FDMA1027P Equivalent & Substitute Parts

Part Overview

The FDMA1027P is an active, production-status dual P-channel MOSFET array manufactured by onsemi in the PowerTrench® series. This surface-mount device integrates two P-channel MOSFETs in a 6-MicroFET (2x2) package with exposed pad, designed for logic-level gate switching applications at 20V drain-source voltage ratings. The device is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1) and REACH unaffected status.

Equivalent and substitute parts are identified to address inventory availability, supply chain continuity, or application-specific performance requirements while maintaining functional compatibility within specified electrical and mechanical parameters.

Substiute Parts

FDMA1027P

onsemiIn Stock: 22063FDMA1027P Datasheet

Current PartRFQ

PMDPB58UPE,115

Nexperia USA Inc.In Stock: 3670PMDPB58UPE,115 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDMA1027P are identified based on strict electrical and mechanical compatibility criteria. The following parameters define acceptable substitution:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): 20V minimum
• Configuration: Dual P-Channel MOSFET
• FET Feature: Logic Level Gate
• Operating Temperature Range: -55°C to 150°C minimum
• Mounting Type: Surface Mount
• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level: MSL 1 or better

Performance Parameters (Allowable Variation):

• Continuous Drain Current (Id): Equal to or greater than 3A
• On-Resistance (Rds On): Lower or equal values acceptable
• Gate Charge (Qg): Lower or equal values acceptable
• Input Capacitance (Ciss): Variation acceptable within application constraints
• Maximum Power Dissipation: Equal to or greater than 800mW

Package Considerations: Substitute parts must use surface-mount packages with exposed pad configuration. Package footprint compatibility is determined by the specific application board design and is not restricted to identical package designations when electrical parameters align.

Parameter Comparison

Engineering Selection Recommendations

PMDPB58UPE,115 (Nexperia USA Inc.) Substitution Assessment:

The PMDPB58UPE,115 meets all critical electrical and compliance requirements for substitution with the FDMA1027P:

• Both devices maintain 20V Vdss rating and dual P-channel logic-level gate configuration
• Both operate across -55°C to 150°C temperature range
• Both are RoHS3 compliant with MSL 1 rating and REACH unaffected status
• Both are surface-mount devices with exposed pad packages

Performance Characteristics: The PMDPB58UPE,115 provides enhanced continuous drain current (3.6A versus 3A) and reduced on-resistance (67 mOhm at 2A versus 120 mOhm at 3A), indicating improved switching efficiency. However, the substitute exhibits higher gate charge (9.5nC versus 6nC) and input capacitance (804pF versus 435pF), which may increase gate drive requirements and switching losses in high-frequency applications. The substitute's maximum power dissipation rating (515mW) is lower than the FDMA1027P (800mW), requiring thermal design verification for applications approaching the original device's power limits.

Compliance Status: Both devices maintain identical regulatory compliance certifications, ensuring substitution does not compromise product certification or supply chain compliance requirements.

Frequently Asked Questions (FAQ)

Q: Can the PMDPB58UPE,115 directly replace the FDMA1027P in existing designs?

A: Electrical substitution is valid based on matching Vdss, configuration, and logic-level gate features. However, package footprint differences between 6-VDFN and 6-UFDFN require PCB layout verification. Gate drive circuit performance may differ due to higher gate charge and input capacitance of the substitute. Thermal design must account for the lower maximum power dissipation rating (515mW versus 800mW).

Q: What are the key differences in switching characteristics?

A: The PMDPB58UPE,115 exhibits lower on-resistance and higher gate charge compared to the FDMA1027P. Lower on-resistance reduces conduction losses but higher gate charge increases gate drive power requirements. Higher input capacitance (804pF versus 435pF) may extend switching transition times in circuits with fixed gate drive impedance.

Q: Are both devices suitable for the same temperature range applications?

A: Yes. Both devices operate across the identical -55°C to 150°C junction temperature range, ensuring thermal compatibility in applications within this specification.

Q: What compliance certifications apply to both devices?

A: Both the FDMA1027P and PMDPB58UPE,115 are RoHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) moisture sensitivity rating. Both are classified under ECCN EAR99 and HTSUS 8541.21.0095.

Q: Does the lower power dissipation rating of the substitute affect substitution validity?

A: The substitute's 515mW maximum power rating is lower than the original device's 800mW rating. Applications operating near the original device's power limits require thermal analysis to confirm the substitute remains within safe operating conditions. For applications with lower power dissipation requirements, the substitute is suitable.

Q: Are there package footprint compatibility concerns?

A: The FDMA1027P uses 6-VDFN packaging while the PMDPB58UPE,115 uses 6-UFDFN packaging. Both are 6-pin surface-mount packages with exposed pads, but physical dimensions and pin layouts may differ. PCB layout verification is required before substitution in existing designs.