FDG6318PZ Equivalent & Substitute Parts

Part Overview

The FDG6318PZ is a dual P-channel MOSFET array manufactured by onsemi, designed for surface mount applications in the SC-88 (SOT-363) package. This device features logic level gate operation with a maximum drain-source voltage rating of 20V and continuous drain current capability of 500mA at 25°C. The part is classified as obsolete, necessitating identification of active equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, gate threshold characteristics, and thermal operating ranges while accommodating the same or compatible package footprints.

Substiute Parts

FDG6318PZ

onsemiIn Stock: 20380FDG6318PZ Datasheet

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NTJD4152PT1G

onsemiIn Stock: 75814NTJD4152PT1G Datasheet

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DMP2004DWK-7

Diodes IncorporatedIn Stock: 35278DMP2004DWK-7 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the FDG6318PZ is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Dual P-channel MOSFET configuration
• Drain-source voltage rating of 20V or greater
• Surface mount package compatibility (SC-88, SOT-363, or 6-TSSOP)
• Logic level gate operation
• Operating temperature range encompassing -55°C to 150°C

Performance Matching Criteria:

• Continuous drain current capability at or above 500mA
• On-resistance (Rds On) characteristics suitable for the application current level
• Gate threshold voltage within acceptable logic level specifications
• Power dissipation rating adequate for thermal requirements

The identified substitute parts NTJD4152PT1G and DMP2004DWK-7 satisfy the mandatory compatibility criteria and maintain electrical performance within the operational envelope of the FDG6318PZ. Both substitutes are active products with current manufacturing status and full RoHS3 compliance.

Parameter Comparison

Engineering Selection Recommendations

NTJD4152PT1G (onsemi) is the primary substitute for FDG6318PZ applications. This part maintains onsemi manufacturer continuity and active product status. The NTJD4152PT1G provides enhanced current handling capability at 880mA continuous drain current, superior on-resistance characteristics at 260mOhm, and improved gate threshold voltage at 1.2V. The device operates across the identical temperature range (-55°C to 150°C) and maintains full RoHS3 and REACH compliance. Package compatibility is confirmed across SC-88 and SOT-363 specifications.

DMP2004DWK-7 (Diodes Incorporated) serves as an alternative substitute when onsemi sourcing is constrained. This part maintains the 20V voltage rating and dual P-channel configuration with active product status. The DMP2004DWK-7 operates across an extended lower temperature range (-65°C to 150°C) and provides full regulatory compliance. However, the continuous drain current rating of 430mA falls below the FDG6318PZ specification of 500mA, and on-resistance is higher at 900mOhm. This part is suitable for applications where current requirements do not exceed 430mA.

Both substitute parts carry MSL Level 1 (Unlimited) moisture sensitivity ratings and are RoHS3 compliant, ensuring compatibility with modern manufacturing and environmental standards.

Frequently Asked Questions (FAQ)

Q: Can NTJD4152PT1G directly replace FDG6318PZ in all applications?

A: NTJD4152PT1G is electrically compatible with FDG6318PZ across all specified parameters. The higher continuous drain current (880mA vs. 500mA) and lower on-resistance (260mOhm vs. 780mOhm) provide improved performance margins. Package footprints are identical. Direct substitution is supported without circuit modification.

Q: What are the limitations of DMP2004DWK-7 as a substitute?

A: DMP2004DWK-7 has a continuous drain current rating of 430mA, which is below the FDG6318PZ specification of 500mA. Applications requiring sustained current above 430mA must use NTJD4152PT1G. The on-resistance of 900mOhm is also higher than FDG6318PZ at 780mOhm, resulting in increased power dissipation at equivalent current levels.

Q: Are package dimensions identical across all three parts?

A: All three parts use the 6-TSSOP/SC-88/SOT-363 package family with identical pin configurations and footprints. PCB layout modifications are not required when substituting between these parts.

Q: What is the significance of the gate threshold voltage differences?

A: Gate threshold voltage (Vgs(th)) determines the gate-source voltage required to initiate channel conduction. NTJD4152PT1G (1.2V) and DMP2004DWK-7 (1.0V) have lower thresholds than FDG6318PZ (1.5V), enabling faster switching response at lower gate drive voltages. This improves performance in logic-level gate drive applications.

Q: Do all substitute parts meet current environmental and compliance standards?

A: Yes. NTJD4152PT1G and DMP2004DWK-7 are both RoHS3 compliant, REACH unaffected, and carry MSL Level 1 (Unlimited) ratings. Both parts are classified under ECCN EAR99 and HTSUS 8541.21.0095, matching the regulatory classification of FDG6318PZ.

Q: Which substitute should be selected for new design implementations?

A: NTJD4152PT1G is the recommended selection for new designs due to active product status, enhanced electrical performance, and onsemi manufacturer continuity. DMP2004DWK-7 is suitable as a secondary source option for applications where current requirements do not exceed 430mA and dual-source qualification is required.