FDG6316P Equivalent & Substitute Parts

Part Overview

The FDG6316P is a dual P-channel MOSFET array manufactured by onsemi, housed in a 6-TSSOP (SC-88/SOT-363) surface mount package. This device is rated for 12V drain-to-source voltage with 700mA continuous drain current and 300mW maximum power dissipation. The FDG6316P features logic level gate operation and is compliant with RoHS3 and REACH regulations.

The FDG6316P carries a Last Time Buy product status, indicating that onsemi has discontinued this part number. Identifying equivalent substitute parts is necessary to ensure continued design support, maintain supply chain continuity, and enable component procurement for new production runs or design revisions.

Substiute Parts

FDG6316P

onsemiIn Stock: 305465FDG6316P Datasheet

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NTJD4152PT1G

onsemiIn Stock: 75814NTJD4152PT1G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDG6316P are identified based on electrical and mechanical compatibility within the dual P-channel MOSFET category. The substitution logic is governed by the following criteria:

Package Compatibility: The substitute part must use the same 6-TSSOP (SC-88/SOT-363) surface mount package to ensure direct PCB footprint compatibility without layout modifications.

Configuration Match: The substitute must maintain a 2 P-channel (dual) configuration to preserve circuit functionality and pin assignment.

Gate Feature Alignment: Logic level gate operation is required to maintain compatibility with standard digital control signals.

Electrical Parameter Tolerance: Substitute parts must operate within the voltage and current specifications of the original design. Acceptable substitutes may have equal or higher voltage ratings (Vdss), equal or higher current ratings (Id), and on-resistance (Rds On) values that do not degrade circuit performance.

Temperature Range: The operating temperature range must encompass or match the original specification (-55°C to 150°C).

Regulatory Compliance: Substitute parts must maintain RoHS3 and REACH compliance status to satisfy procurement and environmental requirements.

The NTJD4152PT1G meets all substitution criteria and is classified as an equivalent substitute for the FDG6316P.

Parameter Comparison

Engineering Selection Recommendations

The NTJD4152PT1G is a direct substitute for the FDG6316P based on package compatibility, electrical parameter alignment, and regulatory compliance. Both devices are manufactured by onsemi, share identical package geometry (6-TSSOP/SC-88/SOT-363), and maintain the same operating temperature range.

The NTJD4152PT1G provides enhanced electrical performance relative to the FDG6316P: the 20V Vdss rating exceeds the 12V specification, the 880mA continuous drain current surpasses the 700mA rating, and the on-resistance is comparable at 260mOhm versus 270mOhm. These improvements ensure that the NTJD4152PT1G operates within or exceeds the performance envelope of the original part.

Both devices maintain RoHS3 compliance and REACH unaffected status, satisfying regulatory requirements for procurement and environmental standards. The NTJD4152PT1G carries an Active product status, ensuring long-term availability and supply chain stability compared to the Last Time Buy status of the FDG6316P.

Frequently Asked Questions (FAQ)

Q: Can the NTJD4152PT1G be used as a direct replacement for the FDG6316P without PCB modifications?

A: Yes. Both devices use the 6-TSSOP (SC-88/SOT-363) surface mount package with identical pin assignments and footprint geometry. No PCB layout changes are required for substitution.

Q: What is the significance of the higher Vdss rating (20V) on the NTJD4152PT1G compared to the FDG6316P (12V)?

A: The higher voltage rating provides additional design margin and allows operation in circuits with higher supply voltages. In applications designed for 12V operation, the NTJD4152PT1G operates safely within its rated specifications with no adverse effects.

Q: Are there any differences in gate drive requirements between the FDG6316P and NTJD4152PT1G?

A: Both devices feature logic level gate operation. The NTJD4152PT1G has a lower gate threshold voltage (1.2V versus 1.5V) and slightly lower gate charge (2.2nC versus 2.4nC), which may result in marginally faster switching response. Standard logic level gate drive circuits are compatible with both parts.

Q: How do the on-resistance specifications compare?

A: The FDG6316P specifies 270mOhm at 700mA and 4.5V gate voltage. The NTJD4152PT1G specifies 260mOhm at 880mA and 4.5V gate voltage. The NTJD4152PT1G exhibits lower on-resistance at a higher current level, indicating superior performance characteristics.

Q: What is the product status difference, and why does it matter?

A: The FDG6316P carries Last Time Buy status, indicating onsemi has discontinued production. The NTJD4152PT1G carries Active status, ensuring continued manufacturing and availability. For new designs or production runs, the NTJD4152PT1G provides long-term supply security.

Q: Are both devices compliant with current environmental and regulatory standards?

A: Yes. Both the FDG6316P and NTJD4152PT1G are RoHS3 compliant and REACH unaffected. Both maintain MSL 1 (Unlimited) moisture sensitivity classification, indicating no special storage or handling requirements.

Q: Can the NTJD4152PT1G be used in applications where the FDG6316P was originally specified?

A: Yes. The NTJD4152PT1G meets or exceeds all electrical specifications of the FDG6316P, maintains package and pin compatibility, and operates across the same temperature range. It is suitable for all applications originally designed with the FDG6316P.