FDMC5614P Equivalent & Substitute Parts

Part Overview

The FDMC5614P is a P-Channel 60V MOSFET manufactured by onsemi in the PowerTrench® series, housed in an 8-MLP (3.3x3.3) surface mount package. This device is rated for 5.7A continuous drain current at 25°C (Ta) and 13.5A at case temperature (Tc), with a maximum power dissipation of 2.1W (Ta) and 42W (Tc). The FDMC5614P is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package form factors while meeting RoHS3 compliance and moisture sensitivity requirements.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	60	V
Current - Continuous Drain (Id) @ 25°C	5.7 (Ta), 13.5 (Tc)	A
Rds On (Max) @ Id, Vgs	100	mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id	3	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1055	pF @ 30V
Power Dissipation (Max)	2.1 (Ta), 42 (Tc)	W
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-PowerWDFN	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the FDMC5614P is determined by strict alignment of electrical and mechanical parameters. The primary substitution criteria are:

Electrical Compatibility:

Drain to Source Voltage (Vdss) must equal or exceed 60V
Continuous drain current (Id) at 25°C must support the application's current requirements
Gate threshold voltage (Vgs(th)) and maximum gate voltage (Vgs Max) must be compatible with driver circuits
On-resistance (Rds On) characteristics must not degrade circuit performance

Thermal and Power Characteristics:

Power dissipation ratings must accommodate the thermal environment
Operating temperature range must cover the application's operating conditions

Mechanical and Packaging Compatibility:

Surface mount package type and footprint must be compatible with PCB layout
Moisture sensitivity level and RoHS compliance must match procurement and assembly requirements

The substitute parts identified below meet these criteria within the constraints of available component specifications.

Parameter Comparison

Parameter	FDMC5614P	NTTFS5116PLTAG	NTTFS5116PLTWG	ZXMP6A17E6TA
Manufacturer	onsemi	onsemi	onsemi	Diodes Incorporated
FET Type	P-Channel	P-Channel	P-Channel	P-Channel
Vdss	60V	60V	60V	60V
Id @ 25°C (Ta)	5.7A	5.7A	5.7A	2.3A
Rds On (Max) @ Vgs 10V	100 mOhm @ 5.7A	52 mOhm @ 6A	52 mOhm @ 6A	125 mOhm @ 2.3A
Vgs(th) (Max) @ 250µA	3V	3V	3V	1V
Gate Charge (Qg) @ 10V	20 nC	25 nC	25 nC	17.7 nC
Vgs (Max)	±20V	±20V	±20V	±20V
Ciss @ 30V	1055 pF	1258 pF	1258 pF	637 pF
Power Dissipation (Ta)	2.1W	3.2W	3.2W	1.1W
Operating Temperature (TJ)	-55 to 150°C	-55 to 175°C	-55 to 175°C	-55 to 150°C
Package	8-MLP (3.3x3.3)	8-WDFN (3.3x3.3)	8-WDFN (3.3x3.3)	SOT-26
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

NTTFS5116PLTAG and NTTFS5116PLTWG (Primary Substitutes)

The NTTFS5116PLTAG and NTTFS5116PLTWG are direct functional equivalents to the FDMC5614P. Both parts are manufactured by onsemi and maintain identical electrical specifications: 60V Vdss, 5.7A continuous drain current at 25°C, and ±20V gate voltage rating. The 8-WDFN (3.3x3.3) package footprint is compatible with the original 8-MLP package layout. Both devices are classified as active products with extended operating temperature ranges (-55 to 175°C), providing improved thermal margin compared to the obsolete FDMC5614P. The NTTFS5116PLTAG and NTTFS5116PLTWG differ only in packaging format (Cut Tape vs. Digi-Reel®) and are electrically identical. Both are ROHS3 compliant with MSL 1 rating. The improved on-resistance specification (52 mOhm vs. 100 mOhm) and higher power dissipation rating (3.2W Ta, 40W Tc) provide enhanced performance characteristics.

ZXMP6A17E6TA (Limited Substitution)

The ZXMP6A17E6TA is manufactured by Diodes Incorporated and maintains the 60V Vdss rating and ±20V gate voltage specification. However, this device is rated for 2.3A continuous drain current at 25°C, which is significantly lower than the FDMC5614P's 5.7A rating. The ZXMP6A17E6TA is suitable only for applications where the required drain current does not exceed 2.3A. The SOT-26 package is physically distinct from the 8-MLP and 8-WDFN packages and requires PCB layout modification. This device carries AEC-Q101 automotive qualification and is classified as active. ROHS3 compliance and MSL 1 rating are maintained.

Frequently Asked Questions (FAQ)

Q: Can the NTTFS5116PLTAG directly replace the FDMC5614P on the PCB?

A: The NTTFS5116PLTAG uses an 8-WDFN (3.3x3.3) package, which shares the same footprint dimensions as the original 8-MLP package. Direct PCB replacement is possible without layout modification. Both devices are surface mount components with identical pin configurations for the 8-pin PowerWDFN package family.

Q: What is the difference between NTTFS5116PLTAG and NTTFS5116PLTWG?

A: Both parts are electrically and functionally identical. The difference lies in packaging format: NTTFS5116PLTAG is supplied in Cut Tape (CT) format, while NTTFS5116PLTWG is supplied in Digi-Reel® format. Selection depends on procurement and assembly requirements.

Q: Is the ZXMP6A17E6TA suitable for all FDMC5614P applications?

A: The ZXMP6A17E6TA is suitable only for applications where the continuous drain current requirement does not exceed 2.3A at 25°C. The FDMC5614P is rated for 5.7A, making the ZXMP6A17E6TA unsuitable for higher current applications. Additionally, the SOT-26 package requires PCB layout modification.

Q: Do all substitute parts maintain RoHS3 compliance?

A: Yes. The NTTFS5116PLTAG, NTTFS5116PLTWG, and ZXMP6A17E6TA are all ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, matching the original FDMC5614P specifications.

Q: What is the thermal advantage of the NTTFS5116 series over the FDMC5614P?

A: The NTTFS5116PLTAG and NTTFS5116PLTWG operate across an extended temperature range of -55 to 175°C (compared to -55 to 150°C for the FDMC5614P) and provide higher power dissipation ratings (3.2W Ta, 40W Tc vs. 2.1W Ta, 42W Tc). These characteristics provide improved thermal margin in high-temperature applications.

Q: Are there any on-resistance differences between the FDMC5614P and its substitutes?

A: Yes. The NTTFS5116PLTAG and NTTFS5116PLTWG specify 52 mOhm on-resistance at 6A and 10V gate voltage, compared to 100 mOhm for the FDMC5614P at 5.7A and 10V. The ZXMP6A17E6TA specifies 125 mOhm at 2.3A and 10V. Lower on-resistance reduces power dissipation and heat generation in the application circuit.

Q: Can the FDMC5614P be used interchangeably with the NTTFS5116 series in existing designs?

A: The NTTFS5116PLTAG and NTTFS5116PLTWG are direct functional equivalents with compatible package footprints, electrical ratings, and compliance certifications. The improved performance characteristics (lower on-resistance, extended temperature range, higher power dissipation) make these parts suitable for direct substitution in existing FDMC5614P designs.

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