FDI3652 Equivalent & Substitute Parts

Part Overview

The FDI3652 is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with continuous drain current of 9A at Ta and 61A at Tc. This device is packaged in TO-262 (I2PAK) through-hole configuration and is part of the PowerTrench® series. The FDI3652 is classified as Obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement requirements.

Substiute Parts

FDI3652
onsemiIn Stock: 1437FDI3652 Datasheet
FDI3652
Current Part
FDP3652
onsemiIn Stock: 15634FDP3652 Datasheet
FDP3652
Similar
IPI147N12N3GAKSA1
Infineon TechnologiesIn Stock: 758IPI147N12N3GAKSA1 Datasheet
IPI147N12N3GAKSA1
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current @ 25°C (Ta) 9 A
Continuous Drain Current @ 25°C (Tc) 61 A
Rds On (Max) @ 61A, 10V 16 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 53 nC
Power Dissipation (Max) 150 W
Operating Temperature Range -55 to 175 °C
Mounting Type Through Hole
Package TO-262 (I2PAK)

Substitute Part Grouping Explanation

Substitution of the FDI3652 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss) must equal or exceed 100V
  • Continuous drain current (Id) must meet or exceed 9A at Ta and 61A at Tc
  • On-state resistance (Rds On) must not exceed 16 mOhm at rated current and gate voltage
  • Gate threshold voltage (Vgs(th)) must be compatible with 4V specification
  • Gate charge (Qg) and input capacitance (Ciss) must support circuit switching requirements
  • Maximum gate voltage (Vgs) must accommodate ±20V operation
  • Power dissipation capability must support 150W thermal requirements
  • Operating temperature range must span -55°C to 175°C

Mechanical Compatibility Criteria:

  • Mounting type must be through-hole
  • Package footprint must be compatible with TO-262 (I2PAK) or equivalent land pattern

Substitute parts are grouped based on whether they maintain these electrical specifications while potentially offering different packaging options or improved product status for new designs.

Parameter Comparison

Parameter FDI3652 (Main) FDP3652 IPI147N12N3GAKSA1
Manufacturer onsemi onsemi Infineon Technologies
FET Type N-Channel N-Channel N-Channel
Vdss (V) 100 100 120
Id @ Ta (A) 9 9 56
Id @ Tc (A) 61 61
Rds On (Max) @ 10V (mOhm) 16 16 14.7
Vgs(th) @ Id (V) 4 @ 250µA 4 @ 250µA 4 @ 61µA
Gate Charge @ 10V (nC) 53 53 49
Vgs (Max) (V) ±20 ±20 ±20
Ciss @ Vds (pF) 2880 @ 25V 2880 @ 25V 3220 @ 60V
Power Dissipation (Max) (W) 150 150 107
Operating Temperature (°C) -55 to 175 -55 to 175 -55 to 175
Mounting Type Through Hole Through Hole Through Hole
Package TO-262 (I2PAK) TO-220-3 TO-262-3
Product Status Obsolete Not For New Designs Discontinued at DiGi Electronics

Engineering Selection Recommendations

FDP3652 (onsemi): The FDP3652 maintains identical electrical specifications to the FDI3652, including Vdss, Id, Rds On, Vgs(th), gate charge, and power dissipation. The primary difference is packaging: FDP3652 uses TO-220-3 instead of TO-262 (I2PAK). This substitution is electrically equivalent but requires PCB layout modification to accommodate the different footprint. FDP3652 carries "Not For New Designs" status, indicating limited long-term availability. This part is suitable for legacy system maintenance where TO-220-3 footprint compatibility exists.

IPI147N12N3GAKSA1 (Infineon Technologies): The IPI147N12N3GAKSA1 offers higher voltage rating (120V vs. 100V) and superior on-state resistance (14.7 mOhm vs. 16 mOhm), with lower gate charge (49 nC vs. 53 nC). However, power dissipation is reduced to 107W compared to 150W. The continuous drain current specification differs: 56A at Ta versus 9A/61A at Ta/Tc for the FDI3652. This part is packaged in TO-262-3, maintaining mechanical compatibility with the original FDI3652. IPI147N12N3GAKSA1 is classified as discontinued at DiGi Electronics. This substitution is suitable for applications where higher voltage margin and lower on-state losses are beneficial, provided thermal design accommodates the reduced power dissipation rating.

Both substitute parts are through-hole mounted and support the full operating temperature range of -55°C to 175°C. Selection between FDP3652 and IPI147N12N3GAKSA1 depends on specific application requirements regarding package footprint, voltage margin, and thermal constraints.

Frequently Asked Questions (FAQ)

Q: Can FDP3652 directly replace FDI3652 without circuit modification?

A: FDP3652 is electrically equivalent to FDI3652 across all critical parameters. However, FDP3652 uses TO-220-3 packaging while FDI3652 uses TO-262 (I2PAK). Direct PCB substitution is not possible without layout redesign. Both packages are through-hole mounted, but the pin configuration and thermal pad dimensions differ.

Q: What is the primary advantage of IPI147N12N3GAKSA1 over FDI3652?

A: IPI147N12N3GAKSA1 provides higher drain-to-source voltage (120V vs. 100V), lower on-state resistance (14.7 mOhm vs. 16 mOhm), and lower gate charge (49 nC vs. 53 nC). These characteristics reduce conduction losses and switching losses. The trade-off is reduced maximum power dissipation (107W vs. 150W).

Q: Are all three parts suitable for new designs?

A: No. FDI3652 is classified as Obsolete, FDP3652 is marked "Not For New Designs," and IPI147N12N3GAKSA1 is discontinued at DiGi Electronics. None of these parts are recommended for new design implementations. These substitutes are provided for legacy system support and maintenance only.

Q: Do all substitute parts maintain the same operating temperature range?

A: Yes. FDI3652, FDP3652, and IPI147N12N3GAKSA1 all operate across -55°C to 175°C junction temperature range.

Q: What is the significance of the different continuous drain current specifications?

A: FDI3652 and FDP3652 specify 9A at Ta and 61A at Tc, reflecting different measurement conditions. IPI147N12N3GAKSA1 specifies 56A at Ta only. These ratings indicate the device's current-carrying capability under different thermal conditions. The higher current rating of IPI147N12N3GAKSA1 at Ta suggests superior thermal performance at ambient temperature.

Q: Can FDI3652 be used in applications designed for IPI147N12N3GAKSA1?

A: FDI3652 has lower voltage rating (100V vs. 120V) and higher on-state resistance (16 mOhm vs. 14.7 mOhm). In applications requiring 120V operation, FDI3652 is not suitable. In applications designed for 100V operation, IPI147N12N3GAKSA1 provides margin but may introduce unnecessary cost and complexity.

Q: What packaging considerations apply to each substitute?

A: FDI3652 and IPI147N12N3GAKSA1 both use TO-262 (I2PAK) packaging with compatible footprints. FDP3652 uses TO-220-3 packaging, which has a different pin layout and thermal pad configuration. PCB redesign is required to accommodate FDP3652 in place of FDI3652.

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