FDFS2P753AZ P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDFS2P753AZ is a P-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 3A continuous drain current. This device features the PowerTrench® series technology and is housed in an 8-SOIC surface mount package. The part is currently classified as obsolete, necessitating identification of active equivalent alternatives that maintain electrical and mechanical compatibility for ongoing production and repair applications.

Substiute Parts

FDFS2P753AZ

onsemiIn Stock: 1172FDFS2P753AZ Datasheet

Current PartRFQ

FDC658AP

onsemiIn Stock: 41323FDC658AP Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDFS2P753AZ is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

• FET Type: P-Channel topology
• Drain-to-Source Voltage (Vdss): 30V minimum rating
• Continuous Drain Current (Id): Equal to or greater than 3A
• Gate Threshold Voltage (Vgs(th)): Maximum 3V @ 250µA
• Maximum Gate Voltage (Vgs): ±25V or greater
• Operating Temperature Range: -55°C to 150°C or wider
• Mounting Type: Surface Mount
• Moisture Sensitivity Level: MSL 1 or equivalent

Package Compatibility Consideration: The FDFS2P753AZ uses an 8-SOIC package. Substitute parts may employ different surface mount packages (such as SuperSOT-6) provided the electrical parameters remain within specification and the physical footprint is compatible with the application circuit layout.

The FDC658AP meets all primary electrical substitution criteria and is classified as an active product, making it a direct functional equivalent despite package differences.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: FDC658AP

The FDC658AP is the recommended substitute for the obsolete FDFS2P753AZ based on the following engineering factors:

1. Electrical Compatibility: Both devices share identical Vdss (30V), Vgs(th) (3V @ 250µA), and Vgs (±25V) specifications. The FDC658AP provides higher continuous drain current (4A versus 3A), ensuring superior current handling capability within the same voltage class.

2. Thermal Performance: The FDC658AP exhibits lower on-resistance (50 mOhm @ 4A, 10V versus 115 mOhm @ 3A, 10V), resulting in reduced power dissipation and improved thermal efficiency in switching applications.

3. Product Status: The FDC658AP is classified as active, ensuring long-term availability and supply chain continuity compared to the obsolete FDFS2P753AZ.

4. Regulatory Compliance: Both devices maintain identical REACH status (REACH Unaffected) and ECCN classification (EAR99), with equivalent moisture sensitivity levels (MSL 1).

5. Package Consideration: The FDC658AP uses a SuperSOT-6 package instead of the 8-SOIC package. Circuit board layout modifications are required to accommodate the different footprint. Electrical performance is not affected by this package change.

6. Series Continuity: Both devices belong to the onsemi PowerTrench® series, maintaining design philosophy and performance characteristics.

Frequently Asked Questions (FAQ)

Q: Can the FDC658AP directly replace the FDFS2P753AZ without circuit modifications?

A: The FDC658AP is electrically compatible with the FDFS2P753AZ for all switching and biasing functions. However, the package change from 8-SOIC to SuperSOT-6 requires printed circuit board layout modifications. Pin-to-pin electrical functionality remains identical.

Q: What is the significance of the lower on-resistance in the FDC658AP?

A: The FDC658AP exhibits 50 mOhm on-resistance compared to 115 mOhm in the FDFS2P753AZ. This lower resistance reduces conduction losses, decreases heat generation, and improves overall circuit efficiency. This represents an improvement over the original part.

Q: Are there any thermal advantages to using the FDC658AP?

A: Yes. The FDC658AP's lower on-resistance and higher current rating (4A versus 3A) result in reduced power dissipation under identical operating conditions. The device can handle higher current loads while maintaining lower junction temperatures.

Q: Why is the FDFS2P753AZ classified as obsolete?

A: Obsolescence indicates that the manufacturer has discontinued production and support for this part number. The FDC658AP represents the active equivalent within the onsemi product portfolio.

Q: Are the gate charge specifications comparable between these devices?

A: The FDFS2P753AZ specifies 11 nC gate charge @ 10V, while the FDC658AP specifies 8.1 nC @ 5V. The FDC658AP exhibits lower gate charge, resulting in faster switching transitions and reduced gate drive power requirements.

Q: What is the impact of the package change on thermal management?

A: The SuperSOT-6 package used in the FDC658AP provides adequate thermal performance for the specified power dissipation levels. Package selection does not compromise thermal management when used within rated specifications.

Q: Are both devices suitable for the same voltage and current applications?

A: Yes. Both devices are rated for 30V Vdss and operate across the identical temperature range (-55°C to 150°C). The FDC658AP's higher current rating (4A) makes it suitable for applications requiring up to 4A continuous drain current, exceeding the FDFS2P753AZ's 3A specification.

Q: What compliance certifications apply to the FDC658AP?

A: The FDC658AP maintains REACH Unaffected status and EAR99 ECCN classification, identical to the FDFS2P753AZ. The device carries MSL 1 (Unlimited) moisture sensitivity rating, requiring no special handling during storage or assembly.