FDI038AN06A0 Equivalent & Substitute Parts

Part Overview

The FDI038AN06A0 is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 17A continuous drain current at Ta and 80A at Tc. This device is packaged in TO-262 (I2PAK) through-hole configuration and is part of the PowerTrench® series. The part is currently listed as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and procurement planning. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package form factor.

Substiute Parts

FDI038AN06A0

onsemiIn Stock: 2146FDI038AN06A0 Datasheet

Current PartRFQ

FDI030N06

onsemiIn Stock: 2067FDI030N06 Datasheet

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IRFSL3206PBF

Infineon TechnologiesIn Stock: 1822IRFSL3206PBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDI038AN06A0 are qualified based on the following electrical and mechanical parameters:

Voltage Rating Compatibility: All substitute parts must maintain the 60V Vdss rating to ensure safe operation in the same circuit topology.

Current Handling: Substitute parts must support continuous drain current at Tc equal to or greater than 80A to maintain or exceed the thermal performance envelope of the original device.

On-State Resistance (Rds On): Substitute parts must demonstrate Rds On values at comparable gate drive voltages (10V) that do not exceed the original specification, ensuring equivalent or improved efficiency characteristics.

Gate Charge (Qg): Substitute parts must maintain gate charge specifications within acceptable ranges to preserve gate drive circuit performance and switching characteristics.

Package and Mounting: All substitute parts must use TO-262 (I2PAK) through-hole packaging to ensure mechanical and thermal interface compatibility with existing PCB designs.

Operating Temperature Range: Substitute parts must support the full -55°C to 175°C operating temperature range.

Compliance: All substitute parts must maintain RoHS3 compliance and REACH unaffected status.

Parameter Comparison

Engineering Selection Recommendations

FDI030N06 (onsemi): This substitute part maintains the same 60V voltage rating and TO-262 (I2PAK) package configuration as the FDI038AN06A0. The FDI030N06 provides 120A continuous drain current at Tc, exceeding the original 80A specification. On-state resistance is improved at 3.2 mOhm compared to 3.8 mOhm. Gate charge increases to 151 nC, which may require gate drive circuit evaluation. The part is listed as Last Time Buy, indicating limited future availability. RoHS3 compliance and REACH unaffected status are maintained.

IRFSL3206PBF (Infineon Technologies): This substitute part is from the HEXFET® series and maintains 60V voltage rating with 120A continuous drain current at Tc. The IRFSL3206PBF offers superior on-state resistance at 3 mOhm and is packaged in TO-262 configuration compatible with existing through-hole designs. Gate charge is 170 nC, the highest among the three parts. Power dissipation is rated at 300W, comparable to the original 310W specification. This part maintains Active product status, ensuring long-term availability. RoHS3 compliance and REACH unaffected status are confirmed.

Both substitute parts exceed the electrical performance of the obsolete FDI038AN06A0 while maintaining package compatibility and compliance certifications. Selection between FDI030N06 and IRFSL3206PBF should be based on gate drive circuit capability to accommodate higher gate charge values and long-term supply chain requirements.

Frequently Asked Questions (FAQ)

Q: Can the FDI030N06 directly replace the FDI038AN06A0 in existing designs?

A: The FDI030N06 maintains the same 60V voltage rating, TO-262 (I2PAK) package, and through-hole mounting configuration. The higher continuous drain current (120A vs. 80A) and improved on-state resistance (3.2 mOhm vs. 3.8 mOhm) provide enhanced performance. Gate charge increases from 124 nC to 151 nC, requiring verification that the gate drive circuit can supply the additional charge without exceeding maximum gate voltage limits.

Q: What is the primary difference between the FDI030N06 and IRFSL3206PBF?

A: Both parts provide 120A continuous drain current at Tc and 60V voltage rating in TO-262 packaging. The IRFSL3206PBF offers lower on-state resistance (3 mOhm vs. 3.2 mOhm) and maintains Active product status for long-term availability. The FDI030N06 is from onsemi's PowerTrench® series and is listed as Last Time Buy. Gate charge is higher in the IRFSL3206PBF (170 nC vs. 151 nC).

Q: Are all three parts compatible with the same PCB layout?

A: Yes. All three parts use TO-262 (I2PAK) through-hole packaging with identical pin configurations and mechanical dimensions. PCB layouts designed for the FDI038AN06A0 accommodate both substitute parts without modification to the footprint or mounting hardware.

Q: What compliance certifications apply to these substitute parts?

A: All three parts maintain RoHS3 compliance and REACH unaffected status. These certifications ensure compatibility with environmental and regulatory requirements applicable to the original FDI038AN06A0.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. Higher gate charge requires the gate drive circuit to supply more current or operate for longer duration. The FDI038AN06A0 specifies 124 nC, while substitutes range from 151 nC to 170 nC. Gate drive circuits must be evaluated to confirm they can deliver the required charge within acceptable switching time parameters.

Q: Is the FDI030N06 suitable for new designs given its Last Time Buy status?

A: The FDI030N06 is appropriate for designs with limited production volumes or near-term manufacturing schedules. For new designs with extended production lifecycles, the IRFSL3206PBF is recommended due to its Active product status, ensuring availability throughout the design's commercial lifetime.