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FDG6332C-F085 Equivalent & Substitute Parts
Part Overview
The FDG6332C-F085 is an N and P-Channel MOSFET array manufactured by onsemi, designed for low-voltage switching applications with a maximum drain-source voltage of 20V and continuous drain current ratings of 700mA and 600mA. The device is packaged in a 6-TSSOP (SC-88, SOT-363) surface mount configuration and qualified to AEC-Q101 automotive standards.
This part is classified as obsolete. Identifying equivalent and substitute components is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing the FDG6332C-F085.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 20 | V |
| Continuous Drain Current (Id) @ 25°C | 700mA, 600mA | A |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 700mA, 4.5V | mOhm |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V | nC |
| Input Capacitance (Ciss) (Max) @ Vds | 113pF @ 10V | pF |
| Power Dissipation (Max) | 300 | mW |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Configuration | N and P-Channel | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Automotive Grade | AEC-Q101 | |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitution of the FDG6332C-F085 is determined by the following critical electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain to Source Voltage (Vdss): Must equal or exceed 20V
- Configuration: N and P-Channel dual MOSFET array
- Package Type: 6-TSSOP (SC-88, SOT-363) surface mount
- Operating Temperature Range: -55°C to 150°C (TJ)
- Automotive Grade Qualification: AEC-Q100 or AEC-Q101
Secondary Compatibility Parameters:
- Continuous Drain Current (Id): Substitute must support minimum 600mA (P-Channel) and 700mA (N-Channel)
- Rds On (Max): Substitute must not exceed 300mOhm at rated conditions
- Vgs(th) (Max): Logic level gate operation (≤1.5V threshold)
- Gate Charge (Qg): Lower values indicate faster switching performance
- Input Capacitance (Ciss): Lower values reduce gate drive requirements
The PMGD290UCEAX qualifies as a direct substitute based on matching configuration, package type, voltage rating, and automotive qualification. The PMV65UNEAR is classified as a functional alternative for N-Channel applications only, with higher current capability but different package configuration.
Parameter Comparison
| Parameter | FDG6332C-F085 (Main) | PMGD290UCEAX (Substitute) | PMV65UNEAR (Alternative) |
|---|---|---|---|
| Manufacturer | onsemi | Nexperia USA Inc. | Nexperia USA Inc. |
| Configuration | N and P-Channel | N and P-Channel | N-Channel Only |
| Drain to Source Voltage (Vdss) | 20V | 20V | 20V |
| Continuous Drain Current (Id) @ 25°C | 700mA, 600mA | 725mA, 500mA | 2.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 700mA, 4.5V | 380mOhm @ 500mA, 4.5V | 73mOhm @ 2.8A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | 1.3V @ 250µA | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V | 0.68nC @ 4.5V | 6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 113pF @ 10V | 83pF @ 10V | 291pF @ 10V |
| Power Dissipation (Max) | 300mW | 280mW | 940mW (Ta) |
| Operating Temperature Range | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | TO-236-3, SC-59, SOT-23-3 |
| Automotive Grade | AEC-Q101 | AEC-Q100 | AEC-Q100 |
| Product Status | Obsolete | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
PMGD290UCEAX - Primary Substitute:
The PMGD290UCEAX is the recommended direct substitute for the FDG6332C-F085. Both devices maintain identical voltage ratings (20V Vdss), matching N and P-Channel configuration, and compatible 6-TSSOP package footprint. The PMGD290UCEAX is currently in active production status with AEC-Q100 automotive qualification, ensuring long-term supply availability and compliance with automotive standards. The substitute exhibits lower gate charge (0.68nC versus 1.5nC) and reduced input capacitance (83pF versus 113pF), resulting in improved switching performance characteristics. The P-Channel drain current specification (500mA) is slightly lower than the original part (600mA), requiring circuit-level verification for applications operating at maximum P-Channel current limits.
PMV65UNEAR - Functional Alternative:
The PMV65UNEAR is suitable for applications requiring N-Channel MOSFET functionality only. This device provides significantly higher continuous drain current (2.8A) and lower on-resistance (73mOhm), making it appropriate for higher-power switching applications. However, the PMV65UNEAR is packaged in TO-236AB (SOT-23-3) configuration, which differs from the original 6-TSSOP package and requires PCB layout redesign. The absence of integrated P-Channel functionality limits this option to designs where only N-Channel switching is required. This part is qualified to AEC-Q100 automotive standards and maintains active production status.
Both substitute options comply with ROHS3 and REACH requirements, matching the environmental compliance profile of the original FDG6332C-F085.
Frequently Asked Questions (FAQ)
Q: Can the PMGD290UCEAX be used as a direct pin-for-pin replacement for the FDG6332C-F085?
A: Yes. Both devices utilize the 6-TSSOP package with identical pinout configuration. The PMGD290UCEAX maintains the same N and P-Channel dual MOSFET array architecture and can be substituted without PCB layout modifications.
Q: What is the significance of the lower gate charge specification in the PMGD290UCEAX?
A: The PMGD290UCEAX exhibits gate charge of 0.68nC compared to 1.5nC in the FDG6332C-F085. Lower gate charge reduces the energy required to switch the device and decreases gate drive circuit complexity, resulting in faster switching transitions and reduced power consumption in the gate drive circuit.
Q: Is the PMV65UNEAR suitable for applications requiring both N-Channel and P-Channel switching?
A: No. The PMV65UNEAR is a single N-Channel device and does not include integrated P-Channel functionality. It is applicable only to designs requiring N-Channel switching capability. Applications requiring complementary N and P-Channel switching must utilize the PMGD290UCEAX or equivalent dual-channel devices.
Q: What is the impact of the PMGD290UCEAX P-Channel current rating of 500mA versus the original 600mA specification?
A: The 500mA P-Channel rating in the PMGD290UCEAX is lower than the original 600mA specification. Circuit designs operating the P-Channel at continuous currents exceeding 500mA require thermal and electrical analysis to confirm compatibility. Applications operating below 500mA continuous P-Channel current experience no functional limitation.
Q: Are both substitute parts qualified to automotive standards?
A: Yes. The PMGD290UCEAX holds AEC-Q100 qualification, and the PMV65UNEAR holds AEC-Q100 qualification. Both meet automotive-grade reliability and testing requirements. The original FDG6332C-F085 carries AEC-Q101 qualification, which represents a higher qualification level. For applications requiring AEC-Q101 specifically, design review is necessary to determine if AEC-Q100 qualification is acceptable.
Q: What packaging considerations apply when selecting the PMV65UNEAR?
A: The PMV65UNEAR utilizes TO-236AB (SOT-23-3) packaging, which differs from the 6-TSSOP package of the FDG6332C-F085. PCB layout redesign is required, including footprint modification, trace routing adjustments, and thermal management evaluation. This option is suitable only for new designs or redesign projects where package change is feasible.
Q: Do the substitute parts maintain RoHS3 and REACH compliance?
A: Yes. Both the PMGD290UCEAX and PMV65UNEAR are ROHS3 compliant and REACH unaffected, matching the environmental compliance status of the original FDG6332C-F085.
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