FDG6322C_D87Z Equivalent & Substitute Parts

Part Overview

The FDG6322C_D87Z is an N and P-Channel MOSFET array manufactured by onsemi, designed for surface mount applications in the SC-88 (SC-70-6) package. This dual-channel logic level gate device operates at 25V drain-to-source voltage with continuous drain current ratings of 220mA and 410mA, delivering 300mW maximum power dissipation across an operating temperature range of -55°C to 150°C.

The FDG6322C_D87Z carries an obsolete product status. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production requirements for applications utilizing this MOSFET array configuration.

Substiute Parts

FDG6322C_D87Z
onsemiIn Stock: 1087FDG6322C_D87Z Datasheet
FDG6322C_D87Z
Current Part
FDG6322C
onsemiIn Stock: 53366FDG6322C Datasheet
FDG6322C
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 220, 410 mA
Rds On (Max) @ Id, Vgs 4 Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id 1.5 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.4 nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 9.5 pF @ 10V
Power - Max 300 mW
Operating Temperature Range -55 to 150 °C (TJ)
Configuration N and P-Channel
Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate

Substitute Part Grouping Explanation

Substitution of the FDG6322C_D87Z is determined by strict equivalence across the following critical parameters:

Electrical Specifications:

  • Drain to Source Voltage (Vdss): 25V
  • Continuous Drain Current (Id): 220mA and 410mA
  • On-State Resistance (Rds On): 4 Ohm @ 220mA, 4.5V
  • Gate Threshold Voltage (Vgs(th)): 1.5V @ 250µA
  • Gate Charge (Qg): 0.4nC @ 4.5V
  • Input Capacitance (Ciss): 9.5pF @ 10V
  • Maximum Power Dissipation: 300mW

Physical and Functional Requirements:

  • Configuration: N and P-Channel dual MOSFET array
  • Package: 6-TSSOP, SC-88, SOT-363
  • Mounting: Surface Mount
  • Technology: MOSFET (Metal Oxide)
  • Gate Feature: Logic Level Gate
  • Operating Temperature: -55°C to 150°C

Substitute parts must match all electrical parameters and physical package specifications to ensure direct functional replacement without circuit redesign or board layout modification.

Parameter Comparison

Parameter FDG6322C_D87Z (Main Part) FDG6322C (Substitute) Match Status
Manufacturer onsemi onsemi Identical
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Identical
Configuration N and P-Channel N and P-Channel Identical
Drain to Source Voltage (Vdss) 25V 25V Identical
Current - Continuous Drain (Id) @ 25°C 220mA, 410mA 220mA, 410mA Identical
Rds On (Max) @ Id, Vgs 4Ohm @ 220mA, 4.5V 4Ohm @ 220mA, 4.5V Identical
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA Identical
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V 0.4nC @ 4.5V Identical
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V 9.5pF @ 10V Identical
Power - Max 300mW 300mW Identical
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) Identical
Mounting Type Surface Mount Surface Mount Identical
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 Identical
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Identical
FET Feature Logic Level Gate Logic Level Gate Identical
Product Status Obsolete Active Substitute is Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Identical
REACH Status REACH Unaffected REACH Unaffected Identical
ECCN EAR99 EAR99 Identical
HTSUS 8541.21.0095 8541.21.0095 Identical

Engineering Selection Recommendations

The FDG6322C serves as a direct functional equivalent to the FDG6322C_D87Z. Both parts are manufactured by onsemi and share identical electrical specifications, package configuration, and operating characteristics.

Primary Advantage of FDG6322C: The FDG6322C maintains active product status with significantly higher inventory availability (53,300 pieces in stock versus 1,035 pieces for the main part). This ensures reliable long-term supply chain access and supports sustained production requirements.

Compliance and Regulatory Alignment: Both parts carry identical regulatory certifications: REACH Unaffected status, EAR99 ECCN classification, and HTSUS code 8541.21.0095. The FDG6322C includes RoHS3 Compliance certification, providing additional environmental compliance assurance for applications subject to RoHS requirements.

Moisture Sensitivity: Both parts carry MSL 1 (Unlimited) rating, indicating no moisture sensitivity constraints during storage, handling, or assembly processes.

Direct Substitution Capability: The FDG6322C is suitable for direct substitution in all applications currently utilizing the FDG6322C_D87Z. No circuit modifications, board layout changes, or performance adjustments are required. Pin configuration, electrical performance, and thermal characteristics remain identical across both parts.

Frequently Asked Questions (FAQ)

Q: Can the FDG6322C directly replace the FDG6322C_D87Z without circuit modifications?

A: Yes. The FDG6322C is electrically and mechanically identical to the FDG6322C_D87Z. All electrical parameters, package dimensions, pin configuration, and operating characteristics match exactly. Direct substitution is possible without circuit redesign or board layout modification.

Q: What is the difference between FDG6322C_D87Z and FDG6322C?

A: The primary differences are product status and packaging format. The FDG6322C_D87Z is obsolete, while the FDG6322C maintains active status. The FDG6322C is available in Cut Tape (CT) and Digi-Reel packaging formats. All electrical and functional specifications are identical.

Q: Are the package dimensions identical between both parts?

A: Yes. Both parts use the 6-TSSOP, SC-88, SOT-363 package configuration. Physical dimensions, pin spacing, and mounting footprint are identical, ensuring compatibility with existing PCB designs.

Q: Does the FDG6322C meet RoHS compliance requirements?

A: The FDG6322C carries RoHS3 Compliance certification. The FDG6322C_D87Z does not list RoHS status in the provided specifications. For applications requiring RoHS compliance, the FDG6322C is the appropriate selection.

Q: What is the moisture sensitivity level for these parts?

A: Both the FDG6322C_D87Z and FDG6322C carry MSL 1 (Unlimited) rating. This indicates no moisture sensitivity constraints. Parts may be stored and handled without moisture control measures or baking requirements prior to assembly.

Q: Are there any thermal or operating temperature differences?

A: No. Both parts operate across the identical temperature range of -55°C to 150°C (junction temperature). Thermal performance and power dissipation characteristics are identical at 300mW maximum.

Q: What drain current ratings apply to this MOSFET array?

A: The FDG6322C and FDG6322C_D87Z both support continuous drain current ratings of 220mA and 410mA at 25°C. These ratings apply to the N-channel and P-channel elements respectively within the dual MOSFET array configuration.

Q: Is the gate threshold voltage the same for both parts?

A: Yes. Both parts specify a maximum gate threshold voltage (Vgs(th)) of 1.5V at 250µA drain current. This logic level gate characteristic is identical across both devices.

Q: What is the on-state resistance specification?

A: Both parts specify a maximum on-state resistance (Rds On) of 4 Ohm, measured at 220mA drain current and 4.5V gate-source voltage. This specification is identical for the FDG6322C and FDG6322C_D87Z.

Q: Are gate charge and input capacitance specifications identical?

A: Yes. Both parts specify gate charge (Qg) of 0.4nC at 4.5V gate-source voltage and input capacitance (Ciss) of 9.5pF at 10V drain-source voltage. These switching characteristics are identical.

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