FDH50N50 N-Channel 500V 48A MOSFET Equivalent & Substitute Parts

Part Overview

The FDH50N50 is an N-Channel 500V 48A MOSFET manufactured by onsemi in the UniFET™ series, housed in a TO-247-3 through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement. The part delivers 625W maximum power dissipation and operates across a temperature range of -55°C to 150°C (TJ). Due to its obsolete status, active alternative components with comparable electrical and mechanical characteristics are required for system continuity.

Substiute Parts

FDH50N50
onsemiIn Stock: 28999FDH50N50 Datasheet
FDH50N50
Current Part
FDH50N50-F133
onsemiIn Stock: 1410FDH50N50-F133 Datasheet
FDH50N50-F133
Parametric Equivalent
APT5014BLLG
Microchip TechnologyIn Stock: 2243APT5014BLLG Datasheet
APT5014BLLG
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IXFR48N50Q
IXYSIn Stock: 14314IXFR48N50Q Datasheet
IXFR48N50Q
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STW28NM50N
STMicroelectronicsIn Stock: 15231STW28NM50N Datasheet
STW28NM50N
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STW32NM50N
STMicroelectronicsIn Stock: 2517STW32NM50N Datasheet
STW32NM50N
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STW45NM50
STMicroelectronicsIn Stock: 3956STW45NM50 Datasheet
STW45NM50
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 48 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 105 mOhm @ 24A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id 5 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 137 nC @ 10V
Power Dissipation (Max) 625 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-247-3 Through Hole
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the FDH50N50 is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

  • Drain to Source Voltage (Vdss): 500V minimum
  • Continuous Drain Current (Id): 48A or greater at 25°C
  • Gate Drive Voltage: 10V
  • Package Type: TO-247-3 through-hole configuration
  • Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Factors:

  • Rds On (Max) @ 10V: 105mOhm or lower ensures equivalent switching performance
  • Gate Charge (Qg): 137nC or lower maintains gate drive circuit compatibility
  • Power Dissipation: 625W or greater supports thermal requirements

Parts are classified into two categories:

Parametric Equivalent: FDH50N50-F133 matches all electrical specifications and package requirements of the main part, differing only in product status (Active vs. Obsolete) and packaging format (Tube vs. unspecified).

Similar Alternatives: STW45NM50, STW32NM50N, STW28NM50N, APT5014BLLG, and IXFR48N50Q provide functional substitution with trade-offs in current rating, power dissipation, or gate charge characteristics. These parts maintain 500V Vdss and TO-247-3 packaging but operate at reduced current or power levels.

Parameter Comparison

Parameter FDH50N50 FDH50N50-F133 STW45NM50 STW32NM50N STW28NM50N APT5014BLLG IXFR48N50Q
Manufacturer onsemi onsemi STMicroelectronics STMicroelectronics STMicroelectronics Microchip Technology IXYS
Vdss (V) 500 500 500 500 500 500 500
Id @ 25°C (A) 48 48 45 22 21 35 40
Rds On (Max) @ 10V (mOhm) 105 105 100 130 158 140 110
Qg (Max) @ 10V (nC) 137 137 117 62.5 50 72 190
Power Dissipation (Max) (W) 625 625 417 190 150 403 310
Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247 [B] ISOPLUS247™
Operating Temp Range (°C) -55 to 150 -55 to 150 -65 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Product Status Obsolete Active Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Direct Replacement (Parametric Equivalent):

FDH50N50-F133 is the primary equivalent for the obsolete FDH50N50. This part maintains identical electrical specifications (500V Vdss, 48A Id, 105mOhm Rds On, 137nC Qg, 625W power dissipation) and TO-247-3 packaging. The part is manufactured by onsemi and carries Active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The only material difference is packaging format (Tube vs. unspecified on the main part). This substitution requires no circuit redesign.

Current-Rated Alternatives:

STW45NM50 (STMicroelectronics) provides the closest alternative among active parts with 45A continuous drain current, 100mOhm Rds On, and 417W power dissipation. This part is suitable for applications where the full 48A rating is not required. Operating temperature range extends to -65°C, providing enhanced low-temperature performance. ROHS3 compliance and Active status ensure procurement continuity.

Reduced-Current Substitutes:

STW32NM50N and STW28NM50N (STMicroelectronics) are suitable only for applications with lower current requirements (22A and 21A respectively). These parts exhibit higher Rds On values (130mOhm and 158mOhm) and reduced power dissipation (190W and 150W), limiting their use to lower-power circuit implementations.

Cross-Manufacturer Alternatives:

APT5014BLLG (Microchip Technology) operates at 35A with 140mOhm Rds On and 403W power dissipation. IXFR48N50Q (IXYS) provides 40A current rating with 110mOhm Rds On but exhibits elevated gate charge (190nC), requiring higher gate drive capability. Both parts maintain 500V Vdss and TO-247-3 package compatibility with ROHS3 compliance and Active status.

All recommended substitutes carry REACH Unaffected status and EAR99 ECCN classification, matching the regulatory profile of the original part.

Frequently Asked Questions (FAQ)

Q: Can FDH50N50-F133 be used as a direct drop-in replacement for FDH50N50?

A: Yes. FDH50N50-F133 is a parametric equivalent with identical electrical specifications (500V Vdss, 48A Id, 105mOhm Rds On, 137nC Qg, 625W power dissipation) and TO-247-3 through-hole packaging. No circuit modifications are required. The part is manufactured by onsemi and carries Active product status with ROHS3 compliance.

Q: What is the primary reason for substituting the FDH50N50?

A: The FDH50N50 is classified as Obsolete. FDH50N50-F133 is the recommended equivalent for ongoing procurement and design support, offering identical performance with Active product status and improved regulatory compliance (ROHS3).

Q: Can STW45NM50 replace FDH50N50 in all applications?

A: STW45NM50 is suitable for applications where continuous drain current does not exceed 45A. The part delivers 100mOhm Rds On (lower than FDH50N50's 105mOhm) and 417W power dissipation (lower than 625W). Applications requiring the full 48A rating or maximum thermal headroom should use FDH50N50-F133 or STW45NM50 with thermal analysis to confirm adequacy.

Q: Are all substitute parts available in TO-247-3 packaging?

A: All recommended substitutes are housed in TO-247-3 or mechanically compatible through-hole packages (TO-247 [B] for APT5014BLLG, ISOPLUS247™ for IXFR48N50Q). Pin configurations and mounting footprints are compatible with standard TO-247-3 PCB layouts.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. FDH50N50 and FDH50N50-F133 require 137nC at 10V. STW45NM50 requires 117nC (lower), while IXFR48N50Q requires 190nC (higher). Higher gate charge demands greater gate drive circuit capability. Existing gate drive circuits designed for 137nC operation will function with lower Qg parts but may require redesign for parts exceeding this specification.

Q: Do all substitute parts meet RoHS and REACH compliance?

A: FDH50N50-F133, STW45NM50, STW32NM50N, STW28NM50N, APT5014BLLG, and IXFR48N50Q all carry ROHS3 Compliant status and REACH Unaffected classification. The original FDH50N50 does not specify RoHS status. Substitution with any recommended part improves regulatory compliance for new designs.

Q: What thermal considerations apply when selecting among substitute parts?

A: Maximum power dissipation varies significantly: FDH50N50 and FDH50N50-F133 support 625W, STW45NM50 supports 417W, APT5014BLLG supports 403W, IXFR48N50Q supports 310W, and STW32NM50N/STW28NM50N support 190W/150W respectively. Applications with high thermal loads require parts with higher power dissipation ratings. Thermal management design must account for the selected part's maximum rating.

Q: Can lower-current parts (STW28NM50N, STW32NM50N) be used in place of FDH50N50?

A: These parts are suitable only for applications where continuous drain current does not exceed 21A (STW28NM50N) or 22A (STW32NM50N). They are not suitable for circuits designed to operate at or near the FDH50N50's 48A rating. Use these parts only after confirming actual circuit current requirements through design analysis.

Q: What is the operating temperature range for all substitute parts?

A: FDH50N50, FDH50N50-F133, STW32NM50N, STW28NM50N, APT5014BLLG, and IXFR48N50Q operate from -55°C to 150°C (TJ). STW45NM50 extends the lower limit to -65°C, providing enhanced cold-temperature performance. All parts meet or exceed the original part's temperature specification.

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