FDG6313N Equivalent & Substitute Parts

Part Overview

The FDG6313N is a dual N-channel MOSFET array manufactured by onsemi, designed for surface mount applications in the SC-88 (SC-70-6) package. This component features a 25V drain-to-source voltage rating with 500mA continuous drain current capability and 300mW maximum power dissipation. The device incorporates logic level gate technology, enabling direct interface with standard logic circuits.

The FDG6313N is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

FDG6313N

onsemiIn Stock: 9543FDG6313N Datasheet

Current PartRFQ

FDG6303N

onsemiIn Stock: 125310FDG6303N Datasheet

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NTJD4401NT1G

onsemiIn Stock: 125249NTJD4401NT1G Datasheet

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PMGD175XNEX

Nexperia USA Inc.In Stock: 1000161PMGD175XNEX Datasheet

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SI1902DL-T1-E3

Vishay SiliconixIn Stock: 25494SI1902DL-T1-E3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDG6313N is determined by compatibility across the following critical parameters:

Primary Compatibility Criteria:

• Configuration: 2 N-Channel (Dual) MOSFET array
• Package / Case: 6-TSSOP, SC-88, SOT-363 surface mount package
• Mounting Type: Surface Mount
• Operating Temperature Range: -55°C ~ 150°C (TJ)
• Moisture Sensitivity Level: 1 (Unlimited)

Secondary Electrical Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 25V
• Current - Continuous Drain (Id) @ 25°C: Must equal or exceed 500mA
• Power - Max: Must equal or exceed 300mW
• Vgs(th) (Max) @ Id: Logic level gate compatibility (≤ 1.5V @ 250µA)
• Gate Charge (Qg) (Max) @ Vgs: Lower values indicate improved switching performance

Substitute parts are grouped based on whether they meet or exceed the primary criteria while maintaining functional equivalence in dual N-channel MOSFET array applications.

Parameter Comparison

Engineering Selection Recommendations

FDG6303N (onsemi)

The FDG6303N is the primary direct equivalent to the FDG6313N. Both parts share identical electrical specifications: 25V Vdss, 500mA continuous drain current, 450mOhm Rds On, and 300mW power dissipation. The FDG6303N is currently in active production status with ROHS3 compliance certification, providing superior supply chain availability compared to the obsolete FDG6313N. This part is suitable for direct replacement in all applications where the FDG6313N was originally specified.

NTJD4401NT1G (onsemi)

The NTJD4401NT1G is a substitute option with reduced voltage rating (20V Vdss versus 25V) but enhanced current capability (630mA versus 500mA). This part features improved on-resistance (375mOhm) and is actively produced with ROHS3 compliance. Selection of this part is appropriate for applications where the 25V voltage margin is not critical and where the higher current capacity provides design benefits. The 20V rating limits use in circuits requiring the full 25V specification.

PMGD175XNEX (Nexperia USA Inc.)

The PMGD175XNEX offers the highest performance specifications among available substitutes: 30V Vdss, 870mA continuous drain current, and significantly reduced on-resistance (252mOhm). This part is actively produced with ROHS3 compliance and provides enhanced thermal performance (260mW maximum power). Selection of this part is appropriate for applications where improved efficiency and higher voltage margin are beneficial. The higher input capacitance (81pF @ 15V) may affect switching speed in certain circuit topologies.

SI1902DL-T1-E3 (Vishay Siliconix)

The SI1902DL-T1-E3 is a substitute option with reduced voltage rating (20V Vdss) but enhanced current capability (660mA) and superior gate charge characteristics (1.2nC @ 4.5V). This part is actively produced with ROHS3 compliance and represents the TrenchFET® technology series. Selection of this part is appropriate for applications where switching speed and efficiency are prioritized and where the 20V voltage specification is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the FDG6303N directly replace the FDG6313N without circuit modification?

A: Yes. The FDG6303N is electrically and mechanically identical to the FDG6313N. Both parts feature 25V Vdss, 500mA continuous drain current, 450mOhm on-resistance, and identical package specifications. No circuit modifications are required for direct substitution.

Q: What is the primary difference between the FDG6313N and NTJD4401NT1G?

A: The primary difference is the drain-to-source voltage rating. The FDG6313N is rated for 25V, while the NTJD4401NT1G is rated for 20V. The NTJD4401NT1G provides higher continuous drain current (630mA versus 500mA) and lower on-resistance (375mOhm versus 450mOhm). Substitution is appropriate only in applications where 20V voltage margin is sufficient.

Q: Are all substitute parts compatible with the SC-88 package footprint?

A: Yes. All substitute parts listed are available in the 6-TSSOP, SC-88, SOT-363 package family. PCB footprints are compatible across all listed parts.

Q: Which substitute part offers the best thermal performance?

A: The PMGD175XNEX offers the lowest on-resistance (252mOhm @ 900mA, 4.5V) and reduced maximum power dissipation (260mW), resulting in improved thermal efficiency. This part generates less heat during operation compared to other substitutes.

Q: What is the significance of the logic level gate feature?

A: Logic level gate technology enables direct interface with standard logic circuits operating at 3.3V or 5V. All listed substitute parts maintain this feature, ensuring compatibility with existing gate drive circuits.

Q: Are all substitute parts RoHS3 compliant?

A: The FDG6303N, NTJD4401NT1G, PMGD175XNEX, and SI1902DL-T1-E3 are all ROHS3 compliant. The original FDG6313N does not specify RoHS status. All substitute parts meet current environmental compliance requirements.

Q: Can the PMGD175XNEX be used in applications requiring exactly 25V voltage rating?

A: Yes. The PMGD175XNEX is rated for 30V Vdss, which exceeds the 25V requirement. The higher voltage rating provides additional design margin and does not create compatibility issues in circuits designed for 25V operation.

Q: What is the impact of gate charge differences among substitute parts?

A: Gate charge (Qg) affects switching speed and gate drive power requirements. Lower gate charge values (SI1902DL-T1-E3 at 1.2nC, PMGD175XNEX at 1.65nC) result in faster switching transitions compared to higher values (NTJD4401NT1G at 3nC). Selection depends on circuit switching frequency requirements.

Q: Are all substitute parts available in cut tape and digi-reel packaging?

A: Yes. All substitute parts are available in Cut Tape (CT) and Digi-Reel® packaging formats, supporting both manual assembly and automated reel-fed production processes.

Q: What is the moisture sensitivity level for all listed parts?

A: All parts, including the original FDG6313N and all substitutes, are classified as MSL 1 (Unlimited). This classification indicates no moisture sensitivity restrictions and no special storage or handling requirements.