FDMC6675BZ P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMC6675BZ is a P-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 9.5A at Ta and 20A at Tc. This device is housed in an 8-MLP (3.3x3.3) surface mount package and is part of the PowerTrench® series. The FDMC6675BZ carries a "Not For New Designs" product status, indicating that onsemi has discontinued active development for this component. Identifying equivalent and substitute parts is necessary for ongoing production support, design revisions, and inventory management where the original part is no longer recommended for new applications.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	9.5	A
Continuous Drain Current @ 25°C (Tc)	20	A
Rds On (Max) @ Id, Vgs	14.4 mOhm @ 9.5A, 10V	—
Gate Charge (Qg) @ Vgs	65 nC @ 10V	—
Vgs(th) (Max) @ Id	3 V @ 250µA	—
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package	8-MLP (3.3x3.3)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the FDMC6675BZ is determined by strict alignment of the following electrical and mechanical parameters:

Electrical Compatibility Criteria:

FET Type: P-Channel topology required
Drain to Source Voltage (Vdss): 30V minimum rating
Continuous Drain Current: Minimum 9.5A at Ta (25°C ambient)
Gate Charge (Qg): Lower or equivalent values preferred for switching performance
Rds On: Lower or equivalent on-resistance for thermal performance
Vgs(th): Threshold voltage within ±25V gate voltage specification
Operating Temperature: -55°C to 150°C range maintained

Mechanical Compatibility Criteria:

Mounting Type: Surface Mount required
Package Type: 8-pin configurations with compatible pinout
RoHS3 Compliance: Required for regulatory alignment
Moisture Sensitivity Level (MSL): Level 1 (Unlimited) preferred

The substitute parts BSZ120P03NS3GATMA1 (Infineon Technologies) and SI7121ADN-T1-GE3 (Vishay Siliconix) meet these criteria with enhanced current ratings and active product status.

Parameter Comparison

Parameter	FDMC6675BZ (onsemi)	BSZ120P03NS3GATMA1 (Infineon)	SI7121ADN-T1-GE3 (Vishay)
FET Type	P-Channel	P-Channel	P-Channel
Vdss	30 V	30 V	30 V
Continuous Drain Current (Ta)	9.5 A	11 A	12 A
Continuous Drain Current (Tc)	20 A	40 A	Not specified
Rds On (Max) @ 10V Vgs	14.4 mOhm @ 9.5A	12 mOhm @ 20A	15 mOhm @ 7A
Gate Charge (Qg) @ 10V	65 nC	45 nC	50 nC
Vgs(th) (Max)	3 V @ 250µA	3.1 V @ 73µA	2.5 V @ 250µA
Input Capacitance (Ciss) @ 15V	2865 pF	3360 pF	1870 pF
Vgs (Max)	±25 V	±25 V	±25 V
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	-50 to 150 °C
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package	8-MLP (3.3x3.3)	PG-TSDSON-8	PowerPAK® 1212-8
Product Status	Not For New Designs	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

BSZ120P03NS3GATMA1 (Infineon Technologies OptiMOS™ Series)

The BSZ120P03NS3GATMA1 is an active product with enhanced electrical performance relative to the FDMC6675BZ. It provides 11A continuous drain current at Ta (exceeding the 9.5A requirement) and 40A at Tc (doubling the 20A specification). Gate charge is reduced to 45 nC from 65 nC, resulting in improved switching efficiency. On-resistance is 12 mOhm at 20A, 10V, representing a 17% improvement over the FDMC6675BZ specification. The device maintains full compliance with ROHS3 and operates across the identical -55°C to 150°C temperature range. Package transition from 8-MLP to PG-TSDSON-8 requires PCB layout verification for pin compatibility and thermal performance.

SI7121ADN-T1-GE3 (Vishay Siliconix TrenchFET® Series)

The SI7121ADN-T1-GE3 is an active product offering 12A continuous drain current at Ta, exceeding the 9.5A baseline. Gate charge is 50 nC at 10V, representing a 23% reduction from the FDMC6675BZ. Input capacitance is significantly lower at 1870 pF versus 2865 pF, enabling faster switching transitions. On-resistance is specified at 15 mOhm at 7A, 10V. The device maintains ROHS3 compliance and operates across -50°C to 150°C (minimum temperature limit is -50°C versus -55°C for the original part). Package transition to PowerPAK® 1212-8 requires PCB layout and thermal management evaluation.

Both substitute parts satisfy the electrical requirements for P-Channel 30V MOSFET applications with enhanced current ratings and active product status, eliminating the design obsolescence risk associated with the FDMC6675BZ.

Frequently Asked Questions (FAQ)

Q: Can the BSZ120P03NS3GATMA1 or SI7121ADN-T1-GE3 be used as direct pin-for-pin replacements for the FDMC6675BZ?

A: Both substitute parts are P-Channel MOSFETs with 8-pin surface mount packages and identical Vdss ratings. However, package geometries differ: the FDMC6675BZ uses 8-MLP (3.3x3.3), the BSZ120P03NS3GATMA1 uses PG-TSDSON-8, and the SI7121ADN-T1-GE3 uses PowerPAK® 1212-8. PCB layout modifications are required. Pin assignment verification against the specific datasheet for each part is mandatory before implementation.

Q: What are the key electrical advantages of the substitute parts?

A: The BSZ120P03NS3GATMA1 provides 11A continuous drain current (versus 9.5A) and 40A at Tc (versus 20A), with reduced gate charge of 45 nC (versus 65 nC). The SI7121ADN-T1-GE3 provides 12A continuous drain current with 50 nC gate charge and significantly lower input capacitance at 1870 pF. Both parts deliver improved switching performance and thermal characteristics within the same 30V voltage class.

Q: Why is the FDMC6675BZ marked "Not For New Designs"?

A: The "Not For New Designs" status indicates that onsemi has discontinued active development and support for this component. Existing inventory remains available, but the manufacturer does not recommend this part for new circuit designs. Substitution with active products ensures long-term supply chain stability and access to manufacturer technical support.

Q: Are the substitute parts RoHS3 compliant?

A: Yes. Both the BSZ120P03NS3GATMA1 and SI7121ADN-T1-GE3 are ROHS3 compliant, matching the compliance status of the FDMC6675BZ. Both parts also maintain MSL Level 1 (Unlimited) moisture sensitivity classification.

Q: What is the operating temperature difference between the substitute parts and the original?

A: The FDMC6675BZ and BSZ120P03NS3GATMA1 both operate across -55°C to 150°C. The SI7121ADN-T1-GE3 operates across -50°C to 150°C, with a minimum temperature limit 5°C higher than the original part. Applications requiring operation below -50°C must use the BSZ120P03NS3GATMA1 or retain the FDMC6675BZ.

Q: How do gate charge specifications affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and enables faster switching transitions. The BSZ120P03NS3GATMA1 (45 nC) and SI7121ADN-T1-GE3 (50 nC) both reduce gate charge relative to the FDMC6675BZ (65 nC), improving efficiency in high-frequency switching applications.

Q: What thermal performance differences exist between these parts?

A: The FDMC6675BZ dissipates 2.3W at Ta and 36W at Tc. The BSZ120P03NS3GATMA1 dissipates 2.1W at Ta and 52W at Tc, indicating superior thermal performance at elevated case temperatures. The SI7121ADN-T1-GE3 dissipates 3.5W at Ta and 27.8W at Tc. Thermal management design must account for these differences and the package geometry changes.

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