

onsemiIn Stock: 1220NTTFS012N10MD Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDMC86183 is based on electrical and mechanical parameter alignment within the N-Channel MOSFET category. The primary substitution criteria are:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): 100V minimum
• Continuous Drain Current (Id) @ 25°C: 45A or greater (Tc rating)
• RDS(on) characteristics: Maximum on-resistance within acceptable operating range
• Gate Threshold Voltage (Vgs(th)): 4V maximum
• Operating Temperature Range: -55°C to 150°C (TJ)
• Package Type: 8-pin surface mount configuration (8-PQFN or 8-WDFN)
• Compliance: ROHS3 and MSL Level 1

The NTTFS012N10MD meets these criteria as an active product with equivalent voltage and current ratings, compatible thermal characteristics, and identical compliance certifications. Both devices share the same gate drive voltage specifications (6V, 10V) and maximum gate-source voltage (±20V).

Parameter Comparison

Engineering Selection Recommendations

The NTTFS012N10MD is the recommended substitute for the obsolete FDMC86183 based on the following engineering criteria:

Product Status: The NTTFS012N10MD is an active product from onsemi, ensuring ongoing availability and manufacturing support. The FDMC86183 is classified as obsolete, making the NTTFS012N10MD the appropriate replacement for new designs and production continuity.

Electrical Compatibility: Both devices operate at 100V Vdss with continuous drain currents of 45A to 47A (Tc), meeting the same application requirements. The RDS(on) specifications are closely matched (12.8 mOhm versus 14.4 mOhm), with the substitute exhibiting lower gate charge (13 nC versus 21 nC) and reduced input capacitance (965 pF versus 1515 pF), which may provide improved switching performance.

Thermal and Compliance: Both devices support the full -55°C to 150°C operating temperature range and carry identical ROHS3 compliance and MSL Level 1 ratings. Power dissipation ratings are equivalent (52W Tc versus 62W Tc), with the substitute offering slightly higher thermal capability.

Package Consideration: The NTTFS012N10MD uses an 8-WDFN (3.3x3.3) package versus the 8-PQFN (3.3x3.3) of the original part. Both are 8-pin surface mount packages with identical footprint dimensions (3.3x3.3mm). PCB layout compatibility requires verification of pin assignment and thermal pad configuration, though both packages are classified as PowerWDFN variants.

Frequently Asked Questions (FAQ)

Q: Can the NTTFS012N10MD directly replace the FDMC86183 without PCB modifications?

A: Both devices share identical footprint dimensions (3.3x3.3mm) and are 8-pin surface mount packages. However, the FDMC86183 uses 8-PQFN packaging while the NTTFS012N10MD uses 8-WDFN packaging. Pin assignment and thermal pad configuration must be verified against the respective datasheets to confirm direct compatibility. PCB layout modifications may be required.

Q: What are the key electrical differences between these two MOSFETs?

A: The primary electrical differences are: (1) Continuous drain current is 47A (FDMC86183) versus 45A (NTTFS012N10MD) at Tc; (2) RDS(on) is 12.8 mOhm versus 14.4 mOhm at specified conditions; (3) Gate charge is 21 nC versus 13 nC; (4) Input capacitance is 1515 pF versus 965 pF. Both devices maintain identical 100V Vdss rating and -55°C to 150°C operating range.

Q: Why is the NTTFS012N10MD recommended over the FDMC86183?

A: The NTTFS012N10MD is an active product with ongoing manufacturing support, while the FDMC86183 is obsolete. For new production and long-term component availability, the active substitute is the appropriate engineering choice. Electrical parameters are equivalent within acceptable tolerances for most applications.

Q: Are there compliance or regulatory differences between these parts?

A: Both devices are ROHS3 compliant, REACH unaffected, and carry MSL Level 1 ratings. Compliance certifications are identical, and both are suitable for applications requiring these regulatory standards.

Q: What is the significance of the lower gate charge in the NTTFS012N10MD?

A: The NTTFS012N10MD exhibits lower gate charge (13 nC versus 21 nC), which may result in faster switching transitions and reduced gate drive power requirements. This characteristic is determined by the device's internal structure and does not affect functional compatibility in most applications.

Q: How do the package types affect circuit design?

A: Both packages are 8-pin surface mount with 3.3x3.3mm footprints. The primary design consideration is verification of pin-to-pin correspondence and thermal pad layout. The 8-WDFN and 8-PQFN packages may have different thermal pad configurations, requiring PCB layout review to ensure proper thermal management and electrical connectivity.