FDI045N10A MOSFET N-Channel 100V 120A Equivalent & Substitute Parts

Part Overview

The FDI045N10A is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 120A continuous drain current at 25°C. This device is housed in a TO-262 (I2PAK) through-hole package and is part of the PowerTrench® series. The FDI045N10A is currently listed as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain electrical performance within the specified parameter ranges while accommodating packaging and availability constraints.

Substiute Parts

FDI045N10A

onsemiIn Stock: 2380FDI045N10A Datasheet

Current PartRFQ

FDI045N10A-F102

onsemiIn Stock: 1211FDI045N10A-F102 Datasheet

Parametric EquivalentRFQ

IPI045N10N3GXKSA1

Infineon TechnologiesIn Stock: 2037IPI045N10N3GXKSA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDI045N10A are classified based on electrical parameter compatibility and product availability status. The substitution logic is determined by the following critical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): 100V minimum
• On-State Resistance (Rds On): 4.5mOhm maximum at specified conditions
• Gate Threshold Voltage (Vgs(th)): Within ±20V gate voltage range
• Operating Temperature Range: -55°C to 175°C minimum
• Package Type: TO-262 (I2PAK) through-hole configuration

Substitution Categories:

Parametric Equivalent: FDI045N10A-F102 maintains identical electrical specifications and is manufactured by onsemi. This part differs only in packaging format (Tube vs. standard packaging) and product status (Active vs. Obsolete).

Similar Equivalent: IPI045N10N3GXKSA1 is manufactured by Infineon Technologies and operates within the same voltage and package class. This part exhibits variations in continuous drain current (100A vs. 120A), power dissipation (214W vs. 263W), and gate charge characteristics (117nC vs. 74nC), requiring application-level verification of current and thermal requirements.

Parameter Comparison

Engineering Selection Recommendations

FDI045N10A-F102 (onsemi): This part is the direct parametric equivalent and is recommended as the primary substitute. It maintains all electrical specifications of the original FDI045N10A while offering Active product status, ensuring long-term availability and support. The part is ROHS3 compliant and carries identical electrical ratings. The only difference is packaging format (Tube), which does not affect electrical performance or board-level compatibility.

IPI045N10N3GXKSA1 (Infineon Technologies): This part operates within the same voltage class and package family but exhibits reduced continuous drain current (100A vs. 120A) and lower maximum power dissipation (214W vs. 263W). The gate charge is higher (117nC vs. 74nC), which may affect switching speed characteristics. This part is suitable for applications where the 100A current rating is sufficient and thermal dissipation requirements do not exceed 214W. Both substitute parts are ROHS3 compliant and REACH unaffected, meeting modern regulatory requirements.

Frequently Asked Questions (FAQ)

Q: Can FDI045N10A-F102 be used as a direct replacement for FDI045N10A?

A: Yes. FDI045N10A-F102 is a parametric equivalent with identical electrical specifications. The parts differ only in packaging format (Tube) and product status (Active vs. Obsolete). No circuit modifications are required for substitution.

Q: What are the limitations of using IPI045N10N3GXKSA1 as a substitute?

A: The IPI045N10N3GXKSA1 has a lower continuous drain current rating (100A vs. 120A) and reduced maximum power dissipation (214W vs. 263W). Applications requiring the full 120A current capacity or thermal dissipation above 214W must use FDI045N10A-F102. The higher gate charge (117nC vs. 74nC) may result in slower switching transitions.

Q: Are both substitute parts compatible with the original TO-262 (I2PAK) footprint?

A: Yes. Both FDI045N10A-F102 and IPI045N10N3GXKSA1 use TO-262-based packages (I2PAK and PG-TO262-3 respectively) with identical pin configurations and through-hole mounting, ensuring PCB compatibility without layout modifications.

Q: What compliance certifications apply to the substitute parts?

A: Both FDI045N10A-F102 and IPI045N10N3GXKSA1 are ROHS3 compliant and REACH unaffected. These certifications meet current regulatory requirements for electronic components in most markets.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. FDI045N10A-F102 has 74nC, while IPI045N10N3GXKSA1 has 117nC. Higher gate charge requires more driver current or longer switching times. If gate drive circuitry is optimized for 74nC, the higher gate charge of the Infineon part may result in slower switching or require driver circuit adjustments.

Q: What is the difference between Rds On specifications at different gate voltages?

A: Both FDI045N10A and FDI045N10A-F102 specify Rds On at 10V gate drive. IPI045N10N3GXKSA1 specifies Rds On at both 6V and 10V drive voltages. At 10V, all three parts maintain 4.5mOhm maximum on-state resistance at 100A, ensuring equivalent conduction losses under standard drive conditions.

Q: Are there inventory considerations for selecting a substitute?

A: FDI045N10A-F102 has 1193 pieces in stock, while IPI045N10N3GXKSA1 has 1994 pieces available. Both parts are in active production. Selection should prioritize electrical compatibility with application requirements rather than inventory levels alone.