FDG326P P-Channel MOSFET 20V 1.5A Equivalent & Substitute Parts

Part Overview

The FDG326P is a P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 1.5A continuous drain current at 25°C. The device is housed in a 6-TSSOP (SC-88/SC-70-6/SOT-363) surface mount package and is part of the PowerTrench® series. The FDG326P is currently classified as obsolete, making identification of equivalent and substitute components essential for ongoing design support and production continuity. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Substiute Parts

FDG326P

onsemiIn Stock: 56475FDG326P Datasheet

Current PartRFQ

NTJS4151PT1G

onsemiIn Stock: 143433NTJS4151PT1G Datasheet

DirectRFQ

FDG328P

onsemiIn Stock: 16139FDG328P Datasheet

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AO7411

Alpha & Omega Semiconductor Inc.In Stock: 30335AO7411 Datasheet

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PMG85XP,115

NXP USA Inc.In Stock: 13008PMG85XP,115 Datasheet

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PMG85XPH

Nexperia USA Inc.In Stock: 3381PMG85XPH Datasheet

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SI1403BDL-T1-GE3

Vishay SiliconixIn Stock: 38482SI1403BDL-T1-GE3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDG326P is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

• FET Type: P-Channel (required)
• Drain to Source Voltage (Vdss): 20V (required)
• Package / Case: 6-TSSOP, SC-88, SOT-363 (required for mechanical compatibility)
• Operating Temperature Range: -55°C to 150°C (TJ) (required)
• Mounting Type: Surface Mount (required)

Functional Compatibility Parameters:

• Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 1.5A
• Rds On (Max) @ Id, Vgs: Equal to or less than 140mOhm (lower is acceptable)
• Vgs(th) (Max) @ Id: Equal to or less than 1.5V (lower is acceptable)
• Gate Charge (Qg) (Max) @ Vgs: Equal to or less than 7nC (lower is acceptable)
• Power Dissipation (Max): Equal to or greater than 750mW (Ta)

Substitute parts are grouped into two categories: Direct Substitutes (identical electrical and thermal specifications) and Similar Substitutes (enhanced or equivalent performance within the same package family).

Parameter Comparison

Engineering Selection Recommendations

Direct Substitute (Recommended Primary Choice):

NTJS4151PT1G is the direct substitute for FDG326P. Both devices are manufactured by onsemi and share identical voltage ratings (20V Vdss), operating temperature range (-55°C to 150°C), and package configuration (6-TSSOP/SC-88/SOT-363). NTJS4151PT1G exceeds the FDG326P in continuous drain current (3.3A versus 1.5A) and power dissipation (1W versus 750mW), providing enhanced performance margin. The NTJS4151PT1G is classified as Active with ROHS3 compliance and REACH Unaffected status, ensuring long-term availability and regulatory compliance. Gate charge is slightly elevated (10nC versus 7nC), and Vgs maximum is increased to ±12V, both acceptable variations for most applications.

Alternative Substitutes (Secondary Choices):

FDG328P is an active onsemi product with identical current rating (1.5A) and power dissipation (750mW) to the FDG326P. Rds On is marginally higher (145mOhm versus 140mOhm), and gate charge is lower (6nC versus 7nC). Vgs maximum is increased to ±12V. This device provides near-identical performance with improved regulatory status (ROHS3 Compliant, Active).

SI1403BDL-T1-GE3 (Vishay Siliconix TrenchFET®) matches the FDG326P in current rating (1.5A) and operating temperature. Rds On is marginally higher (150mOhm versus 140mOhm), but gate charge is significantly lower (4.5nC versus 7nC), reducing switching losses. Power dissipation is slightly lower (625mW versus 750mW). This device is Active and ROHS3 Compliant.

AO7411 (Alpha & Omega Semiconductor) provides enhanced current capability (1.8A versus 1.5A) with lower Rds On (120mOhm versus 140mOhm) and reduced power dissipation (630mW versus 750mW). Gate charge is comparable (6.24nC versus 7nC). Package is SC-70-6, compatible with the FDG326P footprint. This device is Active and ROHS3 Compliant.

PMG85XP,115 and PMG85XPH (NXP/Nexperia) provide enhanced current capability (2A versus 1.5A) with lower Rds On (115mOhm versus 140mOhm). Power dissipation at Ta is lower (375mW versus 750mW), though Tc rating is significantly higher (2.4W). Gate charge is comparable (7.2nC versus 7nC). Both devices are Active and ROHS3 Compliant. PMG85XPH includes Tape & Reel packaging.

All substitute parts maintain the required P-Channel configuration, 20V Vdss rating, -55°C to 150°C operating temperature, and 6-TSSOP/SC-88/SOT-363 package compatibility. Selection among alternatives depends on specific application requirements for current capacity, on-resistance, and thermal management.

Frequently Asked Questions (FAQ)

Q: Can NTJS4151PT1G directly replace FDG326P in existing designs?

A: Yes. NTJS4151PT1G is the direct substitute for FDG326P. Both devices share identical voltage ratings (20V Vdss), operating temperature range (-55°C to 150°C), and package configuration (6-TSSOP/SC-88/SOT-363). NTJS4151PT1G provides enhanced current capacity (3.3A versus 1.5A) and power dissipation (1W versus 750mW), making it suitable for direct PCB replacement without layout modifications.

Q: What is the primary reason for substituting FDG326P?

A: FDG326P is classified as obsolete. NTJS4151PT1G, FDG328P, and other listed alternatives are active products with confirmed long-term availability and regulatory compliance (ROHS3, REACH Unaffected). Substitution ensures design continuity and production support.

Q: Are all substitute parts compatible with the same PCB footprint?

A: Yes. All substitute parts listed use the 6-TSSOP (SC-88/SC-70-6/SOT-363) package family, which shares identical pin configuration and footprint. Direct PCB placement is possible without layout redesign.

Q: How do I select between multiple substitute options?

A: Selection depends on application-specific requirements. If current capacity is not a limiting factor, FDG328P or SI1403BDL-T1-GE3 provide near-identical performance to FDG326P. If lower on-resistance or higher current capacity is beneficial, NTJS4151PT1G, AO7411, or PMG85XP,115/PMG85XPH are preferred. All alternatives meet the FDG326P electrical and thermal specifications.

Q: What is the significance of Rds On (on-resistance) in MOSFET substitution?

A: Rds On determines conduction losses and heat generation. Lower Rds On reduces power dissipation and improves efficiency. FDG326P specifies 140mOhm maximum. Substitutes with equal or lower Rds On (NTJS4151PT1G at 60mOhm, AO7411 at 120mOhm, PMG85XP,115 at 115mOhm) provide improved performance. Higher Rds On (SI1403BDL-T1-GE3 at 150mOhm, FDG328P at 145mOhm) remains acceptable within design margins.

Q: Does gate charge affect circuit performance?

A: Gate charge (Qg) influences switching speed and driver requirements. FDG326P specifies 7nC maximum. Substitutes with lower gate charge (FDG328P at 6nC, AO7411 at 6.24nC, SI1403BDL-T1-GE3 at 4.5nC) reduce switching losses and allow faster switching. Slightly higher gate charge (NTJS4151PT1G at 10nC, PMG85XP,115 at 7.2nC) remains compatible with standard gate drivers.

Q: What is the importance of Vgs(th) (threshold voltage) in substitution?

A: Vgs(th) determines the gate voltage required to turn the MOSFET on. FDG326P specifies 1.5V maximum. All substitutes have equal or lower Vgs(th), ensuring reliable gate drive compatibility. Lower threshold voltage (AO7411 at 1V, NTJS4151PT1G at 1.2V) provides improved noise margin and faster switching response.

Q: Are there thermal management differences between substitutes?

A: Power dissipation ratings vary. FDG326P specifies 750mW (Ta). NTJS4151PT1G provides 1W (Ta), offering higher thermal capacity. PMG85XP,115 and PMG85XPH specify 375mW (Ta) but 2.4W (Tc), indicating superior thermal performance with proper case temperature management. AO7411 and SI1403BDL-T1-GE3 specify lower Ta ratings (630mW and 625mW respectively) but remain suitable for FDG326P replacement in equivalent thermal environments.

Q: What compliance certifications should I verify for production use?

A: All active substitute parts are ROHS3 Compliant and REACH Unaffected. These certifications ensure regulatory compliance for commercial and industrial applications. FDG326P compliance status is not specified due to obsolete classification. Verify specific certifications with component suppliers for your target market and application.

Q: Can I use PMG85XPH in tape-and-reel packaging for automated assembly?

A: Yes. PMG85XPH is supplied in Tape & Reel (TR) packaging, suitable for automated pick-and-place assembly. NTJS4151PT1G is also available in Tape & Reel packaging. Verify packaging availability with your component supplier for production volume requirements.