FDG6317NZ Equivalent & Substitute Parts

Part Overview

The FDG6317NZ is a dual N-channel MOSFET array manufactured by onsemi in the PowerTrench® series. This surface mount device operates at 20V drain-to-source voltage with 700mA continuous drain current and 300mW maximum power dissipation. The component features logic level gate operation and is packaged in SC-88 (SC-70-6) configuration.

The FDG6317NZ carries Last Time Buy product status, indicating that onsemi has discontinued this part. Equivalent and substitute parts are necessary for ongoing production requirements, design refreshes, and long-term supply chain continuity. Substitute devices must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance, and gate threshold characteristics while accommodating package variations within the same family.

Key Parameters

Parameter	FDG6317NZ Value	Unit	Substitution Criticality
Configuration	2 N-Channel (Dual)	—	Critical
Drain to Source Voltage (Vdss)	20V	V	Critical
Current - Continuous Drain (Id) @ 25°C	700mA	mA	Critical
Rds On (Max) @ Id, Vgs	400mOhm @ 700mA, 4.5V	mOhm	Critical
Vgs(th) (Max) @ Id	1.5V @ 250µA	V	Important
Gate Charge (Qg) (Max) @ Vgs	1.1nC @ 4.5V	nC	Important
Input Capacitance (Ciss) (Max) @ Vds	66.5pF @ 10V	pF	Important
Power - Max	300mW	mW	Critical
Operating Temperature	-55°C ~ 150°C (TJ)	°C	Important
Mounting Type	Surface Mount	—	Critical
Package / Case	6-TSSOP, SC-88, SOT-363	—	Critical
FET Feature	Logic Level Gate	—	Important
Technology	MOSFET (Metal Oxide)	—	Critical
RoHS Status	ROHS3 Compliant	—	Important
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—	Important

Substitute Part Grouping Explanation

Substitution logic for the FDG6317NZ is based on the following critical parameters:

Voltage Rating (Vdss): All substitute parts must operate at 20V or higher drain-to-source voltage. Parts rated at 30V are acceptable as they provide voltage margin while maintaining compatibility with 20V circuit designs.

Current Capacity (Id): Substitute parts must support continuous drain current at or above 700mA at 25°C. Parts with lower current ratings (540mA, 500mA, 660mA) are acceptable only when on-resistance and power dissipation remain within acceptable circuit operating margins.

On-Resistance (Rds On): The maximum on-resistance specification at rated current and gate voltage (4.5V) determines power dissipation and thermal performance. Substitute parts with lower on-resistance values provide improved efficiency and reduced heat generation.

Power Dissipation (Pmax): Maximum power rating must support the thermal requirements of the application. Parts rated at 200mW to 410mW represent acceptable substitutes depending on circuit duty cycle and thermal management.

Gate Characteristics: Logic level gate operation (Vgs(th) ≤ 1.5V) is required for direct compatibility with standard digital control circuits. Gate charge and input capacitance affect switching speed and driver requirements.

Package Compatibility: All substitute parts are available in 6-TSSOP, SC-88, or SOT-363 packages, which are mechanically and electrically compatible within the same footprint family.

Compliance: All substitute parts maintain ROHS3 compliance, MSL Level 1 rating, and REACH unaffected status, matching the original part's regulatory requirements.

Parameter Comparison

Parameter	FDG6317NZ (onsemi)	SI1902DL-T1-E3 (Vishay)	PJT7808_R1_00001 (Panjit)	DMN2004DWK-7 (Diodes)	PMGD280UN,115 (Nexperia)	PMGD175XNEX (Nexperia)
Vdss	20V	20V	20V	20V	20V	30V
Id @ 25°C	700mA	660mA	500mA (Ta)	540mA	870mA	870mA (Ta)
Rds On (Max)	400mOhm @ 700mA, 4.5V	385mOhm @ 660mA, 4.5V	400mOhm @ 500mA, 4.5V	550mOhm @ 540mA, 4.5V	340mOhm @ 200mA, 4.5V	252mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ 250µA	1.5V	1.5V	900mV	1V	1V	1.25V
Qg (Max) @ 4.5V	1.1nC	1.2nC	1.4nC	—	0.89nC	1.65nC
Ciss (Max)	66.5pF @ 10V	—	67pF @ 10V	150pF @ 16V	45pF @ 20V	81pF @ 15V
Pmax	300mW	270mW	350mW (Ta)	200mW	400mW	260mW (Ta)
Operating Temperature	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-65°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C
Package	SC-88 (SC-70-6)	SC-70-6	SOT-363	SOT-363	6-TSSOP	6-TSSOP
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate, 1.2V Drive	Logic Level Gate	Logic Level Gate	—
Product Status	Last Time Buy	Active	Active	Active	Not For New Designs	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

The SI1902DL-T1-E3 (Vishay Siliconix TrenchFET®) provides the closest electrical match to the FDG6317NZ. It maintains 20V Vdss rating, delivers 660mA continuous drain current, and features 385mOhm on-resistance at 660mA with 4.5V gate voltage. Gate threshold voltage and logic level gate operation are identical. This part is in Active product status and available in SC-70-6 package, ensuring direct compatibility with existing PCB layouts.

The PJT7808_R1_00001 (Panjit International) operates at 20V with 500mA continuous drain current and 400mOhm on-resistance at 4.5V gate voltage. It features enhanced gate drive capability (1.2V drive) and lower gate threshold voltage (900mV), reducing driver circuit complexity. This part is in Active product status and available in SOT-363 package.

The PMGD175XNEX (Nexperia) provides superior electrical performance with 30V Vdss rating, 870mA continuous drain current, and 252mOhm on-resistance at 900mA with 4.5V gate voltage. The higher voltage rating provides additional design margin. This part is in Active product status and available in 6-TSSOP package.

Secondary Substitutes (Reduced Current or Alternate Status):

The DMN2004DWK-7 (Diodes Incorporated) operates at 20V with 540mA continuous drain current and 550mOhm on-resistance. This part is suitable for applications where current requirements are below 700mA. It is in Active product status and available in SOT-363 package.

The PMGD280UN,115 (Nexperia TrenchMOS™) operates at 20V with 870mA continuous drain current and 340mOhm on-resistance at 200mA with 4.5V gate voltage. This part carries Not For New Designs product status and should be used only for legacy system support or existing design maintenance.

Compliance and Regulatory Alignment:

All recommended substitute parts maintain ROHS3 compliance, MSL Level 1 rating, and REACH unaffected status. Operating temperature ranges span -55°C to 150°C (junction temperature), matching the original FDG6317NZ specification. All parts are classified under ECCN EAR99 and HTSUS 8541.21.0095, maintaining consistent export and tariff classification.

Frequently Asked Questions (FAQ)

Q: Can the SI1902DL-T1-E3 be used as a direct replacement for the FDG6317NZ?

A: The SI1902DL-T1-E3 is electrically compatible with the FDG6317NZ across all critical parameters. Both parts operate at 20V Vdss, feature logic level gate operation, and are packaged in SC-70-6 configuration. The SI1902DL-T1-E3 delivers 660mA continuous drain current compared to 700mA for the FDG6317NZ, with comparable on-resistance (385mOhm vs. 400mOhm). Gate threshold voltage and operating temperature ranges are identical. PCB layout modifications are not required.

Q: What is the difference between the 20V and 30V rated substitute parts?

A: The PMGD175XNEX is rated for 30V Vdss compared to 20V for the FDG6317NZ. The higher voltage rating provides additional design margin and allows operation in circuits with higher transient voltage spikes. The 30V part delivers superior on-resistance performance (252mOhm at 900mA) and higher current capacity (870mA), making it suitable for applications requiring enhanced thermal performance. Circuit designs rated for 20V operation are fully compatible with 30V-rated devices.

Q: Are package variations between SC-88, SOT-363, and 6-TSSOP interchangeable?

A: SC-88, SOT-363, and 6-TSSOP are mechanically and electrically equivalent packages for dual N-channel MOSFET arrays. All three packages accommodate the same die configuration and pin assignments. PCB footprints differ slightly in physical dimensions, requiring layout verification before substitution. Electrical performance and thermal characteristics are equivalent across all three package types.

Q: Why is the PMGD280UN,115 marked as "Not For New Designs"?

A: The PMGD280UN,115 carries Not For New Designs product status, indicating that Nexperia has transitioned this part to end-of-life management. While the part remains available and electrically compatible with the FDG6317NZ, it should be used only for legacy system support, field repairs, or existing design maintenance. New product designs should specify active-status alternatives such as the SI1902DL-T1-E3, PJT7808_R1_00001, or PMGD175XNEX.

Q: How do gate charge and input capacitance differences affect circuit performance?

A: Gate charge (Qg) and input capacitance (Ciss) determine the switching speed and driver circuit requirements. The FDG6317NZ specifies 1.1nC gate charge at 4.5V and 66.5pF input capacitance at 10V. Substitute parts with lower gate charge values (PMGD280UN,115 at 0.89nC) enable faster switching and reduce driver power consumption. Higher gate charge values (PMGD175XNEX at 1.65nC) require stronger driver circuits but may provide improved noise immunity. Input capacitance variations affect high-frequency performance and EMI characteristics.

Q: What is the significance of logic level gate operation?

A: Logic level gate operation indicates that the MOSFET achieves full on-state performance with standard digital logic voltage levels (typically 3.3V to 5V). All substitute parts specified maintain logic level gate characteristics, ensuring direct compatibility with microcontroller outputs, digital signal processors, and standard gate driver circuits without additional voltage translation or level-shifting components.

Q: How should on-resistance specifications be compared across different current ratings?

A: On-resistance (Rds On) is specified at particular current and gate voltage conditions. The FDG6317NZ specifies 400mOhm at 700mA with 4.5V gate voltage. Substitute parts specify on-resistance at different current levels (e.g., PMGD280UN,115 at 200mA, PMGD175XNEX at 900mA). Lower on-resistance values indicate superior switching efficiency and reduced power dissipation. When comparing parts, verify that gate voltage is held constant (typically 4.5V) and consider the application's actual operating current to determine thermal performance.

Q: Are all substitute parts available in equivalent inventory quantities?

A: Inventory availability varies by manufacturer and distributor. The FDG6317NZ shows 105,300 pieces in stock (Last Time Buy status). Active alternatives such as SI1902DL-T1-E3 (25,440 pieces), PJT7808_R1_00001 (6,961 pieces), and PMGD175XNEX (1,000,100 pieces) demonstrate varying supply levels. Long-term supply planning should prioritize parts in Active product status with established distribution channels.

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