FDH600 Equivalent & Substitute Parts

Part Overview

The FDH600 is a general-purpose rectifier diode manufactured by onsemi, rated for 50 V DC reverse voltage and 200 mA average rectified current in a DO-35 through-hole package. This part is classified as obsolete, making equivalent and substitute components necessary for ongoing design support and procurement.

The FDH600 operates with a maximum forward voltage of 1 V at 200 mA, reverse recovery time of 4 ns, and reverse leakage current of 100 nA at 50 V. Its small-signal speed classification and thermal rating to 175°C support general-purpose rectification applications in legacy and new designs requiring compatible electrical characteristics.

Substiute Parts

FDH600
onsemiIn Stock: 948FDH600 Datasheet
FDH600
Current Part
1N4447
Microchip TechnologyIn Stock: 12381N4447 Datasheet
1N4447
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1N914B
Taiwan Semiconductor CorporationIn Stock: 202141N914B Datasheet
1N914B
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1N916
NTE Electronics, IncIn Stock: 11291N916 Datasheet
1N916
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1N916B
Fairchild SemiconductorIn Stock: 20361N916B Datasheet
1N916B
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1N4454
Microchip TechnologyIn Stock: 103971N4454 Datasheet
1N4454
Parametric Equivalent
1N4149
Microchip TechnologyIn Stock: 8871N4149 Datasheet
1N4149
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1N4150-1
Microchip TechnologyIn Stock: 38761N4150-1 Datasheet
1N4150-1
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1N4150TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 102371N4150TR Datasheet
1N4150TR
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1N4446
Microchip TechnologyIn Stock: 239891N4446 Datasheet
1N4446
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1N4454-1
Microchip TechnologyIn Stock: 11051N4454-1 Datasheet
1N4454-1
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1N6643
Microchip TechnologyIn Stock: 9571N6643 Datasheet
1N6643
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BAW62,133
NXP USA Inc.In Stock: 738BAW62,133 Datasheet
BAW62,133
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BAW62,143
NXP USA Inc.In Stock: 1092BAW62,143 Datasheet
BAW62,143
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1N4454
Microchip TechnologyIn Stock: 103971N4454 Datasheet
1N4454
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 200 mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 200 mA V
Reverse Recovery Time (trr) 4 ns
Current - Reverse Leakage @ Vr 100 nA @ 50 V nA
Capacitance @ Vr, F 2.5 pF @ 0V, 1MHz pF
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Operating Temperature - Junction (Max) 175 °C
Speed Classification Small Signal ≤ 200mA (Io), Any Speed

Substitute Part Grouping Explanation

Substitute parts for the FDH600 are grouped based on electrical parameter compatibility within the small-signal rectifier diode category. The primary substitution criteria are:

Critical Parameters for Substitution:

  • Voltage - DC Reverse (Vr) (Max): Must equal or exceed 50 V
  • Current - Average Rectified (Io): Must equal or exceed 200 mA
  • Mounting Type: Through Hole (required)
  • Package / Case: DO-35 or DO-204AH (required)
  • Speed Classification: Small Signal ≤ 200mA (Io), Any Speed (required)
  • Reverse Recovery Time (trr): 4 ns (required)

Parametric Equivalents meet all critical electrical and mechanical parameters with identical or superior ratings. These parts are direct functional replacements.

Similar Substitutes exceed the FDH600 voltage rating (75 V or 100 V) while maintaining 200 mA current capacity and identical package/speed specifications. These parts are electrically compatible and provide enhanced voltage margin.

Parts with higher current ratings (300 mA) or different speed classifications are included where voltage, current, and package specifications align with the FDH600 functional requirements.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [mA] Vf (Max) @ If [V] trr [ns] Ir @ Vr [nA] Package Product Status
FDH600 onsemi 50 200 1 @ 200 mA 4 100 @ 50 V DO-35 Obsolete
1N4150-1 Microchip Technology 50 200 1 @ 200 mA 4 100 @ 50 V DO-35 Active
1N4150TR Vishay General Semiconductor 50 300 1 @ 200 mA 4 100 @ 50 V DO-35 Active
1N4149 Microchip Technology 75 200 1 @ 10 mA 4 20 nA @ 20 V DO-35 Active
1N4454 Microchip Technology 75 200 1 @ 10 mA 4 100 nA @ 50 V DO-35 Active
1N4454-1 Microchip Technology 75 200 1 @ 10 mA 4 100 nA @ 50 V DO-35 Active
1N4446 Microchip Technology 75 200 1 @ 20 mA 4 25 nA @ 20 V DO-35 Active
1N4447 Microchip Technology 75 200 1 @ 20 mA 4 25 nA @ 20 V DO-35 Active
1N916 NTE Electronics, Inc 100 200 1 @ 10 mA 4 5 µA @ 75 V DO-35 Active
1N916B Fairchild Semiconductor 100 200 1 @ 20 mA 4 5 µA @ 75 V DO-35 Active
1N914B Taiwan Semiconductor Corporation 100 150 1 @ 100 mA 4 5 µA @ 75 V DO-35 Active

Engineering Selection Recommendations

Parametric Equivalents (Direct Replacements):

The 1N4150-1 (Microchip Technology) is the primary parametric equivalent to the FDH600. It matches all electrical specifications including 50 V reverse voltage, 200 mA current rating, 1 V forward voltage at 200 mA, 4 ns reverse recovery time, and 100 nA reverse leakage at 50 V. The 1N4150-1 is active in production and available in bulk packaging, providing immediate procurement advantage over the obsolete FDH600.

The 1N4150TR (Vishay General Semiconductor) provides identical voltage and speed characteristics with enhanced current capacity (300 mA versus 200 mA). This part is ROHS3 compliant and active in production, offering superior thermal margin for applications approaching the FDH600 current limit.

Higher Voltage Substitutes (75 V Rating):

The 1N4454, 1N4454-1, 1N4149, 1N4446, and 1N4447 all provide 75 V reverse voltage rating while maintaining 200 mA current capacity and DO-35 packaging. These parts are suitable for applications where the FDH600 50 V rating is adequate but higher voltage margin is beneficial. The 1N4454 and 1N4454-1 maintain the 100 nA reverse leakage specification of the FDH600, providing closest electrical correlation. All are active in production.

Higher Voltage Substitutes (100 V Rating):

The 1N916, 1N916B, and 1N914B provide 100 V reverse voltage rating in DO-35 packages. The 1N916 and 1N916B maintain 200 mA current capacity, while the 1N914B is rated for 150 mA. These parts are suitable for applications requiring maximum voltage margin. The 1N916B (Fairchild Semiconductor) is active in production with bulk packaging availability.

Compliance Considerations:

The 1N4150TR is ROHS3 compliant. The 1N914B is ROHS3 compliant. Most substitute parts are RoHS non-compliant but REACH unaffected. All parts carry EAR99 ECCN classification and HTSUS code 8541.10.0070 or 8541.10.0080, consistent with the FDH600 regulatory profile.

Frequently Asked Questions (FAQ)

Q: Can the 1N4150-1 directly replace the FDH600 in all applications?

A: Yes. The 1N4150-1 matches all electrical parameters of the FDH600: 50 V reverse voltage, 200 mA current, 1 V forward voltage at 200 mA, 4 ns reverse recovery time, and 100 nA reverse leakage at 50 V. Both use DO-35 through-hole packaging. The 1N4150-1 is active in production, eliminating obsolescence risk.

Q: What is the difference between the 1N4454 and 1N4454-1?

A: Both parts are manufactured by Microchip Technology with identical electrical specifications: 75 V reverse voltage, 200 mA current, 4 ns reverse recovery time, and 100 nA reverse leakage at 50 V. The primary difference is operating temperature range: 1N4454 operates from −65°C to 175°C, while 1N4454-1 operates from −65°C to 175°C. Both are suitable substitutes for the FDH600 in applications requiring higher voltage margin.

Q: Why do some substitute parts have higher voltage ratings than the FDH600?

A: Higher voltage-rated diodes (75 V and 100 V) are electrically compatible with the FDH600 because they maintain the required current capacity (200 mA), package type (DO-35), and speed classification (small signal). The higher voltage rating provides additional safety margin in applications where reverse voltage stress may approach the FDH600 50 V limit. These parts are suitable direct substitutes.

Q: Is the 1N914B suitable as a substitute despite its 150 mA current rating?

A: The 1N914B is suitable for applications where the circuit current requirement does not exceed 150 mA. If the application requires the full 200 mA capacity of the FDH600, the 1N914B is not appropriate. For applications operating below 150 mA, the 1N914B provides 100 V reverse voltage rating and ROHS3 compliance in DO-35 packaging.

Q: What packaging options are available for substitute parts?

A: All substitute parts listed are available in DO-35 through-hole axial packaging, matching the FDH600 mechanical form factor. Packaging variants include bulk, cut tape (CT), and bag options depending on the specific part number and manufacturer. Verify packaging availability with the supplier for your procurement quantity.

Q: Are there compliance differences between substitute parts?

A: Most substitute parts are RoHS non-compliant but REACH unaffected. The 1N4150TR and 1N914B are ROHS3 compliant. All parts carry EAR99 ECCN classification. For applications requiring RoHS compliance, the 1N4150TR or 1N914B are required selections.

Q: Can I use a 300 mA rated diode (1N4150TR) in place of the 200 mA FDH600?

A: Yes. The 1N4150TR is rated for 300 mA average rectified current, which exceeds the FDH600 200 mA requirement. All other electrical parameters match: 50 V reverse voltage, 1 V forward voltage at 200 mA, 4 ns reverse recovery time, and 100 nA reverse leakage at 50 V. The higher current rating provides thermal margin without affecting circuit operation.

Q: What is the reverse recovery time significance for substitution?

A: All listed substitute parts maintain the 4 ns reverse recovery time of the FDH600, which is critical for small-signal rectification applications. This parameter determines switching speed and is essential for maintaining circuit performance in high-frequency or fast-switching applications. Substitutes with different reverse recovery times are not included in this list.

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