FDMC7672S-F126 Equivalent & Substitute Parts

Part Overview

The FDMC7672S-F126 is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 14.8A continuous drain current at 25°C. This device features the PowerTrench® and SyncFET™ technology series and is packaged in an 8-MLP (3.3x3.3) surface mount configuration. The part is classified as obsolete, necessitating identification of active equivalent devices that maintain electrical and mechanical compatibility for ongoing production and maintenance applications.

Substiute Parts

FDMC7672S-F126

onsemiIn Stock: 1082FDMC7672S-F126 Datasheet

Current PartRFQ

RS1E240GNTB

Rohm SemiconductorIn Stock: 15991RS1E240GNTB Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDMC7672S-F126 is determined by strict electrical parameter matching within the N-Channel MOSFET category. The critical parameters that define substitution eligibility are:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
• Continuous Drain Current (Id): Must meet or exceed 14.8A at 25°C
• On-Resistance (Rds On): Must not exceed 6mOhm at specified gate voltage
• Gate Threshold Voltage (Vgs(th)): Must be within ±20V maximum gate voltage specification
• Operating Temperature Range: Must support -55°C to 150°C junction temperature

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount configuration required
• Package Classification: 8-pin power package format
• Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for handling consistency

The RS1E240GNTB from Rohm Semiconductor qualifies as a substitute based on exceeding all minimum electrical requirements while maintaining surface mount configuration and MSL 1 rating.

Parameter Comparison

Engineering Selection Recommendations

The RS1E240GNTB from Rohm Semiconductor is an active substitute for the obsolete FDMC7672S-F126. Selection of this substitute is based on the following engineering factors:

Product Status Justification: The FDMC7672S-F126 is classified as obsolete, making the RS1E240GNTB the appropriate choice for new designs and ongoing production requirements. The substitute maintains active product status with established supply chain availability.

Electrical Performance: The RS1E240GNTB exceeds the minimum electrical specifications of the original part across all critical parameters. The continuous drain current rating of 24A provides 62% additional current capacity compared to the 14.8A rating of the FDMC7672S-F126. The on-resistance of 3.3mOhm is 45% lower than the original 6mOhm specification, resulting in reduced power dissipation during operation.

Compliance and Certifications: Both devices maintain identical REACH Unaffected status and EAR99 ECCN classification, ensuring regulatory compliance consistency. Both devices carry MSL 1 (Unlimited) moisture sensitivity ratings, eliminating handling procedure changes during manufacturing and assembly.

Package and Mounting Considerations: The RS1E240GNTB is supplied in 8-HSOP surface mount packaging, which differs from the 8-MLP (3.3x3.3) package of the original part. PCB layout modifications are required to accommodate the different package footprint. The 8-HSOP package provides improved thermal performance through enhanced lead frame design.

Temperature Range Limitation: The RS1E240GNTB specifies a maximum junction temperature of 150°C, matching the upper limit of the FDMC7672S-F126 operating range. Applications requiring operation below -55°C must be evaluated separately, as the substitute does not specify a minimum operating temperature.

Frequently Asked Questions (FAQ)

Q: Can the RS1E240GNTB be used as a direct pin-for-pin replacement for the FDMC7672S-F126?

A: No. While both devices are N-Channel MOSFETs with identical 30V Vdss ratings, the package types differ. The FDMC7672S-F126 uses 8-MLP (3.3x3.3) packaging, while the RS1E240GNTB uses 8-HSOP packaging. PCB layout and footprint modifications are required. Pin configuration must be verified against manufacturer datasheets before implementation.

Q: What are the key electrical advantages of the RS1E240GNTB substitute?

A: The RS1E240GNTB provides three primary electrical advantages: (1) higher continuous drain current of 24A versus 14.8A, enabling operation at higher current levels; (2) lower on-resistance of 3.3mOhm versus 6mOhm, reducing conduction losses; (3) lower gate charge of 23nC versus 42nC, reducing gate drive power requirements and enabling faster switching transitions.

Q: Are there any thermal performance differences between these devices?

A: Yes. The RS1E240GNTB specifies maximum power dissipation of 3W at Ta (ambient temperature), compared to 2.3W for the FDMC7672S-F126. However, the substitute's lower on-resistance typically results in lower actual power dissipation during normal operation. The 8-HSOP package of the substitute provides improved thermal characteristics through enhanced lead frame design compared to the 8-MLP package.

Q: What is the minimum operating temperature for the RS1E240GNTB?

A: The provided specifications for the RS1E240GNTB do not include a minimum operating temperature. The FDMC7672S-F126 specifies -55°C minimum junction temperature. Applications requiring operation below 0°C should reference the complete Rohm Semiconductor datasheet for the RS1E240GNTB to confirm minimum temperature capability.

Q: Are both devices RoHS compliant?

A: The FDMC7672S-F126 does not specify RoHS status in the provided parameters. The RS1E240GNTB is explicitly listed as ROHS3 Compliant. Both devices maintain REACH Unaffected status and EAR99 ECCN classification.

Q: What supply chain considerations apply to this substitution?

A: The FDMC7672S-F126 is obsolete with limited remaining inventory. The RS1E240GNTB is an active product with significantly higher inventory availability (15,933 pieces versus 1,024 pieces). Long-term production planning should prioritize the active RS1E240GNTB to ensure supply continuity.

Q: How do the gate charge specifications affect circuit design?

A: The RS1E240GNTB has a gate charge of 23nC compared to 42nC for the FDMC7672S-F126. Lower gate charge reduces the energy required to switch the device and decreases gate drive circuit complexity. This may allow use of lower-power gate driver circuits in new designs using the substitute.