FDMC8296 N-Channel 30V MOSFET Equivalent & Substitute Parts

Part Overview

The FDMC8296 is an N-Channel 30V MOSFET manufactured by onsemi in the PowerTrench® series, housed in an 8-MLP (3.3x3.3) surface mount package. This device is rated for 12A continuous drain current at Ta and 18A at Tc, with a maximum Rds(on) of 8mOhm at 12A and 10V gate-source voltage. The FDMC8296 is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production support. Substitute parts must maintain compatibility across drain-source voltage ratings, continuous drain current specifications, gate charge characteristics, and surface mount packaging requirements.

Substiute Parts

FDMC8296
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FDMC8296
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FDMC7696
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NTTFS4C10NTAG
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BSZ088N03LSGATMA1
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BSZ100N03MSGATMA1
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CSD16409Q3
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CSD17308Q3
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CSD17578Q3A
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CSD17578Q3AT
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RQ3E130BNTB
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Key Parameters

Parameter FDMC8296 Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current @ 25°C (Ta) 12 A
Continuous Drain Current @ 25°C (Tc) 18 A
Rds(on) Max @ Id, Vgs 8 mOhm @ 12A, 10V mOhm
Gate Charge (Qg) Max @ Vgs 23 nC @ 10V
Vgs(th) Max @ Id 3 V @ 250µA
Input Capacitance (Ciss) Max @ Vds 1385 pF @ 15V
Power Dissipation Max (Ta) 2.3 W
Power Dissipation Max (Tc) 27 W
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount -
Package 8-MLP (3.3x3.3) -
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
RoHS Status ROHS3 Compliant -
MSL Rating 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitute parts for the FDMC8296 are selected based on the following critical parameters that define functional equivalence:

Primary Matching Criteria:

  • Drain-Source Voltage (Vdss): 30V minimum
  • Continuous Drain Current: 12A (Ta) or higher
  • Gate Charge (Qg): 23 nC or lower at 10V
  • Rds(on): 8 mOhm or lower at rated conditions
  • Operating Temperature: -55°C to 150°C
  • Surface Mount Package: 8-pin configurations
  • RoHS3 Compliance and MSL 1 rating

Substitution Logic: Parts are grouped into three categories based on their relationship to the FDMC8296:

  1. Direct Onsemi Alternatives – Same manufacturer, same series, improved specifications or active product status
  2. Cross-Manufacturer Equivalents – Different manufacturers (Infineon, Texas Instruments, Rohm, STMicroelectronics) with matching or superior electrical characteristics
  3. Performance-Enhanced Substitutes – Higher current ratings or lower Rds(on) values suitable for applications requiring improved thermal performance

All substitute parts maintain the 30V Vdss rating, support the 12A minimum continuous drain current requirement, and are housed in compatible 8-pin surface mount packages. Gate charge and input capacitance values are within acceptable ranges for gate driver compatibility.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ Ta (A) Id @ Tc (A) Rds(on) Max (mOhm) Qg Max (nC) Ciss Max (pF) Package Status
FDMC8296 onsemi 30 12 18 8 @ 12A, 10V 23 @ 10V 1385 @ 15V 8-MLP (3.3x3.3) Obsolete
FDMC7696 onsemi 30 12 20 11.5 @ 12A, 10V 22 @ 10V 1430 @ 15V 8-MLP (3.3x3.3) Active
NTTFS4C10NTAG onsemi 30 8.2 44 7.4 @ 30A, 10V 18.6 @ 10V 993 @ 15V 8-WDFN (3.3x3.3) Active
BSZ088N03LSGATMA1 Infineon 30 12 40 8.8 @ 20A, 10V 21 @ 10V 1700 @ 15V PG-TSDSON-8 Not For New Designs
BSZ100N03MSGATMA1 Infineon 30 10 40 9.1 @ 20A, 10V 23 @ 10V 1700 @ 15V PG-TSDSON-8 Active
CSD16409Q3 Texas Instruments 25 15 60 8.2 @ 17A, 10V 5.6 @ 4.5V 800 @ 12.5V 8-VSONP (5x6) Active
CSD17308Q3 Texas Instruments 30 14 44 10.3 @ 10A, 8V 5.1 @ 4.5V 700 @ 15V 8-VSON-CLIP (3.3x3.3) Active
CSD17578Q3A Texas Instruments 30 20 N/A 7.3 @ 10A, 10V 22.2 @ 10V 1590 @ 15V 8-VSONP (3x3.3) Active
CSD17578Q3AT Texas Instruments 30 20 N/A 7.3 @ 10A, 10V 22.2 @ 10V 1590 @ 15V 8-VSONP (3x3.3) Active
RQ3E130BNTB Rohm Semiconductor 30 13 N/A 6 @ 13A, 10V 36 @ 10V 1900 @ 15V 8-HSMT (3.2x3) Active
STL11N3LLH6 STMicroelectronics 30 N/A 11 7.5 @ 5.5A, 10V 17 @ 4.5V 1690 @ 24V PowerFlat™ (3.3x3.3) Active

Engineering Selection Recommendations

Primary Recommendation: FDMC7696 (onsemi)

The FDMC7696 is the preferred direct replacement for the obsolete FDMC8296. Both devices are manufactured by onsemi within the PowerTrench® series and share identical 30V Vdss ratings and 8-MLP (3.3x3.3) packaging. The FDMC7696 is classified as Active product status, ensuring long-term availability and supply chain continuity. The FDMC7696 delivers 20A continuous drain current at Tc compared to 18A for the FDMC8296, providing improved thermal performance. Gate charge remains nearly identical at 22 nC versus 23 nC, ensuring compatibility with existing gate driver circuits. The Rds(on) specification of 11.5 mOhm is slightly higher than the FDMC8296's 8 mOhm, but remains within acceptable operating parameters for most applications. RoHS3 compliance and MSL 1 rating are maintained.

Secondary Recommendations:

CSD17308Q3 (Texas Instruments NexFET™ Series) – Offers 30V Vdss with 14A continuous drain current at Ta and 44A at Tc. The 8-VSON-CLIP (3.3x3.3) package is mechanically compatible with the original 8-MLP footprint. Gate charge is significantly lower at 5.1 nC, reducing gate driver power consumption. Rds(on) of 10.3 mOhm at 10A, 8V is acceptable for the application. Active product status ensures availability.

CSD17578Q3A or CSD17578Q3AT (Texas Instruments NexFET™ Series) – Rated for 30V Vdss and 20A continuous drain current at Ta, exceeding the FDMC8296 specifications. The 8-VSONP (3x3.3) package requires PCB layout verification for compatibility. Rds(on) of 7.3 mOhm at 10A, 10V provides superior performance. Gate charge of 22.2 nC matches the original specification. Both variants are Active products.

BSZ100N03MSGATMA1 (Infineon OptiMOS™ Series) – Provides 30V Vdss with 10A continuous drain current at Ta and 40A at Tc. The PG-TSDSON-8 package is mechanically similar to the original 8-MLP. Gate charge of 23 nC matches the FDMC8296 exactly. Rds(on) of 9.1 mOhm at 20A, 10V is acceptable. Active product status is confirmed.

NTTFS4C10NTAG (onsemi) – Offers superior performance with 30V Vdss, 8.2A continuous drain current at Ta, and 44A at Tc. The 8-WDFN (3.3x3.3) package is compatible with the original footprint. Gate charge of 18.6 nC is significantly lower, reducing switching losses. Rds(on) of 7.4 mOhm at 30A, 10V provides excellent on-state performance. Active product status ensures supply availability.

Devices Not Recommended for New Designs:

BSZ088N03LSGATMA1 (Infineon) – Although electrically compatible with 30V Vdss and 12A continuous drain current at Ta, this device is classified as "Not For New Designs." The PG-TSDSON-8 package differs from the original 8-MLP, requiring PCB redesign. New designs should select from Active product alternatives.

CSD16409Q3 (Texas Instruments) – This device has a reduced Vdss rating of 25V, which is below the FDMC8296's 30V specification. While the device is Active and offers higher current ratings, the lower voltage rating makes it unsuitable as a direct substitute for applications requiring the full 30V capability.

Frequently Asked Questions (FAQ)

Q: Can I use FDMC7696 as a direct replacement for FDMC8296 without PCB modifications?

A: Yes. The FDMC7696 and FDMC8296 share identical 30V Vdss ratings, 8-MLP (3.3x3.3) surface mount packages, and gate charge specifications (22 nC vs. 23 nC). Both devices are RoHS3 compliant with MSL 1 ratings. The FDMC7696 is the recommended replacement due to its Active product status and improved thermal performance (20A at Tc vs. 18A). No PCB layout changes are required.

Q: What is the difference between Ta and Tc current ratings?

A: Ta represents continuous drain current at ambient temperature (typically 25°C), while Tc represents continuous drain current at case temperature. Tc ratings are higher because they reflect the device's capability when mounted on a PCB with adequate thermal management. For thermal design calculations, use the Tc rating to determine maximum sustainable current under your specific cooling conditions.

Q: Why do some substitute parts have lower gate charge (Qg) values?

A: Gate charge directly affects switching speed and gate driver power consumption. Lower Qg values (such as 5.1 nC in the CSD17308Q3 versus 23 nC in the FDMC8296) indicate faster switching transitions and reduced gate driver current requirements. This can improve overall circuit efficiency but requires verification that your gate driver is compatible with the lower charge requirements. Consult the gate driver datasheet for minimum and maximum Qg specifications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this document are RoHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings, matching the FDMC8296 specifications. This ensures compatibility with standard manufacturing processes and long-term reliability.

Q: Can I use CSD16409Q3 as a substitute for FDMC8296?

A: CSD16409Q3 is not recommended as a direct substitute. While it offers superior current ratings (15A at Ta, 60A at Tc) and excellent Rds(on) performance (8.2 mOhm), its Vdss rating is only 25V compared to the FDMC8296's 30V. Applications requiring the full 30V capability will be at risk of device failure. Additionally, the 8-VSONP (5x6) package differs from the original 8-MLP (3.3x3.3), requiring PCB redesign. Select CSD17308Q3 or CSD17578Q3A for 30V-rated Texas Instruments alternatives.

Q: What package compatibility issues should I consider?

A: Most substitute parts use 8-pin surface mount packages with similar footprints (3.3x3.3 mm or comparable dimensions). However, package variants include 8-MLP, 8-WDFN, 8-VSON-CLIP, 8-VSONP, 8-HSMT, and PowerFlat™. While these packages are mechanically similar, verify that your PCB layout accommodates the specific package outline. Consult the device datasheet for precise pin configurations and thermal pad dimensions. The FDMC7696 offers the most direct compatibility due to identical 8-MLP packaging.

Q: How do I select between multiple substitute options?

A: Selection depends on your application requirements. For direct replacement with minimal PCB changes, choose FDMC7696. For improved thermal performance and higher current capability, select NTTFS4C10NTAG or CSD17578Q3A. For lowest gate charge and fastest switching, choose CSD17308Q3. For lowest Rds(on) and best on-state performance, select RQ3E130BNTB. Verify that your gate driver, PCB layout, and thermal management system are compatible with your chosen substitute before implementation.

Q: Is BSZ088N03LSGATMA1 suitable for new designs?

A: No. BSZ088N03LSGATMA1 is classified as "Not For New Designs" by Infineon. While the device is electrically compatible with the FDMC8296 (30V Vdss, 12A at Ta, 40A at Tc), its product lifecycle status indicates that Infineon is discontinuing this part. New designs should select from Active product alternatives such as BSZ100N03MSGATMA1, CSD17308Q3, or FDMC7696 to ensure long-term supply availability and support.

Q: What is the significance of the PowerTrench® and NexFET™ series designations?

A: PowerTrench® (onsemi) and NexFET™ (Texas Instruments) are proprietary MOSFET technology platforms that define the manufacturing process and performance characteristics. These designations do not affect substitution compatibility but indicate the manufacturer's technology generation. Devices within the same series typically share similar gate charge, switching characteristics, and thermal performance profiles. Cross-series substitution is acceptable provided electrical specifications match the application requirements.

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