FDM606P Equivalent & Substitute Parts

Part Overview

The FDM606P is a P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 6.8A continuous drain current at 25°C. This device is packaged in an 8-MLP MicroFET surface mount configuration and is designed for applications requiring moderate power dissipation in compact form factors. The FDM606P is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and component procurement.

Substiute Parts

FDM606P

onsemiIn Stock: 1928FDM606P Datasheet

Current PartRFQ

NTHS4101PT1G

onsemiIn Stock: 19280NTHS4101PT1G Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDM606P is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: P-Channel topology required
• Drain to Source Voltage (Vdss): Minimum 20V rating
• Gate Threshold Voltage (Vgs(th)): Maximum 1.5V @ 250µA
• Gate-Source Voltage (Vgs Max): ±8V operating range
• Operating Temperature Range: -55°C to 150°C

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount
• Package Configuration: 8-pin surface mount with flat lead exposed pad or equivalent

Current Rating Consideration: The FDM606P specifies 6.8A continuous drain current. Substitute parts with lower current ratings (4.8A or less) operate within reduced current envelopes and are classified as functional substitutes for applications not requiring the full 6.8A specification.

Parameter Comparison

Engineering Selection Recommendations

NTHS4101PT1G as Substitute for FDM606P:

The NTHS4101PT1G is an active-status P-Channel MOSFET from onsemi that satisfies the core electrical parameters required for FDM606P substitution. Both devices share identical Vdss (20V), Vgs(th) maximum (1.5V @ 250µA), Vgs operating range (±8V), and temperature operating range (-55°C to 150°C).

The primary difference is continuous drain current specification: NTHS4101PT1G is rated for 4.8A versus FDM606P's 6.8A. This represents a 29% reduction in maximum continuous current capacity. On-resistance increases marginally from 30 mOhm to 34 mOhm, and gate charge increases from 30 nC to 35 nC. Power dissipation rating decreases from 1.92W to 1.3W.

Substitution Applicability:

• Applications operating at or below 4.8A continuous drain current
• Designs where the 1.3W power dissipation ceiling is acceptable
• Circuits tolerant of the 4 mOhm on-resistance increase

Compliance Status: Both devices maintain REACH Unaffected status and MSL 1 (Unlimited) moisture sensitivity classification. The NTHS4101PT1G holds active product status, ensuring ongoing availability and manufacturing support. Package differences (8-MLP MicroFET versus ChipFET™ 8-SMD) require PCB layout verification for mechanical fit and thermal performance.

Frequently Asked Questions (FAQ)

Q: Can NTHS4101PT1G directly replace FDM606P in all applications?

A: No. The NTHS4101PT1G is suitable only for applications where continuous drain current does not exceed 4.8A. If your circuit requires the full 6.8A specification of the FDM606P, this substitute is not appropriate. Verify your actual operating current before substitution.

Q: What is the impact of the 4 mOhm increase in on-resistance?

A: At 4.8A operation, the NTHS4101PT1G dissipates approximately 0.78W (4.8A² × 34 mOhm) compared to 0.55W for the FDM606P at the same current (4.8A² × 30 mOhm). This 0.23W difference is within the NTHS4101PT1G's 1.3W power dissipation rating but requires thermal design verification for your specific application.

Q: Are the package footprints compatible?

A: No. The FDM606P uses an 8-MLP MicroFET (3x2) package, while the NTHS4101PT1G uses a ChipFET™ 8-SMD package. Although both are 8-pin surface mount devices, physical dimensions and pin layouts differ. PCB redesign is required for mechanical compatibility.

Q: What is the significance of the gate charge difference (30 nC vs. 35 nC)?

A: Gate charge affects switching speed and driver circuit requirements. The 5 nC increase in NTHS4101PT1G requires slightly more charge from the gate driver but remains within typical driver capabilities. This difference is not a limiting factor for most applications.

Q: Why is FDM606P classified as obsolete?

A: Obsolete status indicates onsemi has discontinued manufacturing. The NTHS4101PT1G, with active status, represents the current-generation equivalent and is recommended for new designs requiring P-Channel 20V MOSFET functionality in the 4.8A range.

Q: Are there any compliance or regulatory differences between these parts?

A: Both devices maintain identical REACH Unaffected status and MSL 1 classification. No regulatory or compliance barriers exist for substitution from a compliance perspective. Verify your specific application's regulatory requirements independently.

Q: What happens if I operate NTHS4101PT1G above 4.8A?

A: Operation above the rated 4.8A continuous drain current violates the device specification and may result in thermal runaway, reduced device lifetime, or failure. The device is not rated for 6.8A operation. Do not exceed the specified 4.8A limit.