FDMA291P P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDMA291P is an active P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 6.6A continuous drain current. This device is housed in a 6-MicroFET (2x2) surface mount package and is designed for applications requiring efficient switching and power management in compact form factors. The part is RoHS3 compliant and carries unlimited moisture sensitivity level (MSL 1), indicating broad applicability across industrial and commercial environments.

Equivalent and substitute parts are identified based on matching electrical performance parameters, package compatibility considerations, and regulatory compliance status. Substitution is necessary when the primary part is unavailable, when alternative packaging is required for manufacturing processes, or when design optimization calls for comparable performance characteristics from alternative manufacturers.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	6.6	A
On-Resistance (Rds On Max) @ Id, Vgs	42 mOhm @ 6.6A, 4.5V	—
Gate Threshold Voltage (Vgs(th) Max) @ Id	1	V @ 250µA
Gate Charge (Qg Max) @ Vgs	14	nC @ 4.5V
Power Dissipation (Max)	2.4	W (Ta)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	6-WDFN Exposed Pad	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the FDMA291P are qualified based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

FET Type: P-Channel topology
Drain-to-Source Voltage (Vdss): 20V minimum rating
Continuous Drain Current (Id): 6.2A or greater at 25°C
On-Resistance (Rds On): Performance within acceptable range for switching applications
Gate Threshold Voltage (Vgs(th)): Threshold compatibility for logic-level gate drive
Operating Temperature Range: -55°C to 150°C (TJ)
Surface Mount Technology: Compatible with automated assembly processes
Regulatory Compliance: RoHS3 compliant, MSL 1 rating

Package Considerations: Substitute parts may utilize different surface mount packages (6-WDFN, U-DFN2020-6, DFN1010B-6) provided they maintain electrical performance within specified tolerances and are compatible with board layout and thermal management requirements.

The DMP2066UFDE-7 and PMPB33XP,115 meet these criteria and are listed as qualified substitutes for the FDMA291P.

Parameter Comparison

Parameter	FDMA291P (onsemi)	DMP2066UFDE-7 (Diodes Inc.)	PMPB33XP,115 (NXP)
FET Type	P-Channel	P-Channel	P-Channel
Vdss (V)	20	20	20
Id @ 25°C (A)	6.6	6.2	5.5
Rds On (Max) @ Vgs 4.5V (mOhm)	42 @ 6.6A	36 @ 4.6A	37 @ 5.5A
Vgs(th) (Max) @ 250µA (V)	1.0	1.1	0.9
Qg (Max) @ 4.5V (nC)	14	14.4	23
Ciss (Max) @ 10V (pF)	1000	1537	1575
Power Dissipation (Max) (W)	2.4 (Ta)	0.66 (Ta)	1.7 (Ta) / 12.5 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150
Package	6-WDFN Exposed Pad	U-DFN2020-6 (Type E)	DFN1010B-6
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	Not specified

Engineering Selection Recommendations

FDMA291P (onsemi) — Primary Part

The FDMA291P is the reference device for this substitution analysis. It is active, in production, and widely available with 24,561 units in stock. RoHS3 compliance and MSL 1 rating support deployment in diverse manufacturing environments. The 6-WDFN package provides a compact footprint with exposed pad thermal management.

DMP2066UFDE-7 (Diodes Incorporated) — Preferred Substitute

The DMP2066UFDE-7 is an active, production device with 19,075 units in stock. It matches the FDMA291P in Vdss (20V) and provides comparable drain current (6.2A vs. 6.6A). On-resistance is superior (36 mOhm vs. 42 mOhm), and gate charge is nearly identical (14.4 nC vs. 14 nC). The U-DFN2020-6 package is a different form factor but maintains surface mount compatibility. RoHS3 compliance and MSL 1 rating are equivalent. This device is suitable for direct substitution in applications where the slightly lower current rating and different package footprint are acceptable.

PMPB33XP,115 (NXP USA Inc.) — Alternative Substitute

The PMPB33XP,115 is an active device with 32,204 units in stock. It matches Vdss (20V) but provides lower continuous drain current (5.5A vs. 6.6A). On-resistance is competitive (37 mOhm), but gate charge is significantly higher (23 nC vs. 14 nC), indicating increased switching losses. The DFN1010B-6 package differs from the FDMA291P. RoHS3 compliance is confirmed. This device is suitable for applications where the reduced current rating and higher gate charge are within design margins.

Selection Basis:

All three devices are RoHS3 compliant and carry active product status. Substitution selection depends on current requirements, package compatibility with existing PCB layouts, and thermal management constraints. The DMP2066UFDE-7 offers the closest electrical match. The PMPB33XP,115 is suitable for lower-current applications or where NXP supply chain preference exists.

Frequently Asked Questions (FAQ)

Q: Can the DMP2066UFDE-7 directly replace the FDMA291P on an existing PCB?

A: Electrical substitution is valid. However, the DMP2066UFDE-7 uses a U-DFN2020-6 package while the FDMA291P uses 6-WDFN. PCB footprints differ and must be verified for compatibility. Thermal pad dimensions and placement may also differ, requiring layout review.

Q: What is the significance of the lower drain current rating on the PMPB33XP,115?

A: The PMPB33XP,115 is rated for 5.5A continuous drain current compared to 6.6A on the FDMA291P. In applications requiring the full 6.6A rating, the PMPB33XP,115 operates closer to its maximum specification, reducing design margin. Applications with peak currents below 5.5A are unaffected.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the FET. The FDMA291P and DMP2066UFDE-7 have similar gate charge (14 nC and 14.4 nC respectively), resulting in comparable switching losses. The PMPB33XP,115 has higher gate charge (23 nC), requiring more drive energy and potentially increasing switching losses in high-frequency applications.

Q: Are all three devices suitable for high-temperature operation?

A: All three devices are rated for -55°C to 150°C (TJ) operating temperature range. Thermal management design must account for the different power dissipation ratings: FDMA291P (2.4W Ta), DMP2066UFDE-7 (0.66W Ta), and PMPB33XP,115 (1.7W Ta or 12.5W Tc). The PMPB33XP,115 offers higher power dissipation capability when measured at case temperature (Tc).

Q: What packaging considerations apply to substitution?

A: The FDMA291P uses 6-WDFN, the DMP2066UFDE-7 uses U-DFN2020-6, and the PMPB33XP,115 uses DFN1010B-6. Each package has different footprint dimensions, pad spacing, and thermal pad area. PCB layout must be verified for each substitute. Automated pick-and-place equipment settings may require adjustment for different package types.

Q: Are all substitutes RoHS3 compliant?

A: Yes. The FDMA291P, DMP2066UFDE-7, and PMPB33XP,115 are all RoHS3 compliant. The FDMA291P and DMP2066UFDE-7 carry MSL 1 (Unlimited) ratings. MSL status for the PMPB33XP,115 is not specified in the provided data.

Q: Which substitute offers the best on-resistance performance?

A: The DMP2066UFDE-7 provides the lowest on-resistance at 36 mOhm (measured at 4.6A, 4.5V Vgs), compared to 42 mOhm for the FDMA291P and 37 mOhm for the PMPB33XP,115. Lower on-resistance reduces conduction losses and heat generation during operation.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message