FDMC15N06 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMC15N06 is an N-Channel MOSFET manufactured by onsemi, rated for 55V drain-to-source voltage with continuous drain current of 2.4A at ambient temperature (Ta) and 15A at case temperature (Tc). This device is packaged in an 8-MLP (3.3x3.3) surface mount configuration and is classified as obsolete. Due to its obsolete status, equivalent substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices must maintain functional compatibility across voltage ratings, current handling, thermal characteristics, and surface mount packaging standards.

Key Parameters

Parameter	FDMC15N06 Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current @ 25°C (Ta)	2.4	A
Continuous Drain Current @ 25°C (Tc)	15	A
Rds On (Max) @ 15A, 10V	900	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	11.5	nC
Power Dissipation (Ta)	2.3	W
Power Dissipation (Tc)	35	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package Type	8-PowerWDFN	—
RoHS Status	ROHS3 Compliant	—
MSL Rating	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the FDMC15N06 are selected based on the following critical parameters that determine functional equivalence:

Voltage Rating Compatibility: Substitute devices must have a Vdss rating equal to or greater than 55V. This ensures the MOSFET can withstand the maximum drain-to-source voltage in the application without breakdown.

Current Handling Capability: Substitute devices must support continuous drain current at case temperature (Tc) equal to or greater than 15A. This parameter directly correlates to the thermal and electrical performance requirements of the original device.

Thermal Performance: Power dissipation at case temperature (Tc) must be equal to or greater than 35W to ensure adequate thermal management in the application circuit.

Surface Mount Packaging: All substitute devices must be surface mount technology with compatible pin configurations and footprints suitable for 8-pin power packages.

Compliance Standards: All substitute devices must maintain ROHS3 compliance and MSL rating of 1 (Unlimited) to ensure environmental and moisture sensitivity compatibility.

Gate Drive Characteristics: Substitute devices must operate with standard 10V gate drive voltage to ensure compatibility with existing gate driver circuits.

The four substitute parts listed below meet these criteria while offering improved performance characteristics from active manufacturers.

Parameter Comparison

Parameter	FDMC15N06	BSZ067N06LS3GATMA1	BSZ097N04LSGATMA1	BSZ100N06LS3GATMA1	BSZ110N06NS3GATMA1	Unit
Manufacturer	onsemi	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	—
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	—
Vdss	55	60	40	60	60	V
Continuous Drain Current (Ta)	2.4	14	12	11	—	A
Continuous Drain Current (Tc)	15	20	40	20	20	A
Rds On (Max) @ 10V	900	6.7	9.7	10	11	mOhm
Gate Threshold Voltage (Vgs(th))	4	2.2	2	2.2	4	V
Gate Charge (Qg) @ 10V	11.5	67	24	45	33	nC
Power Dissipation (Ta)	2.3	2.1	2.1	2.1	2.1	W
Power Dissipation (Tc)	35	69	35	50	50	W
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	—
Package Type	8-PowerWDFN	8-PowerVDFN	8-PowerTDFN	8-PowerVDFN	8-PowerVDFN	—
Product Status	Obsolete	Active	Active	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

BSZ067N06LS3GATMA1 (Infineon Technologies)

This substitute provides the highest current handling capability at case temperature (20A Tc) and the lowest on-resistance (6.7 mOhm @ 10V), delivering superior thermal performance with 69W power dissipation at Tc. The 60V Vdss rating exceeds the FDMC15N06 requirement. This device is manufactured by Infineon Technologies, an active supplier with established supply chain continuity. ROHS3 compliance and MSL 1 rating ensure environmental and moisture compatibility. The higher gate charge (67 nC) requires consideration in gate driver design but does not preclude substitution. Packaging is 8-PowerVDFN, which is compatible with standard 8-pin power package footprints.

BSZ097N04LSGATMA1 (Infineon Technologies)

This substitute is rated for 40V Vdss, which is below the FDMC15N06 specification of 55V. This device is suitable only for applications where the actual operating voltage does not exceed 40V. The device offers exceptional current handling at case temperature (40A Tc) and maintains the same power dissipation as the original (35W Tc). Gate charge is moderate at 24 nC. Packaging is 8-PowerTDFN. This substitute is appropriate for voltage-derating scenarios only.

BSZ100N06LS3GATMA1 (Infineon Technologies)

This substitute provides 60V Vdss rating with 20A continuous drain current at case temperature and 50W power dissipation at Tc. On-resistance is 10 mOhm @ 10V, slightly higher than BSZ067N06LS3GATMA1 but acceptable for most applications. Gate charge is 45 nC, representing a moderate increase from the original. Infineon Technologies maintains active product status with established supply availability. ROHS3 compliance and MSL 1 rating are maintained. Packaging is 8-PowerVDFN. This device offers balanced performance across all critical parameters.

BSZ110N06NS3GATMA1 (Infineon Technologies)

This substitute is rated for 60V Vdss with 20A continuous drain current at case temperature and 50W power dissipation at Tc. On-resistance is 11 mOhm @ 10V. Gate threshold voltage matches the original at 4V, and gate charge is 33 nC. Infineon Technologies maintains active product status. ROHS3 compliance and MSL 1 rating are maintained. Packaging is 8-PowerVDFN. This device provides the closest electrical characteristics to the original FDMC15N06 while offering improved supply continuity.

All four substitute devices are manufactured by Infineon Technologies, an active supplier with established distribution networks. All devices maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity ratings, ensuring compatibility with existing manufacturing and storage protocols.

Frequently Asked Questions (FAQ)

Q: Why is the FDMC15N06 being replaced?

A: The FDMC15N06 is classified as obsolete by onsemi. Substitute parts from active manufacturers ensure continued availability, supply chain stability, and access to ongoing technical support and manufacturing improvements.

Q: What are the critical parameters for substitution?

A: The critical parameters are: (1) Drain-to-source voltage (Vdss) equal to or greater than 55V, (2) Continuous drain current at case temperature (Tc) equal to or greater than 15A, (3) Power dissipation at Tc equal to or greater than 35W, (4) Surface mount 8-pin power package configuration, and (5) ROHS3 compliance with MSL 1 rating.

Q: Can BSZ097N04LSGATMA1 be used as a direct substitute?

A: BSZ097N04LSGATMA1 has a Vdss rating of 40V, which is below the FDMC15N06 specification of 55V. This device can only be used in applications where the actual operating voltage does not exceed 40V. Voltage derating analysis is required before substitution.

Q: What is the difference between the package types listed?

A: The FDMC15N06 uses 8-PowerWDFN packaging, while the substitute devices use 8-PowerVDFN or 8-PowerTDFN packaging. These are all 8-pin power packages with similar footprints and pin configurations suitable for surface mount assembly. Physical compatibility should be verified against the specific PCB layout.

Q: Do the substitute parts require different gate driver circuits?

A: All substitute devices operate with 10V gate drive voltage, consistent with the original FDMC15N06. However, gate charge values vary among substitutes (ranging from 24 nC to 67 nC). Higher gate charge may require increased gate driver current capability. Gate driver circuit verification is recommended based on the selected substitute device.

Q: Are all substitute devices from the same manufacturer?

A: Yes, all four substitute devices are manufactured by Infineon Technologies. This ensures consistent quality standards, technical support, and supply chain management from a single active supplier.

Q: What is the significance of the lower on-resistance in substitute devices?

A: Lower on-resistance (Rds On) values in substitute devices result in reduced power dissipation during operation, improved thermal efficiency, and lower heat generation. This represents an improvement over the original FDMC15N06 specification of 900 mOhm.

Q: Are moisture sensitivity and RoHS compliance maintained?

A: Yes, all substitute devices maintain MSL 1 (Unlimited) moisture sensitivity rating and ROHS3 compliance, ensuring compatibility with existing manufacturing processes, storage protocols, and environmental regulations.

Q: Which substitute device provides the best overall performance?

A: BSZ067N06LS3GATMA1 offers the lowest on-resistance (6.7 mOhm) and highest power dissipation capability (69W Tc), providing superior thermal and electrical performance. However, the selection depends on specific application requirements regarding current handling, thermal management, and gate drive characteristics.

Q: Can multiple substitute devices be used interchangeably in the same application?

A: Substitutes can be used interchangeably only if the application circuit accommodates the variations in gate charge, on-resistance, and power dissipation. Circuit simulation and thermal analysis are recommended to confirm compatibility with the specific application before production implementation.

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