FDG6302P Equivalent & Substitute Parts

Part Overview

The FDG6302P is a dual P-channel MOSFET array manufactured by onsemi, housed in a 6-TSSOP (SC-88) surface mount package. This component features logic level gate operation with a maximum drain-source voltage rating of 25V and continuous drain current capability of 140mA at 25°C. The device is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain compatibility with the SC-88 package footprint and preserve critical electrical characteristics within acceptable operating parameters.

Substiute Parts

FDG6302P

onsemiIn Stock: 16013FDG6302P Datasheet

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FDG6304P

onsemiIn Stock: 35246FDG6304P Datasheet

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NTJD4152PT1G

onsemiIn Stock: 75814NTJD4152PT1G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the FDG6302P are selected based on the following criteria:

Package Compatibility: All substitute parts must use the 6-TSSOP (SC-88, SOT-363) surface mount package to ensure direct footprint compatibility on existing printed circuit boards.

Configuration: Substitute parts must maintain a dual P-channel MOSFET array configuration to preserve circuit functionality.

Logic Level Gate Operation: All candidates must feature logic level gate characteristics, enabling direct gate drive compatibility with standard logic voltage levels.

Operating Temperature Range: Substitute parts must support the full -55°C to 150°C junction temperature range.

Electrical Parameter Compatibility: Substitute parts must satisfy the application requirements for drain-source voltage, continuous drain current, and on-resistance. Parts with equal or superior electrical ratings are acceptable substitutes provided they do not introduce incompatibilities in the target circuit.

Compliance and Availability: Active product status and ROHS3 compliance are preferred for new designs and long-term supply assurance.

Parameter Comparison

Engineering Selection Recommendations

FDG6304P is the primary substitute for the FDG6302P. Both devices share identical drain-source voltage (25V), power dissipation (300mW), and operating temperature range specifications. The FDG6304P provides superior continuous drain current capability (410mA versus 140mA) and lower on-resistance (1.1Ω versus 10Ω), making it suitable for applications requiring the FDG6302P's electrical envelope. The FDG6304P is currently in active production status with ROHS3 compliance certification, ensuring long-term supply availability and regulatory compliance for new designs.

NTJD4152PT1G is an alternative substitute with enhanced current handling capability (880mA) and significantly reduced on-resistance (0.26Ω). This part operates at a reduced drain-source voltage rating of 20V, which limits its applicability to circuits where the 25V rating of the FDG6302P is not required. The NTJD4152PT1G is active in production with ROHS3 compliance. Selection of this part requires circuit-level verification that the 20V maximum voltage rating is compatible with the application's voltage environment.

Both substitute parts maintain the dual P-channel configuration, logic level gate operation, and SC-88 package compatibility required for direct substitution. Active product status and ROHS3 compliance support long-term design viability and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the FDG6304P directly replace the FDG6302P in existing designs?

A: Yes. The FDG6304P maintains identical package footprint (SC-88), drain-source voltage rating (25V), power dissipation (300mW), and operating temperature range (-55°C to 150°C). The FDG6304P's superior current and on-resistance specifications are backward compatible with applications designed for the FDG6302P.

Q: What is the primary difference between FDG6304P and NTJD4152PT1G?

A: The FDG6304P maintains the 25V drain-source voltage rating of the FDG6302P, while the NTJD4152PT1G operates at a maximum of 20V. The NTJD4152PT1G provides higher continuous drain current (880mA) and lower on-resistance (0.26Ω) compared to both the FDG6302P and FDG6304P. Selection depends on the circuit's voltage requirements.

Q: Are all substitute parts available in the same package?

A: Yes. The FDG6302P, FDG6304P, and NTJD4152PT1G all use the 6-TSSOP (SC-88, SOT-363) surface mount package, ensuring identical printed circuit board footprints and assembly compatibility.

Q: Why is the FDG6302P classified as obsolete?

A: The FDG6302P is no longer in active production. The FDG6304P and NTJD4152PT1G are active alternatives that provide equivalent or superior electrical performance within the same package envelope.

Q: Do the substitute parts meet current regulatory compliance standards?

A: Yes. Both FDG6304P and NTJD4152PT1G are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for new product designs.

Q: What gate charge differences exist between these parts?

A: The FDG6302P has a gate charge of 0.31nC at 4.5V, the FDG6304P has 1.5nC at 4.5V, and the NTJD4152PT1G has 2.2nC at 4.5V. Higher gate charge requires increased gate drive energy but does not affect logic level gate compatibility.

Q: Can NTJD4152PT1G be used in applications requiring 25V operation?

A: No. The NTJD4152PT1G has a maximum drain-source voltage rating of 20V. Use of this part in circuits with voltages exceeding 20V violates the device's absolute maximum ratings. The FDG6304P is the appropriate substitute for 25V applications.