FDMC2674 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMC2674 is an N-Channel MOSFET manufactured by onsemi, rated for 220V drain-to-source voltage with 1A continuous drain current at ambient temperature (Ta) and 7A at case temperature (Tc). This device is part of the UniFET™ series and is packaged in a surface-mount 8-MLP (3.3x3.3) configuration. The FDMC2674 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain functional compatibility within the specified electrical and mechanical parameters while accommodating the transition from obsolete to active product status.

Substiute Parts

FDMC2674
onsemiIn Stock: 1954FDMC2674 Datasheet
FDMC2674
Current Part
FDMC2610
onsemiIn Stock: 4390FDMC2610 Datasheet
FDMC2610
MFR Recommended
BSZ440N10NS3GATMA1
Infineon TechnologiesIn Stock: 3262BSZ440N10NS3GATMA1 Datasheet
BSZ440N10NS3GATMA1
Similar

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 220 V
Continuous Drain Current @ 25°C (Ta) 1 A
Continuous Drain Current @ 25°C (Tc) 7 A
Power Dissipation (Ta) 2.1 W
Power Dissipation (Tc) 42 W
Gate-to-Source Voltage (Vgs Max) ±20 V
On-State Drain Resistance (Rds On Max) 366 mOhm @ 1A, 10V
Gate Threshold Voltage (Vgs(th) Max) 4 V @ 250µA
Gate Charge (Qg Max) 18 nC @ 10V
Input Capacitance (Ciss Max) 1180 pF @ 100V
Operating Temperature Range -55 to 150 °C (TJ)
Package Type 8-PowerWDFN (3.3x3.3) Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the FDMC2674 are identified based on the following critical parameters that determine functional compatibility:

Primary Substitution Criteria:

  • FET Type: N-Channel MOSFET technology
  • Drain-to-Source Voltage (Vdss): Equal to or greater than 220V
  • Continuous Drain Current: Capable of supporting 1A (Ta) and 7A (Tc) minimum
  • Power Dissipation: Minimum 2.1W (Ta) and 42W (Tc)
  • Gate-to-Source Voltage Range: ±20V maximum
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package Compatibility: Surface-mount configuration with compatible pinout
  • Compliance: ROHS3 compliant, MSL 1 rating

Substitution Categories:

Category 1 - Manufacturer Recommended Substitute (onsemi Series): The FDMC2610 is the primary recommended substitute from onsemi's UniFET™ series. While this part operates at a lower Vdss rating (200V versus 220V), it provides superior current handling (2.2A Ta / 9.5A Tc) and improved on-state resistance (200mOhm versus 366mOhm), making it suitable for applications where the 220V rating is not a hard requirement. Both parts share identical package geometry, thermal characteristics, and compliance certifications.

Category 2 - Cross-Manufacturer Substitute (Infineon OptiMOS™ Series): The BSZ440N10NS3GATMA1 from Infineon Technologies operates at a significantly lower Vdss rating (100V) with substantially higher current capability (5.3A Ta / 18A Tc) and superior on-state resistance (44mOhm). This part is suitable only for applications where the 220V voltage rating is not required and where the lower Vdss is acceptable. Package compatibility differs (PG-TSDSON-8 versus 8-PowerWDFN), requiring PCB layout verification.

Parameter Comparison

Parameter FDMC2674 (Main) FDMC2610 (Recommended) BSZ440N10NS3GATMA1 (Alternative) Unit
Manufacturer onsemi onsemi Infineon Technologies
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Drain-to-Source Voltage (Vdss) 220 200 100 V
Continuous Drain Current (Ta) 1 2.2 5.3 A
Continuous Drain Current (Tc) 7 9.5 18 A
Power Dissipation (Ta) 2.1 2.1 W
Power Dissipation (Tc) 42 42 29 W
Rds On (Max) 366 @ 1A, 10V 200 @ 2.2A, 10V 44 @ 12A, 10V mOhm
Gate Threshold Voltage (Vgs(th) Max) 4 @ 250µA 4 @ 250µA 2.7 @ 12µA V
Gate Charge (Qg Max) 18 @ 10V 18 @ 10V 9.1 @ 10V nC
Gate-to-Source Voltage (Vgs Max) ±20 ±20 ±20 V
Input Capacitance (Ciss Max) 1180 @ 100V 960 @ 100V 640 @ 50V pF
Operating Temperature Range -55 to 150 -55 to 150 -55 to 150 °C (TJ)
Package Type 8-PowerWDFN (3.3x3.3) 8-PowerWDFN (3.3x3.3) 8-PowerTDFN
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

FDMC2610 Selection Criteria:

The FDMC2610 is the primary recommended substitute for the obsolete FDMC2674. Both devices are manufactured by onsemi within the UniFET™ series and share identical package geometry (8-PowerWDFN 3.3x3.3), thermal performance (42W Tc), and compliance certifications (ROHS3, MSL 1). The FDMC2610 is currently in active production status, ensuring long-term availability and supply chain stability.

The FDMC2610 operates at 200V Vdss, which is 20V lower than the FDMC2674. This substitution is appropriate for applications where the circuit design does not require the full 220V rating. The FDMC2610 provides superior electrical performance with doubled continuous drain current (2.2A Ta versus 1A Ta) and improved on-state resistance (200mOhm versus 366mOhm), resulting in reduced power dissipation and improved thermal efficiency in equivalent applications.

BSZ440N10NS3GATMA1 Selection Criteria:

The BSZ440N10NS3GATMA1 from Infineon Technologies is an alternative substitute suitable only for applications where the 100V Vdss rating is acceptable. This device is in active production and offers significantly enhanced current handling (5.3A Ta / 18A Tc) and superior on-state resistance (44mOhm). The package type differs (PG-TSDSON-8 versus 8-PowerWDFN), requiring PCB layout and thermal management verification before implementation.

The BSZ440N10NS3GATMA1 is appropriate for low-voltage applications (100V maximum) where the FDMC2674's 220V rating is not required and where the enhanced current capability and reduced on-state resistance provide design advantages.

Compliance and Availability:

All substitute parts maintain ROHS3 compliance and MSL 1 moisture sensitivity ratings, ensuring compatibility with standard manufacturing and storage protocols. Both FDMC2610 and BSZ440N10NS3GATMA1 are in active production with confirmed inventory availability, supporting immediate design transitions from the obsolete FDMC2674.

Frequently Asked Questions (FAQ)

Q: Can the FDMC2610 directly replace the FDMC2674 in all applications?

A: The FDMC2610 can replace the FDMC2674 in applications where the circuit design does not require the full 220V drain-to-source voltage rating. The FDMC2610 operates at 200V maximum Vdss. If your application requires operation above 200V, the FDMC2610 is not suitable. Both devices share identical package geometry and thermal characteristics, enabling direct PCB substitution without layout modifications.

Q: What are the key differences between the FDMC2610 and FDMC2674?

A: The primary differences are: (1) Vdss rating: FDMC2610 is 200V versus FDMC2674 at 220V; (2) Continuous drain current: FDMC2610 provides 2.2A (Ta) and 9.5A (Tc) versus 1A (Ta) and 7A (Tc); (3) On-state resistance: FDMC2610 is 200mOhm versus 366mOhm; (4) Product status: FDMC2610 is active production versus FDMC2674 obsolete. Both share identical package, thermal performance, and compliance certifications.

Q: Is the BSZ440N10NS3GATMA1 a suitable replacement for the FDMC2674?

A: The BSZ440N10NS3GATMA1 is suitable only for applications where the 100V Vdss rating is acceptable. This device is not suitable for circuits requiring operation above 100V. The package type differs (PG-TSDSON-8 versus 8-PowerWDFN), requiring PCB layout verification. The BSZ440N10NS3GATMA1 offers superior current handling and lower on-state resistance, making it advantageous for low-voltage, high-current applications.

Q: Are there package compatibility issues between the FDMC2674 and FDMC2610?

A: No. Both the FDMC2674 and FDMC2610 use identical 8-PowerWDFN (3.3x3.3) surface-mount packages with compatible pinouts. Direct PCB substitution is possible without layout modifications.

Q: Are there package compatibility issues between the FDMC2674 and BSZ440N10NS3GATMA1?

A: Yes. The FDMC2674 uses an 8-PowerWDFN package while the BSZ440N10NS3GATMA1 uses a PG-TSDSON-8 package. Although both are 8-pin surface-mount devices, the physical dimensions and pinout differ. PCB layout modifications are required for substitution.

Q: What is the operating temperature range for all three devices?

A: All three devices (FDMC2674, FDMC2610, and BSZ440N10NS3GATMA1) operate across the identical temperature range of -55°C to 150°C (junction temperature TJ).

Q: Are all substitute parts RoHS compliant?

A: Yes. The FDMC2674, FDMC2610, and BSZ440N10NS3GATMA1 are all ROHS3 compliant with MSL 1 (unlimited) moisture sensitivity ratings, ensuring compatibility with standard manufacturing and storage protocols.

Q: What is the gate charge difference between the FDMC2674 and its substitutes?

A: The FDMC2674 and FDMC2610 both have identical gate charge specifications of 18 nC @ 10V. The BSZ440N10NS3GATMA1 has a lower gate charge of 9.1 nC @ 10V, resulting in faster switching characteristics and reduced gate drive power requirements.

Q: Which substitute part should I select for a new design?

A: For new designs, the FDMC2610 is the recommended primary choice due to its identical package geometry, thermal performance, compliance certifications, and active production status. Select the BSZ440N10NS3GATMA1 only if your application requires the enhanced current capability and lower on-state resistance of a 100V-rated device, and if PCB layout modifications are acceptable.

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