FDMA905P_F130 Equivalent & Substitute Parts

Part Overview

The FDMA905P_F130 is a P-Channel MOSFET manufactured by onsemi, rated for 12V drain-to-source voltage with 10A continuous drain current in a 6-MicroFET (2x2) surface mount package. This component is classified as obsolete, necessitating identification of equivalent and substitute parts for ongoing design requirements and procurement needs. Active alternatives with identical or superior electrical characteristics are available to support continued system implementation.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	12	V
Current - Continuous Drain (Id) @ 25°C	10	A
Rds On (Max) @ Id, Vgs	16 mOhm @ 10A, 4.5V	—
Vgs(th) (Max) @ Id	1	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29	nC @ 6V
Vgs (Max)	±8	V
Input Capacitance (Ciss) (Max) @ Vds	3405	pF @ 6V
Power Dissipation (Max)	2.4	W
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	6-WDFN Exposed Pad	—

Substitute Part Grouping Explanation

Substitute parts for the FDMA905P_F130 are identified based on strict electrical and mechanical parameter alignment. The substitution logic is organized into two categories:

Parametric Equivalent (Direct Replacement): The FDMA905P represents a parametric equivalent with identical electrical specifications across all critical parameters: 12V Vdss, 10A continuous drain current, 16 mOhm Rds(on), and matching gate charge characteristics. The primary distinction is product status (Active vs. Obsolete) and packaging format (Cut Tape & Digi-Reel vs. original packaging). This part maintains full compatibility with the original design without circuit modification.

Similar Substitute (Cross-Compatible Alternative): The SSM6J505NU,LF from Toshiba Semiconductor and Storage operates within the same voltage class (12V Vdss) and package family (6-WDFN Exposed Pad). While this part exhibits superior continuous drain current (12A vs. 10A) and lower Rds(on) (12 mOhm vs. 16 mOhm), it operates within acceptable parameter ranges for P-Channel MOSFET applications. The gate charge (37.6 nC) and input capacitance (2700 pF) differ from the original specification but remain within typical design tolerances for switching applications. Maximum gate voltage is reduced to ±6V compared to ±8V on the original part.

Parameter Comparison

Parameter	FDMA905P_F130 (Main)	FDMA905P (Equivalent)	SSM6J505NU,LF (Similar)
Manufacturer	onsemi	onsemi	Toshiba Semiconductor and Storage
FET Type	P-Channel	P-Channel	P-Channel
Drain to Source Voltage (Vdss)	12 V	12 V	12 V
Current - Continuous Drain (Id) @ 25°C	10 A	10 A	12 A
Rds On (Max) @ Id, Vgs	16 mOhm @ 10A, 4.5V	16 mOhm @ 10A, 4.5V	12 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1 V @ 250µA	1 V @ 250µA	1 V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 6V	29 nC @ 6V	37.6 nC @ 4.5V
Vgs (Max)	±8 V	±8 V	±6 V
Input Capacitance (Ciss) (Max) @ Vds	3405 pF @ 6V	3405 pF @ 6V	2700 pF @ 10V
Power Dissipation (Max)	2.4 W	2.4 W	1.25 W
Operating Temperature	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	150 °C (TJ)
Product Status	Obsolete	Active	Active
Package / Case	6-WDFN Exposed Pad	6-WDFN Exposed Pad	6-WDFN Exposed Pad
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

FDMA905P (onsemi) - Recommended Primary Substitute: The FDMA905P is the direct parametric equivalent to the obsolete FDMA905P_F130, offering identical electrical performance across all critical specifications. This part carries Active product status, ensuring long-term availability and supply chain continuity. The component is ROHS3 compliant with MSL 1 rating, meeting modern environmental and reliability standards. Inventory availability (27,463 pieces) supports immediate procurement. No circuit modifications are required for implementation.

SSM6J505NU,LF (Toshiba) - Secondary Cross-Compatible Alternative: The SSM6J505NU,LF provides a viable alternative when onsemi FDMA905P availability is constrained. This part maintains the same 12V voltage class and 6-WDFN package footprint, enabling direct PCB-level substitution. Superior continuous drain current (12A) and lower on-resistance (12 mOhm) deliver improved thermal performance and reduced power dissipation (1.25W vs. 2.4W). The reduced maximum gate voltage (±6V vs. ±8V) requires verification that gate drive circuits operate within this constraint. ROHS3 compliance and MSL 1 rating align with modern manufacturing requirements. Active product status ensures sustained availability.

Frequently Asked Questions (FAQ)

Q: Can the FDMA905P directly replace the obsolete FDMA905P_F130 without circuit modification?

A: Yes. The FDMA905P is a parametric equivalent with identical electrical specifications. Gate drive circuits, drain current requirements, and thermal design parameters remain unchanged. PCB layout and component placement are compatible due to identical 6-WDFN package geometry.

Q: What are the key differences between the FDMA905P and SSM6J505NU,LF?

A: Both parts operate at 12V Vdss and use the 6-WDFN package. The SSM6J505NU,LF provides higher continuous drain current (12A vs. 10A) and lower on-resistance (12 mOhm vs. 16 mOhm), resulting in reduced power dissipation. The maximum gate voltage is limited to ±6V on the Toshiba part compared to ±8V on the onsemi part. Gate charge and input capacitance differ, which may affect switching speed in high-frequency applications.

Q: Is the SSM6J505NU,LF suitable for applications requiring ±8V gate drive?

A: No. The SSM6J505NU,LF maximum gate voltage specification is ±6V. Gate drive circuits must be verified to operate within this constraint. Exceeding this specification may result in gate oxide degradation and device failure.

Q: Are both substitute parts available in the same packaging formats?

A: The FDMA905P is available in Cut Tape (CT) and Digi-Reel formats. The SSM6J505NU,LF is supplied in Tape & Reel (TR) format. Both use the 6-WDFN Exposed Pad package case, ensuring PCB compatibility. Reel format differences affect only procurement and assembly handling, not electrical or mechanical performance.

Q: What is the impact of the SSM6J505NU,LF lower power dissipation rating on thermal design?

A: The SSM6J505NU,LF 1.25W power dissipation rating is lower than the FDMA905P_F130 2.4W rating. This reflects superior on-resistance characteristics and reduced thermal generation under identical operating conditions. Thermal design margins improve with this substitution, allowing for reduced heatsinking requirements or improved reliability in thermally constrained applications.

Q: Do both substitute parts meet current environmental compliance standards?

A: Yes. Both the FDMA905P and SSM6J505NU,LF are ROHS3 compliant and REACH unaffected. Both carry MSL 1 (Unlimited) moisture sensitivity ratings, meeting modern manufacturing and storage requirements without special handling protocols.

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