FDH210N08 Equivalent & Substitute Parts

Part Overview

The FDH210N08 is an N-Channel MOSFET manufactured by onsemi, rated for 75V drain-to-source voltage with 210A continuous drain current at 25°C and 462W maximum power dissipation. The device is housed in a Through Hole TO-247-3 package and operates across a temperature range of -55°C to 175°C. This component is Active in product status and fully compliant with ROHS3 and REACH regulations.

Equivalent and substitute parts are identified based on matching electrical specifications including drain-to-source voltage rating, continuous drain current capability, power dissipation, gate drive voltage, operating temperature range, and compatible through-hole package configurations. Substitutes maintain functional equivalence within the specified parameter tolerances.

Substiute Parts

FDH210N08

onsemiIn Stock: 2050FDH210N08 Datasheet

Current PartRFQ

IRFP2907PBF

Infineon TechnologiesIn Stock: 3291IRFP2907PBF Datasheet

SimilarRFQ

IXFH230N075T2

IXYSIn Stock: 1088IXFH230N075T2 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDH210N08 are qualified based on the following criteria:

Electrical Parameter Matching:

• Drain-to-source voltage (Vdss) of 75V
• Continuous drain current (Id) at or above 210A at 25°C
• Maximum power dissipation at or above 462W
• Gate drive voltage of 10V
• Maximum gate voltage of ±20V
• Operating temperature range of -55°C to 175°C

Mechanical and Package Compatibility:

• Through-hole mounting configuration
• TO-247 package family (TO-247-3, TO-247AC, TO-247AD variants)
• N-Channel MOSFET technology

Compliance and Status:

• Active product status
• ROHS3 compliance
• REACH unaffected status

The identified substitutes meet all specified electrical parameters and maintain functional equivalence within the allowed tolerances. Package variants within the TO-247 family are considered compatible due to identical pin configurations and thermal characteristics.

Parameter Comparison

Engineering Selection Recommendations

All three devices—FDH210N08, IRFP2907PBF, and IXFH230N075T2—are Active products with full ROHS3 compliance and REACH unaffected status, making them suitable for applications requiring regulatory compliance.

FDH210N08 (onsemi): Primary specification baseline. Rated for 210A continuous drain current and 462W power dissipation. Appropriate for standard 75V N-Channel MOSFET applications.

IRFP2907PBF (Infineon Technologies): Meets all electrical specifications with 209A continuous drain current and 470W power dissipation. Packaged in TO-247AC variant. Provides equivalent performance with marginal power dissipation increase.

IXFH230N075T2 (IXYS): Exceeds baseline specifications with 230A continuous drain current and 480W power dissipation. Packaged in TO-247AD variant. Offers enhanced current handling capability within the same voltage and temperature ratings.

All substitutes maintain identical gate voltage specifications (±20V maximum), drive voltage (10V), and operating temperature range (-55°C to 175°C). Package variants (TO-247-3, TO-247AC, TO-247AD) are mechanically and electrically compatible within the TO-247 family.

Frequently Asked Questions (FAQ)

Q: Can IRFP2907PBF directly replace FDH210N08 in existing designs?

A: Yes. The IRFP2907PBF meets all electrical specifications of the FDH210N08, including 75V Vdss, 209A continuous drain current, and 470W power dissipation. The TO-247AC package is mechanically compatible with TO-247-3 footprints. Pin configuration and thermal characteristics are equivalent.

Q: What is the difference between TO-247-3, TO-247AC, and TO-247AD packages?

A: All three are TO-247 family through-hole packages with identical pin configurations and thermal performance. The designations (TO-247-3, TO-247AC, TO-247AD) reflect manufacturer-specific package variants. They are mechanically and electrically interchangeable for PCB mounting and circuit operation.

Q: Is IXFH230N075T2 suitable for applications designed for FDH210N08?

A: Yes. The IXFH230N075T2 exceeds the FDH210N08 specifications with 230A continuous drain current and 480W power dissipation, while maintaining identical voltage ratings (75V Vdss), gate voltage (±20V), and operating temperature range (-55°C to 175°C). The higher current rating provides additional design margin.

Q: Are all three devices RoHS3 compliant?

A: Yes. FDH210N08, IRFP2907PBF, and IXFH230N075T2 are all ROHS3 compliant and REACH unaffected, meeting regulatory requirements for electronic component use.

Q: What determines substitutability between these N-Channel MOSFETs?

A: Substitutability is determined by matching drain-to-source voltage (75V), continuous drain current capability (210A minimum), power dissipation (462W minimum), gate voltage specifications (±20V), operating temperature range (-55°C to 175°C), and through-hole TO-247 package compatibility. All three devices meet these criteria.

Q: Can these devices be used interchangeably in high-current switching applications?

A: Yes, within their rated specifications. All three devices are rated for continuous drain currents at or above 210A and power dissipation at or above 462W. Circuit design must account for individual device on-resistance (Rds On) characteristics and thermal management requirements specific to each manufacturer's design.