FDMC7660 N-Channel 30V Power MOSFET Equivalent & Substitute Parts

Part Overview

The FDMC7660 is an N-Channel 30V power MOSFET manufactured by onsemi, featuring a PowerTrench® series design in an 8-PowerTDFN surface mount package. This device delivers 20A continuous drain current at Ta (ambient temperature) and 40A at Tc (case temperature), with a maximum on-resistance of 2.2mOhm at 20A and 10V gate-source voltage. The FDMC7660 is classified as Active product status and is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are necessary when the FDMC7660 becomes unavailable, when design requirements demand alternative thermal or electrical performance characteristics, or when supply chain optimization requires component standardization across manufacturing facilities. Substitute devices must maintain compatibility across drain-source voltage rating, continuous drain current specifications, gate-source voltage limits, and surface mount package form factor.

Key Parameters

Parameter	FDMC7660 Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	20	A
Continuous Drain Current @ 25°C (Tc)	40	A
Rds On (Max) @ 20A, 10V	2.2	mOhm
Gate-Source Voltage (Vgs) Max	±20	V
Gate Charge (Qg) @ 10V	86	nC
Input Capacitance (Ciss) @ 15V	4830	pF
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-PowerTDFN	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
RoHS Status	ROHS3 Compliant	—
Product Status	Active	—

Substitute Part Grouping Explanation

Substitution of the FDMC7660 is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): Must equal 30V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Gate-Source Voltage (Vgs) Max: Must support ±20V
Operating Temperature Range: Must support -55°C to 150°C (TJ)
Mounting Type: Must be Surface Mount
Package Form Factor: Must be 8-PowerTDFN or equivalent footprint

Secondary Compatibility Parameters:

Continuous Drain Current (Ta/Tc): Substitute must meet or exceed 20A (Ta) and 40A (Tc)
On-Resistance (Rds On): Lower or equal values are acceptable
Gate Charge (Qg): Values within ±30% of 86nC are acceptable for switching performance
Input Capacitance (Ciss): Values within ±50% of 4830pF are acceptable
Compliance: Must be ROHS3 compliant with MSL 1 (Unlimited)

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria with minimal performance variation) and Similar Alternatives (meeting all primary criteria with acceptable performance trade-offs in secondary parameters).

Parameter Comparison

Parameter	FDMC7660	BSZ035N03MSGATMA1	BSC020N03LSGATMA1	BSC020N03MSGATMA1	BSC025N03LSGATMA1	BSC0502NSIATMA1	BSC0901NSIATMA1	BSC0902NSATMA1	BSZ019N03LSATMA1	BSZ0501NSIATMA1	BSZ0901NSATMA1
Manufacturer	onsemi	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon
Vdss (V)	30	30	30	30	30	30	30	30	30	30	30
Id @ Ta (A)	20	18	28	25	25	26	28	24	22	25	22
Id @ Tc (A)	40	40	100	100	100	100	100	100	40	40	40
Rds On (mOhm) @ Id, Vgs	2.2 @ 20A, 10V	3.5 @ 20A, 10V	2.0 @ 30A, 10V	2.0 @ 30A, 10V	2.5 @ 30A, 10V	2.3 @ 30A, 10V	2.0 @ 30A, 10V	2.6 @ 30A, 10V	1.9 @ 20A, 10V	2.0 @ 20A, 10V	2.0 @ 20A, 10V
Vgs(th) (V) @ 250µA	2.5	2.0	2.2	2.0	2.2	2.0	2.2	2.2	2.0	2.0	2.2
Qg (nC) @ 10V	86	74	93	124	74	26	20	26	44	33	45
Ciss (pF) @ 15V	4830	5700	7200	9600	6100	1600	2600	1700	2800	2000	2850
Vgs Max (V)	±20	±20	±20	±20	±20	±20	±20	±20	±20	±20	±20
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active	Not For New Designs	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Direct Equivalent Substitutes (Highest Compatibility):

BSZ0501NSIATMA1 and BSZ0901NSATMA1 are the closest functional equivalents to the FDMC7660. Both devices maintain the 30V Vdss rating, support 40A case temperature drain current, operate across the full -55°C to 150°C temperature range, and are packaged in 8-PowerTDFN form factor. Both are Active product status with ROHS3 compliance. BSZ0501NSIATMA1 delivers 25A at Ta with 2.0mOhm on-resistance, while BSZ0901NSATMA1 delivers 22A at Ta with identical 2.0mOhm on-resistance. Gate charge values (33nC and 45nC respectively) are significantly lower than the FDMC7660 (86nC), resulting in faster switching characteristics. Input capacitance values (2000pF and 2850pF) are substantially lower, reducing gate drive requirements.

Secondary Equivalent Substitutes (Acceptable Performance Trade-offs):

BSZ035N03MSGATMA1 maintains 30V Vdss, 40A Tc rating, and full temperature range operation. It delivers 18A at Ta with 3.5mOhm on-resistance, representing a slight performance reduction compared to the FDMC7660. Gate charge (74nC) and input capacitance (5700pF) are comparable to the main device. This part is suitable for applications where the reduced Ta current rating does not constrain system performance.

Higher Current Alternatives (For Enhanced Thermal Performance):

BSC020N03MSGATMA1, BSC025N03LSGATMA1, BSC0901NSIATMA1, and BSC0902NSATMA1 deliver 25A to 28A at Ta with 100A Tc ratings, providing significantly enhanced thermal performance for high-power applications. These devices maintain 30V Vdss, full temperature range operation, and 8-PowerTDFN packaging. On-resistance values range from 2.0mOhm to 2.6mOhm. Gate charge values (20nC to 26nC) are substantially lower, enabling faster switching. BSC025N03LSGATMA1 is marked "Not For New Designs" and should be avoided for new product development.

Compliance and Regulatory Status:

All substitute parts listed are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, matching the FDMC7660 regulatory profile. All Active-status parts are suitable for new designs. BSC025N03LSGATMA1 carries "Not For New Designs" status and is restricted to legacy system support only.

Frequently Asked Questions (FAQ)

Q: Can I substitute the FDMC7660 with any 30V N-Channel MOSFET?

A: No. Substitution requires strict alignment of multiple parameters beyond voltage rating. The substitute must maintain the same gate-source voltage limits (±20V), operating temperature range (-55°C to 150°C), continuous drain current specifications (minimum 20A at Ta, 40A at Tc), and 8-PowerTDFN package form factor. Additionally, the substitute must be ROHS3 compliant with MSL 1 rating.

Q: What is the difference between Ta and Tc drain current ratings?

A: Ta (ambient temperature) current rating represents continuous drain current at 25°C ambient temperature without forced cooling. Tc (case temperature) current rating represents continuous drain current when the device case is maintained at 25°C through active cooling or thermal management. The FDMC7660 is rated for 20A at Ta and 40A at Tc. Substitute parts must meet or exceed both specifications for direct equivalence.

Q: Why do some substitute parts have significantly lower gate charge values?

A: Gate charge (Qg) represents the total charge required to switch the MOSFET from off to on state. Lower gate charge values indicate faster switching speed and reduced gate drive power requirements. Substitutes with lower Qg values (such as BSC0901NSIATMA1 at 20nC versus FDMC7660 at 86nC) will switch faster, potentially reducing switching losses in high-frequency applications. However, lower Qg may require gate driver circuit adjustments to maintain stable switching behavior.

Q: Are all substitute parts available in the same packaging options?

A: All listed substitute parts are available in 8-PowerTDFN surface mount package, matching the FDMC7660 footprint. However, packaging options (Cut Tape, Digi-Reel, or Tape & Reel) vary by part number and supplier. Verify specific packaging availability with your component distributor before design finalization.

Q: What does "Not For New Designs" product status mean?

A: "Not For New Designs" indicates that the manufacturer no longer recommends the part for new product development. While the part remains available for legacy system support and repair, it may be subject to discontinuation without notice. BSC025N03LSGATMA1 carries this status and should be avoided in new designs. Use Active-status alternatives such as BSC020N03MSGATMA1 or BSC0901NSIATMA1 instead.

Q: How do I determine which substitute is best for my application?

A: Selection depends on three factors: (1) Thermal requirements—if your application requires higher case temperature current capability, select BSC020N03MSGATMA1 or BSC0901NSIATMA1 (100A Tc); (2) Switching frequency—if your application operates at high switching frequencies, select parts with lower gate charge such as BSC0901NSIATMA1 (20nC) or BSC0502NSIATMA1 (26nC); (3) Gate drive capability—if your gate driver has limited current output, select parts with lower input capacitance such as BSC0502NSIATMA1 (1600pF) or BSC0901NSIATMA1 (2600pF).

Q: Can I use BSZ035N03MSGATMA1 if my circuit requires 20A continuous current at ambient temperature?

A: BSZ035N03MSGATMA1 is rated for 18A at Ta, which is below the FDMC7660 specification of 20A at Ta. This part is not suitable for applications requiring the full 20A ambient temperature current rating. Use BSZ0501NSIATMA1 (25A at Ta), BSZ0901NSATMA1 (22A at Ta), or higher-current alternatives instead.

Q: What is the significance of input capacitance (Ciss) differences between parts?

A: Input capacitance represents the total capacitance seen at the gate terminal and directly affects gate charge requirements and gate driver design. Higher Ciss values require more gate charge and higher gate drive current. The FDMC7660 has 4830pF Ciss. Substitutes with significantly lower Ciss (such as BSC0502NSIATMA1 at 1600pF) may allow use of lower-power gate drivers, while substitutes with higher Ciss (such as BSC020N03MSGATMA1 at 9600pF) may require gate driver upgrades.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, matching the FDMC7660 regulatory profile. This ensures compatibility with environmental and regulatory requirements across global markets.

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