FDMC3612 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMC3612 is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with continuous drain current ratings of 3.3A at ambient temperature (Ta) and 16A at case temperature (Tc). This device is part of the PowerTrench® series and is housed in an 8-MLP (3.3x3.3) surface mount package. The FDMC3612 is classified as an Active product with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified based on matching critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, gate threshold voltage, on-state resistance characteristics, and compatible surface mount packaging. Substitute parts must maintain functional equivalence within the specified operating temperature range of -55°C to 150°C junction temperature.

Substiute Parts

FDMC3612

onsemiIn Stock: 65416FDMC3612 Datasheet

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IRFHM3911TRPBF

Infineon TechnologiesIn Stock: 17456IRFHM3911TRPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDMC3612 are identified based on electrical parameter equivalence within defined tolerance ranges. The critical parameters determining substitution eligibility are:

Voltage Rating: Drain-to-source voltage (Vdss) must equal 100V to ensure compatibility with circuit design specifications.

Continuous Drain Current: Both ambient temperature (Ta) and case temperature (Tc) current ratings must meet or exceed the FDMC3612 specifications of 3.3A (Ta) and 16A (Tc) respectively.

On-State Resistance (Rds On): Maximum on-state resistance at specified gate-source voltage and drain current must not exceed the FDMC3612 value of 110 mOhm to maintain equivalent power dissipation characteristics.

Gate Threshold Voltage: Gate threshold voltage (Vgs(th)) must remain within acceptable limits to ensure proper gate drive compatibility.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitute parts must maintain similar gate charge and input capacitance characteristics.

Operating Temperature Range: Substitute parts must support the full operating temperature range of -55°C to 150°C junction temperature.

Package Compatibility: Surface mount packages must be mechanically compatible with PCB layouts designed for the FDMC3612. Pin configuration and thermal characteristics must be equivalent.

Compliance Status: Substitute parts must maintain RoHS3 compliance and equivalent moisture sensitivity level (MSL 1).

The IRFHM3911TRPBF from Infineon Technologies meets these substitution criteria with equivalent voltage rating, comparable current ratings, and compatible surface mount packaging.

Parameter Comparison

Engineering Selection Recommendations

The IRFHM3911TRPBF qualifies as a functional equivalent to the FDMC3612 based on matching electrical specifications and compliance certifications. Both devices are classified as Active products with full RoHS3 compliance and MSL 1 moisture sensitivity level.

Electrical Equivalence: The IRFHM3911TRPBF maintains the same 100V drain-to-source voltage rating and provides comparable continuous drain current ratings (3.2A Ta, 20A Tc) that meet or exceed FDMC3612 specifications. On-state resistance values are within acceptable tolerance (115 mOhm versus 110 mOhm), and gate threshold voltage characteristics are equivalent at 4V.

Thermal Performance: The IRFHM3911TRPBF demonstrates improved thermal characteristics with lower power dissipation at case temperature (29W versus 35W), while maintaining slightly higher ambient temperature dissipation (2.8W versus 2.3W). Both devices operate across the full -55°C to 150°C junction temperature range.

Switching Characteristics: Gate charge is slightly elevated in the IRFHM3911TRPBF (26 nC versus 21 nC), while input capacitance is reduced (760 pF versus 880 pF). These differences result in comparable switching performance with marginally different gate drive requirements.

Package Considerations: The IRFHM3911TRPBF uses an 8-PowerTDFN (3x3) package compared to the FDMC3612's 8-PowerWDFN (3.3x3.3) package. Both are surface mount packages with similar thermal and electrical characteristics. PCB layout modifications may be required due to package footprint differences.

Compliance and Regulatory: Both devices maintain equivalent compliance status with ROHS3 certification and REACH Unaffected designation, ensuring regulatory compatibility in equivalent applications.

Frequently Asked Questions (FAQ)

Q: Can the IRFHM3911TRPBF be used as a direct replacement for the FDMC3612 without circuit modifications?

A: The IRFHM3911TRPBF is electrically equivalent to the FDMC3612 and can function in equivalent applications. However, PCB layout modifications are required due to package footprint differences between the 8-PowerWDFN (3.3x3.3) and 8-PowerTDFN (3x3) packages. Gate drive circuits may require minor adjustment due to increased gate charge (26 nC versus 21 nC).

Q: What are the key electrical differences between these two devices?

A: Both devices share identical 100V drain-to-source voltage ratings and 4V gate threshold voltage specifications. The IRFHM3911TRPBF provides higher case temperature drain current (20A versus 16A) and lower case temperature power dissipation (29W versus 35W). Gate charge is 5 nC higher in the IRFHM3911TRPBF, while input capacitance is 120 pF lower.

Q: Are both devices RoHS3 compliant?

A: Yes, both the FDMC3612 and IRFHM3911TRPBF are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level and REACH Unaffected status.

Q: What is the impact of the different package types on PCB design?

A: The FDMC3612 uses an 8-PowerWDFN package with 3.3x3.3mm dimensions, while the IRFHM3911TRPBF uses an 8-PowerTDFN package with 3x3mm dimensions. The footprint differences require PCB layout redesign, including pad repositioning and thermal via placement adjustments. Both packages are surface mount compatible with similar thermal performance characteristics.

Q: How do the gate charge specifications affect gate driver selection?

A: The FDMC3612 requires 21 nC gate charge at 10V, while the IRFHM3911TRPBF requires 26 nC. This 5 nC difference may require gate driver current capability adjustment to maintain equivalent switching speed. Existing gate driver circuits designed for the FDMC3612 may require verification for the IRFHM3911TRPBF to ensure adequate drive current.

Q: Are the operating temperature ranges identical?

A: Yes, both devices operate across the identical temperature range of -55°C to 150°C junction temperature, ensuring thermal compatibility in equivalent applications.

Q: What is the significance of the lower input capacitance in the IRFHM3911TRPBF?

A: The IRFHM3911TRPBF has lower input capacitance (760 pF versus 880 pF) at 50V drain-source voltage. This results in reduced gate charge requirements and potentially faster switching transitions, which may improve efficiency in high-frequency switching applications.