FDMC2D8N025S N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMC2D8N025S is an N-Channel MOSFET manufactured by onsemi, rated for 25V drain-to-source voltage with 124A continuous drain current at 25°C (Tc). This device is housed in an 8-PowerWDFN surface mount package and is designed for power switching applications requiring high current handling capability.

The FDMC2D8N025S is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

FDMC2D8N025S

onsemiIn Stock: 9480FDMC2D8N025S Datasheet

Current PartRFQ

SISS08DN-T1-GE3

Vishay SiliconixIn Stock: 6799SISS08DN-T1-GE3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDMC2D8N025S are identified based on the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): 25V minimum
• Continuous Drain Current (Id): Capable of supporting 124A or greater at 25°C
• RDS(on) characteristics: Comparable on-resistance to ensure thermal and efficiency performance
• Gate Charge (Qg): Similar gate charge for compatible drive circuit operation
• Operating Temperature Range: -55°C to 150°C (TJ) minimum

Mechanical Compatibility Criteria:

• Surface Mount technology
• Compatible package footprint and thermal characteristics
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

Compliance Requirements:

• RoHS3 Compliant
• ECCN: EAR99
• HTSUS: 8541.29.0095

The SISS08DN-T1-GE3 meets these substitution criteria through equivalent voltage rating, superior continuous drain current capability, comparable RDS(on) performance, and full compliance with environmental and regulatory standards.

Parameter Comparison

Engineering Selection Recommendations

SISS08DN-T1-GE3 as Primary Substitute:

The SISS08DN-T1-GE3 is an active product from Vishay Siliconix and serves as a direct functional substitute for the obsolete FDMC2D8N025S. Both devices share identical 25V Vdss ratings and operate across the same temperature range (-55°C to 150°C TJ).

The SISS08DN-T1-GE3 provides superior electrical performance characteristics:

• Continuous drain current of 195.5A (Tc) exceeds the FDMC2D8N025S specification of 124A (Tc)
• RDS(on) of 1.23 mOhm @ 15A, 10V demonstrates lower on-resistance
• Power dissipation capability of 65.7W (Tc) exceeds the 47W (Tc) rating of the original part

Both devices maintain full compliance with ROHS3, EAR99 ECCN classification, and MSL 1 (Unlimited) moisture sensitivity requirements. The SISS08DN-T1-GE3 carries active product status, ensuring long-term availability and supply chain support.

Package differences exist: the FDMC2D8N025S uses 8-PowerWDFN while the SISS08DN-T1-GE3 uses PowerPAK® 1212-8S. PCB layout and thermal management design modifications are required to accommodate the different package footprint.

Frequently Asked Questions (FAQ)

Q: Can the SISS08DN-T1-GE3 directly replace the FDMC2D8N025S without circuit modifications?

A: Electrical substitution is valid based on matching Vdss (25V), superior Id capability (195.5A vs. 124A), and comparable RDS(on) performance. However, package geometry differs (PowerPAK® 1212-8S vs. 8-PowerWDFN), requiring PCB layout redesign and thermal management evaluation.

Q: What are the key electrical parameters that determine substitution compatibility?

A: Drain-to-Source Voltage (Vdss), continuous drain current capability (Id), on-resistance (RDS(on)), gate charge (Qg), and operating temperature range are the primary parameters. The substitute must meet or exceed the original part specifications in these areas.

Q: Are there compliance or regulatory differences between these parts?

A: Both the FDMC2D8N025S and SISS08DN-T1-GE3 are ROHS3 compliant, carry EAR99 ECCN classification, and maintain MSL 1 (Unlimited) moisture sensitivity ratings. No compliance barriers exist for substitution.

Q: What is the significance of the different package types?

A: The 8-PowerWDFN and PowerPAK® 1212-8S packages have different footprints, lead configurations, and thermal characteristics. PCB redesign is necessary to accommodate the SISS08DN-T1-GE3 package. Thermal performance should be re-evaluated based on the new package thermal resistance specifications.

Q: Why is the FDMC2D8N025S classified as obsolete?

A: Obsolete status indicates the manufacturer (onsemi) has discontinued production. The SISS08DN-T1-GE3 is an active product with ongoing manufacturing support, making it suitable for new designs and production continuity.

Q: How do gate charge differences affect circuit design?

A: The SISS08DN-T1-GE3 has a gate charge of 82 nC @ 10V compared to 63 nC @ 10V for the FDMC2D8N025S. Higher gate charge requires slightly more drive current from the gate driver circuit. Verify gate driver capability to ensure adequate switching performance.

Q: What thermal considerations apply when substituting these parts?

A: The SISS08DN-T1-GE3 supports higher power dissipation (65.7W Tc vs. 47W Tc) and has lower RDS(on), resulting in reduced heat generation at equivalent current levels. Thermal management design should be re-evaluated for the new package and improved thermal characteristics.