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FDMC86102L N-Channel MOSFET 100V 7A/18A Equivalent & Substitute Parts
Part Overview
The FDMC86102L is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with continuous drain current of 7A at Ta (ambient temperature) and 18A at Tc (case temperature). This device is part of the PowerTrench® series and is designed for surface mount applications in the 8-MLP (3.3x3.3) package. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).
Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, gate charge, and thermal performance, while maintaining compatible surface mount packaging and operating temperature ranges.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 100 | V |
| Current - Continuous Drain @ 25°C (Ta) | 7 | A |
| Current - Continuous Drain @ 25°C (Tc) | 18 | A |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 7A, 10V | mOhm |
| Gate Charge (Qg) (Max) @ Vgs | 22 | nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 | pF @ 50V |
| Power Dissipation (Max) (Ta) | 2.3 | W |
| Power Dissipation (Max) (Tc) | 41 | W |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | 8-PowerWDFN (3.3x3.3) | Surface Mount |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | - |
Substitute Part Grouping Explanation
Substitute parts for the FDMC86102L are qualified based on the following critical electrical and mechanical parameters:
Voltage Rating Compatibility: The substitute part must maintain the 100V drain-to-source voltage (Vdss) rating or higher to ensure safe operation in the same circuit topology.
Continuous Drain Current: The substitute must provide continuous drain current capability at or above 7A (Ta) and 18A (Tc) to support equivalent or higher current handling without thermal derating.
On-Resistance (Rds On): The substitute must maintain comparable on-resistance characteristics (23 mOhm or lower at rated conditions) to ensure similar power dissipation and thermal performance.
Gate Charge and Input Capacitance: These parameters must be within acceptable ranges to maintain switching speed and gate drive circuit compatibility.
Package and Mounting: The substitute must use compatible surface mount packaging (8-PowerWDFN or equivalent 8-pin DFN variants with 3.3x3.3mm footprint) to ensure PCB layout compatibility.
Operating Temperature Range: The substitute must support the full -55°C to 150°C operating temperature range.
Compliance Status: The substitute must maintain RoHS3 compliance and REACH unaffected status.
Parameter Comparison
| Parameter | FDMC86102L (onsemi) | AON7292 (Alpha & Omega) | Unit |
|---|---|---|---|
| Drain to Source Voltage (Vdss) | 100 | 100 | V |
| Current - Continuous Drain (Ta) | 7 | 9 | A |
| Current - Continuous Drain (Tc) | 18 | 23 | A |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 7A, 10V | 24 mOhm @ 9A, 10V | mOhm |
| Gate Charge (Qg) (Max) @ Vgs | 22 | 25 | nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 | 1170 | pF @ 50V |
| Power Dissipation (Max) (Ta) | 2.3 | 4.1 | W |
| Power Dissipation (Max) (Tc) | 41 | 28 | W |
| Operating Temperature Range | -55 to 150 | -55 to 150 | °C (TJ) |
| Package Type | 8-PowerWDFN (3.3x3.3) | 8-PowerWDFN (3.3x3.3) | Surface Mount |
| FET Type | N-Channel | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | - |
| REACH Status | REACH Unaffected | REACH Unaffected | - |
Engineering Selection Recommendations
AON7292 Substitution Suitability
The AON7292 from Alpha & Omega Semiconductor Inc. qualifies as a direct substitute for the FDMC86102L based on the following criteria:
Electrical Parameter Alignment: Both devices share identical 100V drain-to-source voltage ratings. The AON7292 provides higher continuous drain current (9A at Ta, 23A at Tc) compared to the FDMC86102L (7A at Ta, 18A at Tc), enabling operation in applications requiring increased current capacity without circuit modification.
On-Resistance Compatibility: The AON7292 maintains on-resistance of 24 mOhm at 9A and 10V gate-source voltage, compared to 23 mOhm at 7A and 10V for the FDMC86102L. This minimal difference (1 mOhm) ensures equivalent power dissipation characteristics in typical operating conditions.
Gate Charge and Capacitance: Gate charge increases from 22 nC to 25 nC (3 nC difference), while input capacitance decreases from 1330 pF to 1170 pF. These variations remain within acceptable ranges for gate drive circuit compatibility.
Thermal Performance: The AON7292 demonstrates superior thermal performance with 4.1W power dissipation at Ta (versus 2.3W for FDMC86102L) and 28W at Tc (versus 41W for FDMC86102L), indicating improved thermal efficiency at case temperature conditions.
Package and Compliance: Both devices use 8-PowerWDFN (3.3x3.3mm) surface mount packaging, ensuring direct PCB footprint compatibility. Both maintain RoHS3 compliance and REACH unaffected status, satisfying regulatory requirements.
Product Status: Both devices are in active production status, ensuring long-term availability and supply chain stability.
Frequently Asked Questions (FAQ)
Q: Can the AON7292 be used as a direct replacement for the FDMC86102L without PCB modifications?
A: Yes. Both devices use identical 8-PowerWDFN (3.3x3.3mm) surface mount packaging, enabling direct PCB footprint compatibility without layout changes.
Q: What are the key electrical differences between these two devices?
A: The AON7292 provides higher continuous drain current (9A at Ta, 23A at Tc versus 7A and 18A), slightly higher gate charge (25 nC versus 22 nC), and lower input capacitance (1170 pF versus 1330 pF). On-resistance remains comparable at approximately 23-24 mOhm.
Q: Are there any gate drive circuit considerations when substituting the AON7292?
A: The 3 nC increase in gate charge (from 22 nC to 25 nC) is negligible and does not require gate drive circuit redesign. Existing gate drive circuits designed for the FDMC86102L operate within acceptable parameters for the AON7292.
Q: Does the AON7292 support the same operating temperature range?
A: Yes. Both devices operate across the identical -55°C to 150°C junction temperature range, ensuring thermal compatibility in all application environments.
Q: What is the significance of the lower input capacitance in the AON7292?
A: The 160 pF reduction in input capacitance (from 1330 pF to 1170 pF) results in faster switching transitions and reduced gate drive power consumption, providing performance benefits in high-frequency switching applications.
Q: Are both devices compliant with current regulatory standards?
A: Yes. Both the FDMC86102L and AON7292 maintain RoHS3 compliance and REACH unaffected status, satisfying current environmental and regulatory requirements.
Q: Which device should be selected for new designs?
A: Selection depends on application requirements. The AON7292 is suitable for applications requiring higher current capacity and improved thermal efficiency. The FDMC86102L remains appropriate for applications within its 7A/18A current specifications. Both devices are in active production and equally suitable for new designs.
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