FDG6320C Equivalent & Substitute Parts

Part Overview

The FDG6320C is an N and P-Channel MOSFET array manufactured by onsemi, housed in a 6-TSSOP (SC-88, SOT-363) surface mount package. This device integrates complementary metal-oxide semiconductor technology with logic level gate operation, rated for 25V drain-to-source voltage and 300mW maximum power dissipation. The FDG6320C is classified as obsolete, necessitating identification of functionally equivalent active alternatives for new designs and ongoing production requirements. Substitute parts must maintain compatibility with the SC-88 package footprint and preserve critical electrical characteristics within acceptable operating parameters.

Key Parameters

Parameter	FDG6320C	Unit
Drain to Source Voltage (Vdss)	25V	V
Current - Continuous Drain (Id) @ 25°C	220mA, 140mA	mA
Rds On (Max) @ Id, Vgs	4Ohm @ 220mA, 4.5V	Ohm
Vgs(th) (Max) @ Id	1.5V @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	0.4nC @ 4.5V	nC
Input Capacitance (Ciss) (Max) @ Vds	9.5pF @ 10V	pF
Power - Max	300mW	mW
Operating Temperature	-55°C ~ 150°C (TJ)	°C
Package / Case	6-TSSOP, SC-88, SOT-363	—
Configuration	N and P-Channel	—
FET Feature	Logic Level Gate	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution eligibility for the FDG6320C is determined by the following critical parameters:

Package Compatibility: All substitute parts must use the 6-TSSOP, SC-88, or SOT-363 surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts.

Configuration: Substitute parts must maintain N and P-Channel complementary MOSFET array architecture with logic level gate operation.

Voltage Rating: The drain-to-source voltage (Vdss) of substitute parts must equal or exceed 25V to support the original design voltage specification. Parts with lower Vdss ratings are not suitable.

Current Capability: Substitute parts must support continuous drain current (Id) ratings that meet or exceed the original 220mA and 140mA specifications for the N-channel and P-channel devices respectively.

On-Resistance (Rds On): The maximum on-resistance must not exceed the original specification of 4Ohm at the rated current and gate voltage to maintain switching performance and thermal characteristics.

Power Dissipation: Maximum power rating must be sufficient to support the 300mW specification.

Operating Temperature Range: Substitute parts must support the full -55°C to 150°C operating temperature range.

Compliance: All substitute parts must maintain RoHS3 compliance and REACH unaffected status.

Parameter Comparison

Parameter	FDG6320C	NTJD4105CT1G	NTJD4158CT1G	PMGD290UCEAX	SI1553CDL-T1-GE3
Manufacturer	onsemi	onsemi	onsemi	Nexperia USA Inc.	Vishay Siliconix
Drain to Source Voltage (Vdss)	25V	20V, 8V	30V, 20V	20V	20V
Current - Continuous Drain (Id) @ 25°C	220mA, 140mA	630mA, 775mA	250mA, 880mA	725mA, 500mA	700mA, 500mA
Rds On (Max) @ Id, Vgs	4Ohm @ 220mA, 4.5V	375mOhm @ 630mA, 4.5V	1.5Ohm @ 10mA, 4.5V	380mOhm @ 500mA, 4.5V	390mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA	1.5V @ 250µA	1.5V @ 100µA	1.3V @ 250µA	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.4nC @ 4.5V	3nC @ 4.5V	1.5nC @ 5V	0.68nC @ 4.5V	1.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	9.5pF @ 10V	46pF @ 20V	33pF @ 5V	83pF @ 10V	38pF @ 10V
Power - Max	300mW	270mW	270mW	280mW	340mW
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Package / Case	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363
Configuration	N and P-Channel	N and P-Channel	N and P-Channel	N and P-Channel	N and P-Channel
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

NTJD4158CT1G (onsemi): This part offers the highest drain-to-source voltage rating at 30V for the N-channel device, exceeding the FDG6320C specification of 25V. The N-channel continuous drain current of 250mA meets the original 220mA requirement. Product status is active with full RoHS3 and REACH compliance. The SC-88/SC70-6/SOT-363 package ensures mechanical compatibility. This part is suitable for applications requiring voltage margin above the original design specification.

NTJD4105CT1G (onsemi): This part provides significantly higher current capability with 630mA N-channel and 775mA P-channel ratings, substantially exceeding the original 220mA and 140mA specifications. The drain-to-source voltage is rated at 20V for the N-channel and 8V for the P-channel, which is below the original 25V specification. Product status is active with full compliance certifications. This part is suitable for applications where the 20V N-channel rating is acceptable and higher current capacity is beneficial.

PMGD290UCEAX (Nexperia USA Inc.): This part maintains a 20V drain-to-source voltage rating and provides 725mA N-channel and 500mA P-channel current capability. The 6-TSSOP package is compatible with the original SC-88 footprint. Product status is active with automotive grade qualification (AEC-Q100) and full RoHS3 compliance. This part is suitable for automotive applications and designs where the 20V rating is acceptable.

SI1553CDL-T1-GE3 (Vishay Siliconix): This TrenchFET® series part maintains a 20V drain-to-source voltage rating with 700mA N-channel and 500mA P-channel current capability. The SC-70-6 package is compatible with the original SC-88 footprint. Product status is active with full RoHS3 and REACH compliance. This part is suitable for applications where the 20V rating is acceptable and the TrenchFET® technology is preferred.

Frequently Asked Questions (FAQ)

Q: Can the NTJD4105CT1G be used as a direct replacement for the FDG6320C?

A: The NTJD4105CT1G is mechanically compatible with the SC-88 package and maintains the same N and P-Channel configuration with logic level gate operation. However, the N-channel drain-to-source voltage rating is 20V, which is below the original FDG6320C specification of 25V. This part is suitable only for applications where the design voltage does not exceed 20V.

Q: What is the primary limitation of substitute parts with 20V ratings?

A: Substitute parts rated at 20V drain-to-source voltage cannot be used in circuits designed for the full 25V specification of the FDG6320C. The lower voltage rating reduces the maximum voltage that can be applied across the drain and source terminals. Circuit redesign or voltage derating is required if a 20V-rated part is selected.

Q: Are all substitute parts compatible with the original PCB layout?

A: All four substitute parts use the 6-TSSOP, SC-88, or SOT-363 package designation, which ensures mechanical and electrical compatibility with PCB layouts designed for the FDG6320C. Pin assignments and package dimensions are equivalent across these designations.

Q: Does the PMGD290UCEAX offer any advantages over other substitutes?

A: The PMGD290UCEAX is qualified to AEC-Q100 automotive standards, making it suitable for automotive applications. This qualification is not present in the other substitute options. The 20V rating and current capabilities are comparable to other 20V-rated alternatives.

Q: How do gate charge differences affect circuit performance?

A: The FDG6320C has a gate charge of 0.4nC at 4.5V. Substitute parts have higher gate charge values: NTJD4105CT1G (3nC), NTJD4158CT1G (1.5nC), PMGD290UCEAX (0.68nC), and SI1553CDL-T1-GE3 (1.8nC). Higher gate charge increases the energy required to switch the device and may affect switching speed in high-frequency applications. Circuit analysis is necessary to determine if the increased gate charge is acceptable for the specific application.

Q: What is the significance of the NTJD4158CT1G having a 30V N-channel rating?

A: The NTJD4158CT1G N-channel device is rated for 30V, which exceeds the original FDG6320C specification of 25V. This provides additional voltage margin and allows the part to be used in applications requiring voltages up to 30V. The P-channel device is rated at 20V.

Q: Are all substitute parts available in the same packaging options?

A: All substitute parts are available in surface mount packages compatible with the SC-88 designation. NTJD4105CT1G and NTJD4158CT1G are available in Cut Tape and Tape & Reel packaging. PMGD290UCEAX and SI1553CDL-T1-GE3 are available in Cut Tape and Digi-Reel packaging. Specific packaging availability should be confirmed with the supplier.

Q: What compliance certifications are maintained across all substitute parts?

A: All substitute parts maintain RoHS3 compliance and REACH unaffected status, matching the environmental compliance of the original FDG6320C. The PMGD290UCEAX additionally carries AEC-Q100 automotive qualification.

Q: How do input capacitance differences impact circuit design?

A: The FDG6320C has an input capacitance of 9.5pF at 10V. Substitute parts have higher input capacitance values ranging from 33pF to 83pF. Higher input capacitance increases the capacitive load on the gate driver circuit and may require adjustments to gate drive circuitry in high-frequency switching applications.

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