FDI3632 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDI3632 is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 12A continuous drain current at 25°C ambient temperature and 80A at case temperature. The device is housed in a TO-262 (I2PAK) through-hole package and delivers 310W maximum power dissipation at case temperature. This part is classified as obsolete, making equivalent and substitute components necessary for ongoing design support and production continuity. The FDI3632 belongs to the PowerTrench® series and operates across a temperature range of -55°C to 175°C junction temperature.

Substiute Parts

FDI3632

onsemiIn Stock: 1624FDI3632 Datasheet

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AOB288L

Alpha & Omega Semiconductor Inc.In Stock: 10546AOB288L Datasheet

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BUK969R3-100E,118

Nexperia USA Inc.In Stock: 940BUK969R3-100E,118 Datasheet

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IPI076N12N3GAKSA1

Infineon TechnologiesIn Stock: 1337IPI076N12N3GAKSA1 Datasheet

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IPI086N10N3GXKSA1

Infineon TechnologiesIn Stock: 1156IPI086N10N3GXKSA1 Datasheet

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SUM70090E-GE3

Vishay SiliconixIn Stock: 1300SUM70090E-GE3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDI3632 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) must be equal to or greater than 100V
• Continuous Drain Current (Tc) must be equal to or greater than 80A
• On-Resistance (Rds On) must be equal to or lower than 9mOhm at rated conditions
• Gate Threshold Voltage (Vgs(th)) must be compatible with 4V specification
• Operating temperature range must encompass -55°C to 175°C
• Gate charge and input capacitance characteristics must support equivalent switching performance

Mechanical Compatibility Criteria:

• Package type must be TO-262 (I2PAK) through-hole configuration for direct board-level replacement
• Pin configuration must match TO-262-3 Long Leads standard
• Mounting type must be through-hole

Substitute parts are grouped into two categories:

Category 1: Direct Through-Hole Replacements (Same Package) Parts maintaining TO-262 (I2PAK) through-hole packaging with equivalent or superior electrical ratings.

Category 2: Functional Equivalents (Different Package) Parts with equivalent or superior electrical ratings but different package types (surface mount D2PAK/TO-263), suitable for circuit redesign or alternative PCB layouts.

Parameter Comparison

Engineering Selection Recommendations

For Direct Through-Hole Package Replacement:

The IPI086N10N3GXKSA1 (Infineon OptiMOS™) and IPI076N12N3GAKSA1 (Infineon OptiMOS™) are the primary through-hole alternatives. Both maintain the TO-262 (I2PAK) package configuration required for direct PCB substitution without layout modification.

The IPI086N10N3GXKSA1 provides equivalent 100V/80A ratings with 8.6mOhm on-resistance, lower gate charge (55nC versus 110nC), and reduced input capacitance (3980pF versus 6000pF). This device is active and ROHS3 compliant.

The IPI076N12N3GAKSA1 offers enhanced voltage rating (120V) and higher current capability (100A at case temperature) with superior on-resistance (7.6mOhm). This device is active and ROHS3 compliant, providing design margin for higher-stress applications.

Both Infineon devices are manufactured under the OptiMOS™ series and support the full operating temperature range (-55°C to 175°C).

For Surface Mount Package Alternatives:

The BUK969R3-100E,118 (Nexperia TrenchMOS™) provides 100V/100A capability in D2PAK surface mount package. This device is AEC-Q101 qualified for automotive applications and ROHS3 compliant. On-resistance is 8.9mOhm at 10V.

The SUM70090E-GE3 (Vishay ThunderFET®) offers 100V/50A in D2PAK surface mount package with 8.9mOhm on-resistance and significantly reduced gate charge (50nC) and input capacitance (1950pF). This device is ROHS3 compliant and suitable for applications requiring lower switching losses.

The AOB288L (Alpha & Omega Semiconductor) provides 80V/46A in D2PAK surface mount package. This device has lower voltage rating and current capability but offers reduced gate charge (38nC) and minimal input capacitance (1871pF). ROHS3 compliant.

Compliance and Status:

All substitute parts listed are active products with current manufacturing support. The Infineon devices (IPI086N10N3GXKSA1 and IPI076N12N3GAKSA1) are recommended as primary replacements due to package compatibility and active product status. The Nexperia BUK969R3-100E,118 is recommended for applications requiring automotive qualification (AEC-Q101).

Frequently Asked Questions (FAQ)

Q: Can the IPI086N10N3GXKSA1 directly replace the FDI3632 without PCB modification?

A: Yes. The IPI086N10N3GXKSA1 maintains the TO-262 (I2PAK) through-hole package with identical pin configuration. Electrical ratings (100V/80A) match the FDI3632 specification. No PCB layout changes are required for direct substitution.

Q: What is the difference between the IPI086N10N3GXKSA1 and IPI076N12N3GAKSA1?

A: The IPI086N10N3GXKSA1 is rated 100V/80A with 8.6mOhm on-resistance. The IPI076N12N3GAKSA1 is rated 120V/100A with 7.6mOhm on-resistance. Both use TO-262 (I2PAK) through-hole packaging. The IPI076N12N3GAKSA1 provides higher voltage and current margins suitable for demanding applications.

Q: Why are surface mount alternatives (D2PAK) listed if the FDI3632 is through-hole?

A: Surface mount alternatives are provided for circuit redesign scenarios where PCB layout can be modified. These parts offer equivalent or superior electrical performance and are included for design flexibility. Direct through-hole replacements (Infineon IPI series) are recommended for existing PCB designs.

Q: Is the BUK969R3-100E,118 suitable for automotive applications?

A: Yes. The BUK969R3-100E,118 carries AEC-Q101 automotive qualification and is rated for -55°C to 175°C operating temperature. This device is suitable for automotive and industrial applications requiring qualified components.

Q: What does ROHS3 compliance mean for these substitute parts?

A: ROHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive 3 requirements, restricting lead, cadmium, mercury, and other hazardous materials. All listed substitute parts are ROHS3 compliant, ensuring environmental and regulatory compliance for new designs.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The FDI3632 has 110nC gate charge. Substitute parts range from 38nC to 101nC. Lower gate charge reduces switching losses and driver power requirements. The IPI086N10N3GXKSA1 (55nC) and SUM70090E-GE3 (50nC) provide reduced switching losses compared to the original device.

Q: Can the AOB288L replace the FDI3632 in all applications?

A: No. The AOB288L is rated 80V/46A, which is lower than the FDI3632 specification (100V/80A). This device is suitable only for applications with lower voltage and current requirements. For equivalent performance, use IPI086N10N3GXKSA1 or IPI076N12N3GAKSA1.

Q: What is the significance of on-resistance (Rds On) in MOSFET selection?

A: On-resistance determines conduction losses and heat generation. Lower on-resistance reduces power dissipation. The FDI3632 specifies 9mOhm at 80A/10V. Substitute parts range from 7.6mOhm to 8.9mOhm, all meeting or exceeding the original specification. Lower on-resistance improves efficiency and thermal performance.

Q: Are all substitute parts available in the same quantities as the FDI3632?

A: Inventory levels vary. The FDI3632 has 1560 pieces in stock. Substitute parts have varying availability: IPI086N10N3GXKSA1 (1142 pcs), IPI076N12N3GAKSA1 (1239 pcs), BUK969R3-100E,118 (904 pcs), SUM70090E-GE3 (1251 pcs), and AOB288L (10465 pcs). Verify current inventory for production requirements.