FDFS2P106A P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The FDFS2P106A is a P-Channel 60V 3A surface mount MOSFET manufactured by onsemi, packaged in 8-SOIC format. This device features PowerTrench® technology with an integrated Schottky diode and is rated for 900mW power dissipation. The FDFS2P106A is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

FDFS2P106A

onsemiIn Stock: 1918FDFS2P106A Datasheet

Current PartRFQ

FDC5614P

onsemiIn Stock: 25038FDC5614P Datasheet

MFR RecommendedRFQ

PJL9433A_R2_00001

Panjit International Inc.In Stock: 8571PJL9433A_R2_00001 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the FDFS2P106A is determined by electrical parameter compatibility within the P-Channel MOSFET category. The critical parameters for substitution are:

Electrical Compatibility Requirements:

• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 60V minimum
• Continuous Drain Current (Id): 3A or greater
• Gate Threshold Voltage (Vgs(th)): 3V or lower
• Maximum Gate Voltage (Vgs): ±20V
• Operating Temperature Range: -55°C to 150°C minimum

Mechanical Compatibility Requirements:

• Surface Mount technology
• Package footprint compatibility with 8-SOIC or equivalent pinout

The substitute parts listed below meet or exceed these electrical specifications and maintain surface mount compatibility. Differences in package form factor, power dissipation rating, and gate charge characteristics are noted in the parameter comparison table.

Parameter Comparison

Engineering Selection Recommendations

FDC5614P (onsemi) - Manufacturer Recommended Substitute

The FDC5614P is the manufacturer-recommended substitute for the obsolete FDFS2P106A. Both devices are onsemi PowerTrench® technology products with identical electrical specifications for Vdss, Id, Rds On, and Vgs(th). The FDC5614P maintains active product status and full ROHS3 compliance. The primary difference is the package format: FDC5614P uses SuperSOT™-6 (SOT-23-6) instead of 8-SOIC. This package change requires PCB layout modification. The FDC5614P offers improved power dissipation capability (1.6W versus 0.9W), providing additional thermal margin in applications.

PJL9433A_R2_00001 (Panjit International Inc.) - Functional Equivalent

The PJL9433A_R2_00001 is a functional equivalent from Panjit International Inc. with active product status. This device meets all critical electrical parameters: 60V Vdss, 3.2A continuous drain current (exceeding the 3A requirement), and compatible gate threshold voltage of 2.5V. The Rds On specification of 110 mOhm at 3.2A matches the FDFS2P106A performance. The PJL9433A_R2_00001 provides superior power dissipation (2.5W) and lower gate charge (10 nC), which may reduce switching losses in certain applications. The package is specified as 8-SOP with 8-SOIC footprint compatibility, allowing direct PCB substitution without layout changes. Full ROHS3 and MSL 1 compliance is maintained.

Both substitute parts satisfy the electrical requirements for direct functional replacement of the obsolete FDFS2P106A. Selection between them depends on package form factor constraints and thermal design requirements.

Frequently Asked Questions (FAQ)

Q: Can the FDC5614P be used as a direct PCB replacement for the FDFS2P106A?

A: The FDC5614P is electrically equivalent but uses a different package format (SuperSOT™-6 versus 8-SOIC). PCB layout modification is required. The pinout and footprint are not compatible without redesign.

Q: What are the key electrical differences between the FDFS2P106A and PJL9433A_R2_00001?

A: Both devices share identical Vdss (60V) and Rds On (110 mOhm) specifications. The PJL9433A_R2_00001 offers higher continuous drain current (3.2A versus 3A), lower gate threshold voltage (2.5V versus 3V), significantly lower gate charge (10 nC versus 21 nC), and higher power dissipation rating (2.5W versus 0.9W). These differences favor the Panjit device in high-frequency switching applications.

Q: Is the PJL9433A_R2_00001 a direct PCB replacement for the FDFS2P106A?

A: Yes. The PJL9433A_R2_00001 is specified with 8-SOIC footprint compatibility and maintains the same package width (0.154", 3.90mm). Direct PCB substitution is possible without layout modification.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. Both the FDC5614P and PJL9433A_R2_00001 are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the compliance profile of the FDFS2P106A.

Q: Why does the PJL9433A_R2_00001 have lower gate charge than the FDFS2P106A?

A: Gate charge is a device-specific characteristic determined by the internal capacitance and switching characteristics of the MOSFET structure. The lower gate charge (10 nC versus 21 nC) in the Panjit device results from different internal design and may reduce gate drive power requirements in switching applications.

Q: What is the impact of higher power dissipation rating in substitute parts?

A: The FDC5614P (1.6W) and PJL9433A_R2_00001 (2.5W) have higher power dissipation ratings than the FDFS2P106A (0.9W). This provides additional thermal margin and allows operation at higher ambient temperatures or with reduced heatsinking requirements. The higher rating does not change the device's electrical performance in the application.

Q: Can both substitute parts handle the same current and voltage as the FDFS2P106A?

A: Yes. Both substitute parts meet or exceed the FDFS2P106A specifications: 60V Vdss and 3A continuous drain current. The PJL9433A_R2_00001 exceeds the current rating at 3.2A. All three devices operate across the same temperature range (-55°C to 150°C).