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FDG313N N-Channel MOSFET 25V 950mA Equivalent & Substitute Parts
Part Overview
The FDG313N is an N-Channel MOSFET manufactured by onsemi, rated for 25V drain-to-source voltage with 950mA continuous drain current at 25°C. The device is housed in a 6-TSSOP SC-88 (SC-70-6) surface mount package and dissipates a maximum of 750mW. The FDG313N is classified as obsolete, making identification of functionally equivalent active alternatives necessary for new designs and ongoing production requirements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 25 | V |
| Continuous Drain Current (Id) @ 25°C | 950 | mA |
| On-Resistance (Rds On Max) @ Id, Vgs | 450 | mOhm @ 500mA, 4.5V |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 1.5 | V @ 250µA |
| Gate Charge (Qg Max) @ Vgs | 2.3 | nC @ 4.5V |
| Maximum Gate Voltage (Vgs Max) | ±8 | V |
| Input Capacitance (Ciss Max) @ Vds | 50 | pF @ 10V |
| Power Dissipation (Max) | 750 | mW (Ta) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the FDG313N is determined by electrical and mechanical compatibility across the following critical parameters:
Electrical Compatibility Criteria:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 25V
- FET Type: Must be N-Channel
- Technology: Must be MOSFET (Metal Oxide)
- Gate Threshold Voltage (Vgs(th)): Must be compatible at specified gate drive levels
- Maximum Gate Voltage (Vgs Max): Must accommodate ±8V operation
- Operating Temperature Range: Must span -55°C to 150°C (TJ)
Mechanical Compatibility Criteria:
- Mounting Type: Must be Surface Mount
- Package Family: Must be compatible with SC-88, SC-70, or SOT-363 footprints
- Moisture Sensitivity Level: Must be MSL 1 or equivalent
Current and Power Considerations: Substitute parts must support the application's drain current and power dissipation requirements. The FDG313N operates at 950mA continuous drain current; substitutes with equal or higher current ratings are acceptable. Power dissipation must be evaluated based on specific application thermal conditions.
The two substitute parts listed (NTJS4405NT1G and NTS4409NT1G) meet these criteria with variations in current rating, on-resistance, and package configuration.
Parameter Comparison
| Parameter | FDG313N | NTJS4405NT1G | NTS4409NT1G | Unit |
|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | onsemi | — |
| Product Status | Obsolete | Active | Active | — |
| FET Type | N-Channel | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 25 | 25 | 25 | V |
| Continuous Drain Current (Id) @ 25°C | 950 | 1000 | 700 | mA |
| On-Resistance (Rds On Max) @ Id, Vgs | 450 @ 500mA, 4.5V | 350 @ 600mA, 4.5V | 350 @ 600mA, 4.5V | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 1.5 @ 250µA | 1.5 @ 250µA | 1.5 @ 250µA | V |
| Gate Charge (Qg Max) @ Vgs | 2.3 @ 4.5V | 1.5 @ 4.5V | 1.5 @ 4.5V | nC |
| Maximum Gate Voltage (Vgs Max) | ±8 | ±8 | ±8 | V |
| Input Capacitance (Ciss Max) @ Vds | 50 @ 10V | 60 @ 10V | 60 @ 10V | pF |
| Power Dissipation (Max) | 750 (Ta) | 630 (Ta) | 280 (Tj) | mW |
| Operating Temperature Range | -55 to 150 | -55 to 150 | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | — |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | SC-70, SOT-323 | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | — |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | — |
| ECCN | EAR99 | EAR99 | EAR99 | — |
Engineering Selection Recommendations
NTJS4405NT1G is the primary substitute for the FDG313N. Both devices share identical package footprints (6-TSSOP, SC-88, SOT-363), voltage ratings (25V Vdss), and gate drive specifications (±8V Vgs Max, 1.5V Vgs(th)). The NTJS4405NT1G provides superior electrical performance with 1A continuous drain current (compared to 950mA), lower on-resistance (350mOhm vs. 450mOhm), and reduced gate charge (1.5nC vs. 2.3nC). The NTJS4405NT1G is classified as Active and RoHS3 Compliant, ensuring long-term availability and regulatory compliance. This part is suitable for direct replacement in applications where the FDG313N footprint and pinout are maintained.
NTS4409NT1G is an alternative substitute with the same voltage and temperature specifications but operates in a different package family (SC-70-3, SOT-323). The NTS4409NT1G is rated for 700mA continuous drain current, which is lower than the FDG313N's 950mA rating. This part is suitable only for applications where the drain current requirement does not exceed 700mA and where the SC-70-3 package footprint is acceptable. The NTS4409NT1G is also Active and RoHS3 Compliant.
Both substitute parts are manufactured by onsemi, carry REACH Unaffected and EAR99 classifications, and maintain MSL 1 moisture sensitivity levels identical to the FDG313N.
Frequently Asked Questions (FAQ)
Q: Can the NTJS4405NT1G directly replace the FDG313N on existing PCBs?
A: Yes. The NTJS4405NT1G uses the same 6-TSSOP SC-88 (SC-70-6) package and SOT-363 footprint as the FDG313N. Pin-to-pin compatibility is maintained, allowing direct PCB substitution without layout modifications.
Q: What is the primary advantage of using NTJS4405NT1G over the FDG313N?
A: The NTJS4405NT1G is an active product with confirmed long-term availability, whereas the FDG313N is obsolete. Additionally, the NTJS4405NT1G offers improved electrical characteristics: higher continuous drain current (1A vs. 950mA), lower on-resistance (350mOhm vs. 450mOhm), and lower gate charge (1.5nC vs. 2.3nC). The NTJS4405NT1G is RoHS3 Compliant.
Q: When should NTS4409NT1G be selected instead of NTJS4405NT1G?
A: The NTS4409NT1G should be selected only when the application's drain current requirement does not exceed 700mA and when the SC-70-3 (SOT-323) package footprint is compatible with the PCB design. The NTS4409NT1G is not a direct footprint replacement for the FDG313N due to its different package family.
Q: Are there any gate drive or threshold voltage differences between these parts?
A: No. All three parts (FDG313N, NTJS4405NT1G, and NTS4409NT1G) share identical gate threshold voltage specifications (1.5V @ 250µA) and maximum gate voltage ratings (±8V). Gate drive circuits designed for the FDG313N are directly compatible with both substitute parts.
Q: What is the impact of the lower gate charge in the substitute parts?
A: The lower gate charge (1.5nC vs. 2.3nC) in both substitute parts results in faster switching times and reduced gate drive power consumption. This is a beneficial characteristic that improves overall circuit efficiency without requiring any design modifications.
Q: Do the substitute parts meet the same regulatory and compliance standards as the FDG313N?
A: Yes. Both NTJS4405NT1G and NTS4409NT1G carry identical REACH Unaffected and EAR99 classifications. The NTJS4405NT1G and NTS4409NT1G are RoHS3 Compliant, providing enhanced regulatory compliance compared to the obsolete FDG313N.
Q: Can the NTJS4405NT1G handle higher power dissipation than the FDG313N?
A: The NTJS4405NT1G is rated for 630mW maximum power dissipation (Ta), compared to the FDG313N's 750mW. However, the lower on-resistance of the NTJS4405NT1G (350mOhm vs. 450mOhm) typically results in lower actual power dissipation in practical applications operating at similar current levels.
Q: What is the moisture sensitivity level for all three parts?
A: All three parts carry MSL 1 (Unlimited) moisture sensitivity levels, indicating no moisture-related handling restrictions during storage, transport, or assembly.
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